Layered structure enhances the hardness of Cu-48at.%Cr film prepared by co-sputtering deposition technique

Vacuum ◽  
2021 ◽  
pp. 110339
Author(s):  
Xiaoqin Wang ◽  
Lingping Zhou ◽  
Jiajun Zhu ◽  
Wu Ren ◽  
Wulin Yang ◽  
...  
Keyword(s):  
Layered Structure ◽  
Deposition Technique ◽  
Sputtering Deposition ◽  
Cr Film

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Characteristics of thin films of hexagonal boron nitride mixed with copper controlled by a magnetron co-sputtering deposition technique

2002 ◽  
Vol 185 (3-4) ◽  
pp. 172-176 ◽  
Author(s):  
Masahiro Goto ◽  
Akira Kasahara ◽  
Masahiro Tosa ◽  
Takashi Kimura ◽  
Kazuhiro Yoshihara
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Deposition Technique ◽  
Sputtering Deposition

QUICK SYNTHESIS OF CARBON NITRIDE FILMS BY NEW DC HOLLOW CATHODE PLASMA SPUTTERING DEPOSITION TECHNIQUE

2005 ◽  
Vol 19 (30) ◽  
pp. 4437-4447 ◽  
Author(s):  
P. YANG ◽  
X. P. FENG ◽  
Y. C. SHI ◽  
Y. H. YAN ◽  
J. ZHANG
Keyword(s):  
Substrate Temperature ◽  
Hollow Cathode ◽  
Fourier Transformation ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Particle Energy ◽  
Deposition Technique ◽  
Cathode Plasma ◽  
Sputtering Deposition ◽  
Plasma Sputtering

High N content of carbon nitride films are quickly deposited onto Si (100) substrates at room temperature by using DC hollow cathode plasma sputtering deposition technique. The deposition rate is up to 283 nm/min at the bias voltage of 400 V. The properties of the films are characterized by using XPS, Raman (scattering) and Fourier transformation infrared (FTIR) spectroscopy. Experiments results provide direct evidences that the structures of CN films can be controlled by regulating bias voltages. The maximum sp3 C – N concentration up to 0.73 is obtained. Raman data is used to confirm XPS results. FTIR of the films clearly show C – N and C = N components (1000–1800 cm-1) together with a tiny peak C ≡ N (2181 cm-1). By reducing particle energy and substrate temperature, we have succeeded in suppressing the mechanisms of losing N -contain species during deposition, and achieved a large amount of sp3 bonds of CN films.

Effect of UV-Ozone Treatment on the Performance of ZnO TFTs Fabricated by RF Sputtering Deposition Technique

2014 ◽  
Vol 61 (5) ◽  
pp. 1403-1409 ◽  
Author(s):  
Jia-Ling Wu ◽  
Han-Yu Lin ◽  
Po-Hung Kuo ◽  
Bo-Yuan Su ◽  
Sheng-Yuan Chu ◽  
...  
Keyword(s):  
Rf Sputtering ◽  
Ozone Treatment ◽  
Deposition Technique ◽  
Sputtering Deposition ◽  
Uv Ozone

In situ controlled sputtering deposition of gold nanoparticles on MnO2 nanorods as surface-enhanced Raman scattering substrates for molecular detection

2015 ◽  
Vol 44 (16) ◽  
pp. 7606-7612 ◽  
Author(s):  
Tao Jiang ◽  
Li Zhang ◽  
Han Jin ◽  
Xiaolong Wang ◽  
Jun Zhou
Keyword(s):  
Gold Nanoparticles ◽  
Raman Scattering ◽  
Single Crystal ◽  
Molecular Detection ◽  
Deposition Technique ◽  
Sputtering Deposition ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Enhanced Raman Scattering

Single-crystal tetragonal α-MnO2 nanorods with different amounts of gold nanoparticles (NPs) attached were successfully prepared by a facile sputtering deposition technique.

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