Structures and mechanical properties of TiN/SiNx multilayer films deposited by magnetron sputtering at different N2/Ar gas flow ratios

Vacuum ◽  
2008 ◽  
Vol 82 (11) ◽  
pp. 1187-1190 ◽  
Author(s):  
T. An ◽  
H.W. Tian ◽  
M. Wen ◽  
W.T. Zheng
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Multilayer Films ◽  
Ar Gas

Growth of CrNx films by DC reactive magnetron sputtering at constant N2/Ar gas flow

2006 ◽  
Vol 200 (20-21) ◽  
pp. 6047-6053 ◽  
Author(s):  
E. Forniés ◽  
R. Escobar Galindo ◽  
O. Sánchez ◽  
J.M. Albella
Keyword(s):  
Magnetron Sputtering ◽  
Gas Flow ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Ar Gas

Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Magnetron Sputter Deposition ◽  
Ar Gas

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

Microstructure, Mechanical Properties and Thermal Stability of TiAlN/Si3N4 Nano-Multilayer Films Deposited by Reactive Magnetron Sputtering

2009 ◽  
Vol 79-82 ◽  
pp. 489-492
Author(s):  
Jiang Ling Yue ◽  
Yan Sheng Yin ◽  
Ge Yang Li
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Multilayer Films ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si3n4 Layer ◽  
Superlattice Structure

A series of TiAlN/Si3N4 nano-multilayer films with various Si3N4 layer thicknesses were prepared by reactive magnetron sputtering. These multilayers were then annealed at temperatures ranging from 600 to 900°C in air for 1 hour. The composition, microstructure, and mechanical properties of the films were characterized by energy dispersive x-ray spectroscopy, x-ray diffraction, scanning electron microscopy, and nanoindentation. It reveals that under the template effect of TiAlN layers in multilayers, as-deposited amorphous Si3N4 is crystallized and grows coherently with TiAlN layers when Si3N4 layer thickness is below 0.6 nm. Correspondingly, the hardness and elastic modulus of the multilayers increase significantly. With further increase in the layer thickness, Si3N4 transforms into amorphous, resulting in a decrease of hardness and modulus. The TiAlN/Si3N4 nano-multilayers could retain their superlattice structure even up to 900°C. The small decrease in the hardness of multilayers annealed below 800°C was correlated to the release of compressive stress in multilayers. However, oxidation was found on the surface of multilayers when annealed at 800°C, which resulted in a marked decrease in the hardness of multilayers. The multilayers presented higher hardness as compared with the monolithic TiAlN film.

scholarly journals Electrical and optical properties of Ga-doped ZnO thin films deposited by DC magnetron sputtering

2020 ◽  
Vol 4 (1) ◽  
pp. 15
Author(s):  
Lukman Nulhakim ◽  
Monna Rozana ◽  
Brian Yuliarto ◽  
Hisao Makino
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Transparent Conducting Oxide ◽  
Visible Range ◽  
Dc Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Doped Zno ◽  
Ar Gas

The electrical and optical properties of Ga-doped ZnO (GZO) thin film prepared by direct current (dc) magnetron sputtering were investigated. The GZO thin film was deposited on a glass substrate at a substrate temperature (Ts) of room temperature (RT), 150 °C, and 200 °C using DC power of 100 W and an Ar gas flow rate of 450 sccm. The thickness of films was maintained at about 200 nm by controlling the deposition rate of about 12.5 nm/minute. The result showed that the electrical properties improved with increasing Ts. The films deposited at Ts of 200 °C showed the lowest resistivity, highest hall mobility, and carrier concentration compared to other Ts. The average transmittance of the films in the visible range (380-750 nm) was approximately 86.04%. The value of the optical band gap (Eg) was approximately 3.8 eV. The results suggested that GZO films deposited by DC magnetron sputtering at Ts of 200 °C can be applied to transparent conducting oxide (TCO) as an electrode in optoelectronic applications such as solar cells, LEDs and display technology.

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