Solid phase crystallization of amorphous silicon on glass by thin film heater for thin film transistor (TFT) application

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure.

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Device Characteristics of a Poly-Silicon Thin Film Transistor Fabricated by Milc at Low Temperature

MRS Proceedings ◽

10.1557/proc-424-195 ◽

1996 ◽

Vol 424 ◽

Cited By ~ 2

Author(s):

Seok-Woon Lee ◽

Byung-IL Lee ◽

Tae-Hyung Ihn ◽

Tae-Kyung Kim ◽

Young-Tae Kang ◽

...

Keyword(s):

Thin Film ◽

High Performance ◽

Solid Phase ◽

Thin Film Transistor ◽

Silicon Thin Film ◽

Solid Phase Crystallization ◽

Thin Nickel ◽

One Step ◽

Lateral Crystallization ◽

Si Films

AbstractHigh performance poly-Si thin film transistors were fabricated by using a new crystallization method, Metal-Induced Lateral Crystallization (MILC). The process temperature was kept below 500°C throughout the fabrication. After the gate definition, thin nickel films were deposited on top of the TFT's without an additional mask, and with a one-step annealing at 500°C, the activation of the dopants in source/drain/gate a-Si films was achieved simultaneously with the crystallization of the a-Si films in the channel area. Even without a post-hydrogenation passivation, mobilities of the MILC TFT's were measured to be as high as 120cm2/Vs and 90cm2/Vs for n-channel and p-channel, respectively. These values are much higher than those of the poly-Si TFT's fabricated by conventional solid-phase crystallization at around 6001C.

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The Analysis of Degradation Characteristics in Poly-Silicon Thin film Transistor Formed by Solid Phase Crystallization

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2003.16.1.026 ◽

2003 ◽

Vol 16 (1) ◽

pp. 26-32

Keyword(s):

Thin Film ◽

Solid Phase ◽

Thin Film Transistor ◽

Silicon Thin Film ◽

Solid Phase Crystallization ◽

Poly Silicon

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Combinatorial Studies of Switching and Solid-Phase Crystallization in Amorphous Silicon

MRS Proceedings ◽

10.1557/proc-0894-ll02-01 ◽

2005 ◽

Vol 894 ◽

Author(s):

Paul Stradins ◽

Howard M. Branz ◽

Jian Hu ◽

Scott Ward ◽

Qi Wang

Keyword(s):

Thin Film ◽

Film Thickness ◽

Amorphous Silicon ◽

Solid Phase ◽

Reverse Current ◽

Solid Phase Epitaxy ◽

Solid Phase Crystallization ◽

Metallic Contacts ◽

Image Monitoring ◽

Kinetics Of

AbstractCombinatorial approaches are successfully applied for the optimization of electric write-once, thin-film Si antifuse memory devices, as well as for studying the solid-phase epitaxy kinetics of amorphous silicon on c-Si. High forward, low reverse current thin film Si diode deposition recipes are selected using cross-strips of different combinations of amorphous and microcrystalline doped layers, as well as a thickness-wedged intrinsic a-Si:H buffer layer. By studying switching in thickness-wedged a-Si:H layers, it is found that switching requires both a critical field and a critical bias voltage across the metallic contacts. Solid-phase epitaxy speed has a non-linear dependence on the film thickness, which is easily observed by optical image monitoring and analysis in wedged a-Si:H films on c-Si wafers.

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Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid‐phase crystallization: Theory, experiments, and thin‐film transistor applications

Journal of Applied Physics ◽

10.1063/1.356131 ◽

1994 ◽

Vol 75 (7) ◽

pp. 3235-3257 ◽

Cited By ~ 125

Author(s):

Noriyoshi Yamauchi ◽

Rafael Reif

Keyword(s):

Thin Film ◽

Thin Films ◽

Ion Implantation ◽

Polycrystalline Silicon ◽

Solid Phase ◽

Thin Film Transistor ◽

Solid Phase Crystallization ◽

Silicon Thin Films

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Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors

Materials ◽

10.3390/ma15010187 ◽

2021 ◽

Vol 15 (1) ◽

pp. 187

Author(s):

Taiki Kataoka ◽

Yusaku Magari ◽

Hisao Makino ◽

Mamoru Furuta

Keyword(s):

Thin Film ◽

Low Temperature ◽

Carrier Density ◽

Solid Phase ◽

Thin Film Transistor ◽

Field Effect Mobility ◽

Solid Phase Crystallization ◽

Metal Insulator ◽

Fully Depleted ◽

Oxide Tfts

We successfully demonstrated a transition from a metallic InOx film into a nondegenerate semiconductor InOx:H film. A hydrogen-doped amorphous InOx:H (a-InOx:H) film, which was deposited by sputtering in Ar, O2, and H2 gases, could be converted into a polycrystalline InOx:H (poly-InOx:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm2V−1s−1 for an a-InOx:H film to 77.2 cm2V−1s−1 for a poly-InOx:H film. Furthermore, the carrier density of a poly-InOx:H film could be reduced by SPC in air to as low as 2.4 × 1017 cm−3, which was below the metal–insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InOx channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InOx:H channel could be fully depleted by a gate electric field. For the InOx:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (μFE) values of 125.7 and 84.7 cm2V−1s−1 were obtained, respectively. We believe that a nondegenerate poly-InOx:H film has great potential for boosting the μFE of oxide TFTs.

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