QUICK SYNTHESIS OF CARBON NITRIDE FILMS BY NEW DC HOLLOW CATHODE PLASMA SPUTTERING DEPOSITION TECHNIQUE

2005 ◽  
Vol 19 (30) ◽  
pp. 4437-4447 ◽  
Author(s):  
P. YANG ◽  
X. P. FENG ◽  
Y. C. SHI ◽  
Y. H. YAN ◽  
J. ZHANG
Keyword(s):  
Substrate Temperature ◽  
Hollow Cathode ◽  
Fourier Transformation ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Particle Energy ◽  
Deposition Technique ◽  
Cathode Plasma ◽  
Sputtering Deposition ◽  
Plasma Sputtering

High N content of carbon nitride films are quickly deposited onto Si (100) substrates at room temperature by using DC hollow cathode plasma sputtering deposition technique. The deposition rate is up to 283 nm/min at the bias voltage of 400 V. The properties of the films are characterized by using XPS, Raman (scattering) and Fourier transformation infrared (FTIR) spectroscopy. Experiments results provide direct evidences that the structures of CN films can be controlled by regulating bias voltages. The maximum sp3 C – N concentration up to 0.73 is obtained. Raman data is used to confirm XPS results. FTIR of the films clearly show C – N and C = N components (1000–1800 cm-1) together with a tiny peak C ≡ N (2181 cm-1). By reducing particle energy and substrate temperature, we have succeeded in suppressing the mechanisms of losing N -contain species during deposition, and achieved a large amount of sp3 bonds of CN films.

Nonstoichiometry of Epitaxial FeTiO3+δ Films

2002 ◽  
Vol 746 ◽  
Author(s):  
Tatsuo Fujii ◽  
Makoto Sadai ◽  
Masakazu Kayano ◽  
Makoto Nakanishi ◽  
Jun Takada
Keyword(s):  
Substrate Temperature ◽  
Oxygen Pressure ◽  
Room Temperature ◽  
Oxygen Nonstoichiometry ◽  
Epitaxial Thin Films ◽  
Helicon Plasma ◽  
Sputtering Deposition ◽  
Plasma Sputtering ◽  
Valence States ◽  
Fe Ions

ABSTRACTEpitaxial thin films of (001)-oriented FeTiO3+δ were prepared on α-Al2O3(001) single crystalline substrates by helicon plasma sputtering technique. The FeTiO3+δ films had large oxygen nonstoichiometry, which seriously depended on both substrate temperature and oxygen pressure during the sputtering deposition. The valence states of Fe ions in FeTiO3+δ changed monotonically from Fe2+ to Fe3+ with decreasing the substrate temperature from 900 to 400°C or with increasing the oxygen pressure from 0.9 to 1.8×10-6 Pa. The change of Fe valence states from Fe2+ to Fe3+ induced the magnetic phase transition only for the films prepared at 900°C. The films containing Fe2+ were paramagnetic while those with Fe3+ were antiferromagnetic at room temperature. The oxygen nonstoichiometry of the FeTiO3+δ films was probably produced by cation vacancies and disarrangement of Fe3+ and Ti4+ ions, which randomly occupied both interstitial and substitutional sites of the FeTiO3 related structure.

Preparation And Characterization Of Carbon Nitride Thin Films By Electron Cyclotron Resonance (Ecr) Sputtering Method

1998 ◽  
Vol 555 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Youji Tani ◽  
Masaaki Hisa ◽  
Eiji Kamijo
Keyword(s):  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Cyclotron Resonance ◽  
Carbon Nitride ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
X Ray ◽  
Ecr Plasma ◽  
Plasma Sputtering ◽  
Gas Atmosphere

AbstractCrystalline carbon nitride films were deposited by electron cyclotron resonance (ECR) plasma sputtering method using a carbon target and a nitrogen gas atmosphere. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and X-ray diffraction (XRD). Nitrogen content of the deposited film was varied with substrate selfbias potential and substrate temperature. Bonding states of nitrogen and carbon in the deposited filns were different according to the substrate temperature, sp3 C-N bonds were observed for the film deposited at 600 °C. Crystallization of carbon nitride thin film was observed hen the deposition was carried out an elevated substrate temperature.

Properties of Binary Si:H Materials Prepared by Hydrogen Plasma Sputtering

1989 ◽  
Vol 164 ◽  
Author(s):  
Shoji Furukawa ◽  
Tatsuro Miyasato
Keyword(s):  
Substrate Temperature ◽  
Room Temperature ◽  
Hydrogen Plasma ◽  
Rf Sputtering ◽  
Hydrogen Atmosphere ◽  
Pure Hydrogen ◽  
Rf Power ◽  
Optical Gap ◽  
Plasma Sputtering ◽  
X Ray Scattering

AbstractBinary Si:H materials are prepared by means of the rf sputtering technique in pure hydrogen atmosphere on low temperature (about 100 K) and room temperature substrates. The physical properties of the obtained materials are very much affected by the rf power and substrate temperature during the deposition. The material prepared at a low substrate temperature with a low rf power has a wide optical gap, and shows a visible photoluminescence at room temperature. On the other hand, the material prepared at room temperature with a high rf power contains many Si microcrystals, whose diameters are relatively large, and its optical gap becomes very small. The latter condition causes the dependence of the crystalline direction of the material film on the substrate crystal even at the room temperature. An rf power-modulated multi-layered structure (superlattice) is also proposed, and an apparent diffraction peak can be observed in the low-angle X-ray scattering measurement.

A DC PLASMA DISCHARGE SOURCE AND ITS APPLICATION TO SYNTHESIS OF CARBON AND CARBON NITRIDE THIN FILMS

2007 ◽  
Vol 14 (02) ◽  
pp. 309-314 ◽  
Author(s):  
B. Q. YANG ◽  
P. X. FENG
Keyword(s):  
Hollow Cathode ◽  
Intensity Ratio ◽  
Carbon Nitride ◽  
Plasma Source ◽  
Carbon Films ◽  
Discharge Voltage ◽  
Gas Pressure ◽  
Sputtering Deposition ◽  
Discharge Source ◽  
Helium Gas

In the present work, a novel DC glow discharge source with configurations of hollow cathode electrodes had been developed. Discharge properties of the plasma source had been characterized. Experimental data indicated that the discharge current of the plasma source increased with the discharge voltage. The phase change of the discharge was observed with the increase of gas pressures. After characterization, the hollow cathode electrodes was used to sputtering deposition of both carbon and carbon nitride films. All samples were characterized by using Raman scattering spectroscopy. Typical D- and G-bands in the Raman spectrum of the samples were identified. In the case of carbon nitride films, the intensity ratio of D- and G-bands changed greatly with the deposition period of time. The shifts of D- and G-ands were also observed. In the case of carbon films, the intensity ratio of D- and G-bands slightly increased with an increase of the helium gas pressure from 100 to 200 Pa. The peak positions of the bands remained nearly unchanged with the variation of the helium gas pressure.

Variable corrosion behavior of a thick amorphous carbon coating in NaCl solution

RSC Advances ◽  
2015 ◽  
Vol 5 (116) ◽  
pp. 95750-95763 ◽  
Author(s):  
Renhui Zhang ◽  
Liping Wang ◽  
Wei Shi
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Hollow Cathode ◽  
Vapor Deposition ◽  
Carbon Coating ◽  
Chemical Vapor ◽  
Nacl Solution ◽  
Deposition Technique ◽  
Cathode Plasma ◽  
Vapor Deposition Technique

The present work investigates a thick amorphous multi-layer carbon coating fabricated by a plane hollow cathode plasma-enhanced chemical vapor deposition technique.

Synthesis and Control of Nano-Scale CN Particles and its Distributions

2006 ◽  
Vol 942 ◽  
Author(s):  
Peter x. Feng ◽  
Y. C. Shi
Keyword(s):  
Small Groups ◽  
Carbon Nitride ◽  
Experimental Conditions ◽  
Sputtering Deposition ◽  
Nanoscale Particles ◽  
Particle Distributions ◽  
Nano Scale ◽  
Plasma Sputtering ◽  
And Control ◽  
Deposition Conditions

ABSTRACTMicro-scale to nano-scale carbon nitride (CN) particles were prepared by using plasma sputtering deposition technique. The preferred orientation of nanoscale CN particle distributions was obtained. Particles have been examined by using both Scanning Electron Microscopy (SEM) and Raman scattering (RS) spectroscopy. Setting bias voltage up to 5 kV, plasma-sputtering deposition gave rise to several ring (diameters: 2.4, 3.2, and 4.4 mm) patterns of particle distributions where many small groups of nanoscale particles were observed. Each group of these particles appeared in a sunflower type of distribution, in which the biggest (85 nm) particle at the center was surrounded by many small sizes (30 nm) of CN particles. Disk type of the particles with a diameter of 10 μm was also observed at different experimental conditions. Typical G, D bands and C=N band in the Raman spectra of the samples were identified. The intensity of the D bands obviously varied at the different deposition conditions.

NANO-PARTICLES AND FILMS OF CARBON NITRIDE PREPARED BY USING THE SIMPLE PLASMA SPUTTERING DEPOSITION TECHNIQUES

2006 ◽  
Vol 13 (06) ◽  
pp. 847-853 ◽  
Author(s):  
B. Q. YANG ◽  
H. Y. LI ◽  
Y. C. SHI ◽  
P. X. FENG
Keyword(s):  
Raman Spectra ◽  
Bias Voltage ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Nitrogen Pressure ◽  
Nano Particles ◽  
Sputtering Deposition ◽  
Plasma Sputtering ◽  
Deposition Techniques ◽  
Voltage Scanning

Nanoscale particles and films of carbon nitride (CN) were synthesized on Si (100) substrates at room temperature by using simple plasma sputtering deposition techniques based on DC Glow Discharge with Hollow Cathode electrodes. The bonding structures of the films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. G and D bands in Raman spectra of the samples were identified. Following an increase of the precursor nitrogen pressure, the intensity of the D band in Raman spectra of the sample became strong. Similar phenomenon was also observed with an increase of the bias voltage. Scanning electron microscope images of the samples indicated that smooth and uniform CN x films were obtained at low bias voltages. Whereas, setting a pulsed bias voltage up to 5 kV, several groups of nanoparticles were observed. Each group of nanoparticles showed "sunflower" type of distribution.

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