Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability

2001 ◽  
Vol 41 (8) ◽  
pp. 1115-1122 ◽  
Author(s):  
B.M Paine ◽  
R.C Wong ◽  
A.E Schmitz ◽  
R.H Walden ◽  
L.D Nguyen ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Circuit Reliability ◽  
Microwave Integrated Circuit ◽  
High Electron Mobility ◽  
Ka Band ◽  
Monolithic Microwave Integrated Circuit ◽  
Integrated Circuit Reliability

A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2468-2472 ◽  
Author(s):  
Munenari Kawashima ◽  
Hitoshi Hayashi ◽  
Hiroyuki Fukuyama ◽  
Hiroshi Okazaki ◽  
Hideaki Matsuzaki ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Electron Mobility ◽  
Resonant Tunneling ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Microwave Integrated Circuit ◽  
High Electron Mobility ◽  
Monolithic Microwave Integrated Circuit

scholarly journals An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 396 ◽  
Author(s):  
Junfeng Li ◽  
Shuman Mao ◽  
Yuehang Xu ◽  
Xiaodong Zhao ◽  
Weibo Wang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Electron Mobility ◽  
High Electron ◽  
Microwave Integrated Circuit ◽  
Large Signal ◽  
Short Channel ◽  
Signal Model ◽  
High Electron Mobility ◽  
Monolithic Microwave Integrated Circuit ◽  
W Band

An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.

Broadband AlGaN/GaN MMIC amplifier

2011 ◽  
Vol 3 (4) ◽  
pp. 399-404
Author(s):  
Ali M. Darwish ◽  
H. Alfred Hung ◽  
Edward Viveiros ◽  
Amr A. Ibrahim
Keyword(s):  
Integrated Circuit ◽  
Low Frequency ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Microwave Integrated Circuit ◽  
Monolithic Microwave Integrated Circuit ◽  
Amplifier Gain ◽  
Chip Size ◽  
In Series ◽  
Amplifier Design

A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology. The amplifier design employs a non-conventional, series-DC/RF-High Electron Mobility Transistor (HEMT) configuration. This configuration provides an alternative design to the conventional traveling-wave amplifier (TWA). It results in a smaller MMIC chip size, and extends amplifier gain to the low-frequency region. The amplifier MMIC utilizes four HEMT devices in series and could be biased at voltages up to 120 V.

High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications

2007 ◽  
Vol 46 (6A) ◽  
pp. 3385-3387 ◽  
Author(s):  
Chia-Yuan Chang ◽  
Edward Yi Chang ◽  
Yi-Chung Lien ◽  
Yasuyuki Miyamoto ◽  
Chien-I Kuo ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Ka Band

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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