Fabrication of thickness-controlled NiPd nanoalloy thin films as anticorrosive coatings on 316 L SS substrates for application in marine environment

2021 ◽  
pp. 127253
Author(s):  
Muhammad Ali Ehsan ◽  
A. Madhan Kumar ◽  
Rami K. Suleiman ◽  
Abbas Saeed Hakeem
Keyword(s):  
Thin Films ◽  
Marine Environment ◽  
Anticorrosive Coatings ◽  
Ss Substrates

scholarly journals Electrocatalytic properties of hydroxyapatite thin films electrodeposited on stainless steel substrates

2017 ◽  
Vol 6 (6) ◽  
pp. 255-266 ◽  
Author(s):  
Ahmed Chennah ◽  
Yassine Naciri ◽  
Hassan Ait Ahsaine ◽  
Aziz Taoufyq ◽  
Bahcine Bakiz ◽  
...  
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
High Performance ◽  
Degradation Kinetics ◽  
Electrolytic Solution ◽  
Experimental Conditions ◽  
Energy Dispersion Spectroscopy ◽  
X Ray ◽  
Electrocatalytic Properties ◽  
Ss Substrates

In this work, we have investigated the structural, microstructural, and electrocatalytic properties of hydroxyapatite (HAp) thin films. The HAp films were electrodeposited on stainless-steel (SS) substrates by chronopotentiometry mode from an electrolytic solution. The HAp films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray energy dispersion spectroscopy (EDS). The electrodeposition and electrochemical processes of the hydroxyapatite (HAp) phase were studied by cyclic voltammetry. This HAp/SS system acting as an anode was used for the first time to electrodegrade Rhodamine B (RhB) in aqueous solutions. To follow the degradation kinetics, we used UV-visible spectroscopy. Several parameters such as the current density and the initial concentration of electrolytic solution were determined to optimize the electrodegradation of RhB. The decrease of RhB concentration followed pseudo-first order kinetics law. The rate of RhB degradation in presence of HAp/SS electrode can reach interesting high performance, depending on the electrocatalysis experimental conditions.

scholarly journals The Morphological Changes of SnS Thin Films Deposited on Stainless-Steel Substrates at Low Temperatures

2019 ◽  
Vol 4 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Leticia Treviño Yarce ◽  
Enrique Rosendo Andres ◽  
Roman Romano Trujillo ◽  
Crisoforo Morales Ruiz ◽  
Tomas Diaz Becerril ◽  
...  
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Morphological Changes ◽  
Xrd Analysis ◽  
Tin Sulfide ◽  
Diffraction Peaks ◽  
Ss Substrates ◽  
Sns Thin Films ◽  
Steel Substrates ◽  
By Products

Orthorhombic tin sulfide (SnS) thin films have been deposited on stainless steel (SS) substrates by Chemical Bath Deposition (CBD) at 25, 35 and 70 °C with a deposit time of 8 hours each one. XRD analysis showed that samples obtained at 25 °C and 70 °C present very small diffraction peaks. This can be attributed in the case of the sample obtained at 25 degrees, that the crystallization process is not completed because the temperature is so low and in case of the sample deposited at 75 degrees, a redissolution of the material is carried out. However, sample obtained at 35 °C was polycrystalline with orthorhombic structure and preference plane (111). All samples showed the Raman vibrational modes TO and LO of the SnS and confirms that the samples do not have by-products. It was observed from SEM micrographs that the films consisted of spheres for the sample deposited at 25 °Candsmall flakes for the other samples. From diffuse reflectance measurements the optical band gap calculated was between 1.45 eV to 1.59 eV.

scholarly journals Assessing the Risk of Metals and Their Mixtures in the Antarctic Nearshore Marine Environment with Diffusive Gradients in Thin-Films

2019 ◽  
Vol 54 (1) ◽  
pp. 306-315
Author(s):  
Darren J. Koppel ◽  
Catherine K. King ◽  
Kathryn E. Brown ◽  
Gwilym A. V. Price ◽  
Merrin S. Adams ◽  
...  
Keyword(s):  
Thin Films ◽  
Marine Environment ◽  
The Antarctic ◽  
Diffusive Gradients

Characterization of Textured PZT Thin Films Prepared by Sol-gel Method onto Stainless Steel Substrates

2011 ◽  
Vol 1299 ◽  
Author(s):  
Xuelian Zhao ◽  
Xufang Yu ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Buffer Layers ◽  
Sem Images ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Ss Substrates

ABSTRACTPbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) buffered stainless steel (SS) substrates by sol-gel method. The effect of LNO buffer layer on the orientation and electric properties of PZT thin films for different thicknesses were studied. X-ray diffraction (XRD) results indicated that PZT thin films on SS substrates exhibit the (100) preferred orientation with the LNO buffer layers. Scanning electron microscope (SEM) images show that PZT thin films were well crystallized with grain size of about 100 nm. PZT thin films deposited on SS maintain the excellent ferroelectric properties with remnant polarization of about 20 μC/cm2.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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