scholarly journals Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 272
Author(s):  
Guodu Han ◽  
Yanning Chen ◽  
Hongxia Liu ◽  
Dong Wang ◽  
Rundi Qiao
Keyword(s):  
Random Access ◽  
Resistive Random Access Memory ◽  
Light Transmittance ◽  
Electrical Characteristics ◽  
Data Retention ◽  
Access Memory ◽  
Reset Voltage ◽  
Retention Characteristic ◽  
Visible Light Range ◽  
Application Potential

Fully transparent ITO/LaAlO3/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al2O3/ITO structure devices were set for comparison. The electrical characteristics of the devices were analyzed by Agilent B1500A semiconductor analyzer. Compared with the ITO/Al2O3/ITO RRAM devices, the current stability, SET/RESET voltage distribution, and retention characteristic of the ITO/LaAlO3/ITO RRAM devices have been greatly improved. In the visible light range, the light transmittance of the device is about 80%, that of the LaAlO3 layer is about 95%, the on-off ratio of the device is greater than 40, and the data retention time is longer than 10,000 s. The devices have great optical and electrical properties and have huge application potential as fully transparent RRAM devices.

Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer

2020 ◽  
Vol 20 (7) ◽  
pp. 4244-4247 ◽  
Author(s):  
Chien-Hung Wu ◽  
Song-Nian Kuo ◽  
Kow-Ming Chang ◽  
Yi-Ming Chen ◽  
Yu-Xin Zhang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Random Access ◽  
Atmospheric Pressure Plasma ◽  
Chemical Vapor ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Electrical Characteristics ◽  
Access Memory ◽  
Microwave Annealing ◽  
Operation Speed

Non-volatile memory (NVM) is essential in almost every consumer electronic products. The most prevalent NVM used nowadays is flash memory (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Res. Letters, 9(1), p.526). However, some bottlenecks of flash memory have been identified, such as high operation voltage, low operation speed, and poor retention time. Resistive random access memory (RRAM) is considered to be the most promising one to become the next generation NVM device since its simple structure, fast program/erase speed, and low power consumption. In this experiment, the RRAM device is fabricated, and its IGZO (memory) layer is deposited with AP-PECVD technique which can reduce cost of the process. Microwave annealing (MWA) is used to enhance electrical characteristics of the RRAM device (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga– Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). Experiment results show that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics under bipolar operation, all forming/set/reset voltage for RRAM device is simultaneously lowered.

scholarly journals Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 457 ◽  
Author(s):  
Lei Wu ◽  
Hongxia Liu ◽  
Jinfu Lin ◽  
Shulong Wang
Keyword(s):  
Thermal Annealing ◽  
High Performance ◽  
Electrical Characteristic ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Before And After ◽  
Retention Characteristics

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 105 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.

The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

2014 ◽  
Vol 1691 ◽  
Author(s):  
Ryosuke Ogata ◽  
Masataka Yoshihara ◽  
Naohiro Murayama ◽  
Satoru Kishida ◽  
Kentaro Kinoshita
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Influence Of Water ◽  
Retention Characteristics ◽  
Memory Characteristics

ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H+ and OH-.

scholarly journals Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 504
Author(s):  
Wei-Lun Huang ◽  
Yong-Zhe Lin ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
Resistive Switching ◽  
Rf Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Reset Voltage ◽  
Resistance State ◽  
Conductive Mechanism

In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bipolar resistive switching features with an average set voltage of 1.73 V, average reset voltage of −0.60 V, average high resistance state (HRS) of 54,954.09 Ω, and the average low resistance state (LRS) of 64.97 Ω, respectively. Ti and Al were substituted for Pt as TE, and the conductive mechanism was different from TE of Pt. When Ti and Al were deposited onto the switching layer, both TE of Ti and Al will form oxidation of TiOx and AlOx because of their high activity to oxygen. The oxidation will have different effects on the forming of filaments, which may further affect the RRAM performance. The details of different mechanisms caused by different TE will be discussed. In brief, IGO is an excellent candidate for the RRAM device and with the aids of TiOx, the set voltage, and reset voltage, HRS and LRS become much more stable.

scholarly journals Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 864 ◽  
Author(s):  
Eduardo Pérez ◽  
Óscar González Ossorio ◽  
Salvador Dueñas ◽  
Helena Castán ◽  
Héctor García ◽  
...  
Keyword(s):  
Pulse Width ◽  
Random Access ◽  
Endurance Performance ◽  
Resistive Random Access Memory ◽  
Low Energy ◽  
Data Retention ◽  
Endurance Test ◽  
Access Memory ◽  
Incremental Step ◽  
Switching Stability

A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with verify algorithm (ISPVA) was implemented by using different pulse widths between 10 μ s and 50 ns and assessed on Al-doped HfO 2 4 kbit RRAM memory arrays. The switching stability was assessed by means of an endurance test of 1k cycles. Both conductive levels and voltages needed for switching showed a remarkable good behavior along 1k reset/set cycles regardless the programming pulse width implemented. Nevertheless, the distributions of voltages as well as the amount of energy required to carry out the switching operations were definitely affected by the value of the pulse width. In addition, the data retention was evaluated after the endurance analysis by annealing the RRAM devices at 150 °C along 100 h. Just an almost negligible increase on the rate of degradation of about 1 μ A at the end of the 100 h of annealing was reported between those samples programmed by employing a pulse width of 10 μ s and those employing 50 ns. Finally, an endurance performance of 200k cycles without any degradation was achieved on 128 RRAM devices by using programming pulses of 100 ns width.

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