Anaylysis of Mechanism About Data Retention Characteristic in Tanos Structure

Abstract Data retention characteristic is one of the most critical issues in low power DRAMs because it determines idle currents of self-refresh operation. Compared to normal healthy cells, a few ppm orders of cells in a tail distribution have much higher leakage currents. The origin of the leaky cells (so called weak cells or tail cells) has been quite arguable for the past decades [1, 2], but it should be scrutinized in order to achieve long data retention time. In this paper, we have thoroughly investigated the behavior of the retention weak cells using a newly generated combination program and TEM analysis so as to discover and explain their origins

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The Effect of Passivation SiON Layer on the Data Retention Reliability of NAND Flash

MRS Proceedings ◽

10.1557/proc-1195-b07-03 ◽

2009 ◽

Vol 1195 ◽

Author(s):

Younggeun Jang ◽

Kwangwook Lee ◽

Eunsoo Kim ◽

Jonghye Cho ◽

Jungmyoung Shim ◽

...

Keyword(s):

Flash Memory ◽

Silicon Oxynitride ◽

Nand Flash ◽

Retention Behavior ◽

Nand Flash Memory ◽

Data Retention ◽

Retention Characteristic ◽

Final Data ◽

Two Parameters ◽

Mobile Ions

AbstractData retention is one of the major device reliabilities of NAND Flash memory. We found that the lower Refractive Index (RI) of the Passivation Silicon Oxynitride (SiON) layer deposited by PECVD, the better data retention behavior was achieved. The hydrogen content and the stress analysis of the films are analyzed to find out which is more important in this case. Generally, when the RI of SiON decreases, both parameters also decrease, so it is impossible to find out which parameter is major factor of data retention. To analyze the effects of two parameters separately, we applied two conditions which had the same H contents but quite different stress values. The final data retention levels are same in both conditions. In addition, even if the layer has the same H content, the retention characteristic is changed by how hydrogen is bonded in the film. In conclusion, the data retention characteristic can be explained by mobile ions generated by the hydrogen weakly bonded in PECVD SiON films in our experiment.

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Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices

Electronics ◽

10.3390/electronics10030272 ◽

2021 ◽

Vol 10 (3) ◽

pp. 272

Author(s):

Guodu Han ◽

Yanning Chen ◽

Hongxia Liu ◽

Dong Wang ◽

Rundi Qiao

Keyword(s):

Random Access ◽

Resistive Random Access Memory ◽

Light Transmittance ◽

Electrical Characteristics ◽

Data Retention ◽

Access Memory ◽

Reset Voltage ◽

Retention Characteristic ◽

Visible Light Range ◽

Application Potential

Fully transparent ITO/LaAlO3/ITO structure RRAM (resistive random access memory) devices were fabricated on glass substrate, and ITO/Al2O3/ITO structure devices were set for comparison. The electrical characteristics of the devices were analyzed by Agilent B1500A semiconductor analyzer. Compared with the ITO/Al2O3/ITO RRAM devices, the current stability, SET/RESET voltage distribution, and retention characteristic of the ITO/LaAlO3/ITO RRAM devices have been greatly improved. In the visible light range, the light transmittance of the device is about 80%, that of the LaAlO3 layer is about 95%, the on-off ratio of the device is greater than 40, and the data retention time is longer than 10,000 s. The devices have great optical and electrical properties and have huge application potential as fully transparent RRAM devices.

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A Robust Data Retention Characteristic of Sol–Gel-Derived Nanocrystal Memory by Hot-Hole Trapping

IEEE Electron Device Letters ◽

10.1109/led.2010.2048193 ◽

2010 ◽

Vol 31 (7) ◽

pp. 746-748 ◽

Cited By ~ 5

Author(s):

Chi-Chang Wu ◽

Fu-Hsiang Ko ◽

Wen-Luh Yang ◽

Hsin-Chiang You ◽

Fu-Ken Liu ◽

...

Keyword(s):

Sol Gel ◽

Data Retention ◽

Hole Trapping ◽

Retention Characteristic ◽

Nanocrystal Memory

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Enhanced Data Retention Characteristic on SOHOS-Type Nonvolatile Flash Memory with CF4-Plasma-Induced Deep Electron Trap Level

ECS Transactions ◽

10.1149/1.3568868 ◽

2019 ◽

Vol 35 (2) ◽

pp. 257-263 ◽

Cited By ~ 2

Author(s):

Chih Ren Hsieh ◽

Yung-Yu Chen ◽

Wen-Sin Lin ◽

Gray Lin ◽

Jen-Chung Lou

Keyword(s):

Flash Memory ◽

Electron Trap ◽

Trap Level ◽

Data Retention ◽

Retention Characteristic ◽

Deep Electron Trap

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A Study of a Data Retention Characteristic for Various Schemes of Gate Oxide Formation in Sub-50-nm Saddle-Fin Transistor DRAM Technology

10.7567/ssdm.2010.e-1-3 ◽

2010 ◽

Author(s):

S. W. Ryu ◽

S. K. Chun ◽

T. Jang ◽

B. Lee ◽

D. Lee ◽

...

Keyword(s):

Gate Oxide ◽

Oxide Formation ◽

Data Retention ◽

Retention Characteristic

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Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0091 ◽

2016 ◽

Author(s):

Jungil Mok ◽

Byungki Kang ◽

Daesun Kim ◽

Hongsun Hwang ◽

Sangjae Rhee ◽

...

Keyword(s):

Electric Field ◽

Electrostatic Potential ◽

Critical Dimension ◽

Data Retention ◽

Signal Line ◽

Adjacent Node ◽

Storage Node ◽

Retention Characteristics ◽

Node Voltage ◽

The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

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Non-Visible Defect Analysis of OTP Device

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0198 ◽

2011 ◽

Author(s):

C.Q. Chen ◽

G.B. Ang ◽

Z.X. Xing ◽

Y.N. Hua ◽

Z.Q. Mo ◽

...

Keyword(s):

Trap Center ◽

Data Retention ◽

Auger Analysis ◽

Cross Sectional ◽

Critical Dimensions ◽

Charge Trap ◽

Root Cause ◽

Transmission Electron ◽

Electrical Analysis ◽

Visible Defect

Abstract Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron microscopy) revealed no physical defects or abnormal CDs (critical dimensions). In order to isolate the failed layer or location, electrical analysis was conducted. Several electrical simulation experiments, designed to test the data retention properties of OTP devices, were preformed. Meilke's method [1] was also used to differentiate between mobile ion contamination and charge trap centers. Besides Meilke's method, a new electrical analysis method was used to verify the analysis results. The results of our analysis suggests that SiN charge trap centers are the root cause for the data retention failures, and the ratio of Si/N is the key to charge trap center formation. Auger analysis was used to physically check the Si/N ratio of OTP devices. The results support our hypothesis. Subsequent DOE (Design Of Experiment) experiments also confirm our analysis results. Key Words: OTP, data retention, Non-visible defect, AFP, charge trap center, mobile ion.

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