Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory

Abstract Data retention characteristic is one of the most critical issues in low power DRAMs because it determines idle currents of self-refresh operation. Compared to normal healthy cells, a few ppm orders of cells in a tail distribution have much higher leakage currents. The origin of the leaky cells (so called weak cells or tail cells) has been quite arguable for the past decades [1, 2], but it should be scrutinized in order to achieve long data retention time. In this paper, we have thoroughly investigated the behavior of the retention weak cells using a newly generated combination program and TEM analysis so as to discover and explain their origins

Download Full-text

The Effect of Passivation SiON Layer on the Data Retention Reliability of NAND Flash

MRS Proceedings ◽

10.1557/proc-1195-b07-03 ◽

2009 ◽

Vol 1195 ◽

Author(s):

Younggeun Jang ◽

Kwangwook Lee ◽

Eunsoo Kim ◽

Jonghye Cho ◽

Jungmyoung Shim ◽

...

Keyword(s):

Flash Memory ◽

Silicon Oxynitride ◽

Nand Flash ◽

Retention Behavior ◽

Nand Flash Memory ◽

Data Retention ◽

Retention Characteristic ◽

Final Data ◽

Two Parameters ◽

Mobile Ions

AbstractData retention is one of the major device reliabilities of NAND Flash memory. We found that the lower Refractive Index (RI) of the Passivation Silicon Oxynitride (SiON) layer deposited by PECVD, the better data retention behavior was achieved. The hydrogen content and the stress analysis of the films are analyzed to find out which is more important in this case. Generally, when the RI of SiON decreases, both parameters also decrease, so it is impossible to find out which parameter is major factor of data retention. To analyze the effects of two parameters separately, we applied two conditions which had the same H contents but quite different stress values. The final data retention levels are same in both conditions. In addition, even if the layer has the same H content, the retention characteristic is changed by how hydrogen is bonded in the film. In conclusion, the data retention characteristic can be explained by mobile ions generated by the hydrogen weakly bonded in PECVD SiON films in our experiment.

Download Full-text

Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices

Electronics ◽

10.3390/electronics10030272 ◽

2021 ◽

Vol 10 (3) ◽

pp. 272

Author(s):

Guodu Han ◽

Yanning Chen ◽

Hongxia Liu ◽

Dong Wang ◽

Rundi Qiao

Keyword(s):

Random Access ◽

Resistive Random Access Memory ◽

Light Transmittance ◽

Electrical Characteristics ◽

Data Retention ◽

Access Memory ◽

Reset Voltage ◽

Retention Characteristic ◽

Visible Light Range ◽

Application Potential

Fully transparent ITO/LaAlO3/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al2O3/ITO structure devices were set for comparison. The electrical characteristics of the devices were analyzed by Agilent B1500A semiconductor analyzer. Compared with the ITO/Al2O3/ITO RRAM devices, the current stability, SET/RESET voltage distribution, and retention characteristic of the ITO/LaAlO3/ITO RRAM devices have been greatly improved. In the visible light range, the light transmittance of the device is about 80%, that of the LaAlO3 layer is about 95%, the on-off ratio of the device is greater than 40, and the data retention time is longer than 10,000 s. The devices have great optical and electrical properties and have huge application potential as fully transparent RRAM devices.

Download Full-text