A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor

An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.

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A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

VLSI Design ◽

10.1155/2009/803974 ◽

2009 ◽

Vol 2009 ◽

pp. 1-9 ◽

Cited By ~ 2

Author(s):

Mohammad Javad Sharifi ◽

Davoud Bahrepour

Keyword(s):

Electron Mobility ◽

Resonant Tunneling ◽

High Performance ◽

High Electron Mobility Transistor ◽

High Electron ◽

Xor Gate ◽

High Electron Mobility ◽

Existing Structures ◽

Input And Output ◽

Exclusive Or

A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

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Broadband AlGaN/GaN MMIC amplifier

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078711000195 ◽

2011 ◽

Vol 3 (4) ◽

pp. 399-404

Author(s):

Ali M. Darwish ◽

H. Alfred Hung ◽

Edward Viveiros ◽

Amr A. Ibrahim

Keyword(s):

Integrated Circuit ◽

Low Frequency ◽

High Electron Mobility Transistor ◽

High Electron ◽

Microwave Integrated Circuit ◽

Monolithic Microwave Integrated Circuit ◽

Amplifier Gain ◽

Chip Size ◽

In Series ◽

Amplifier Design

A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology. The amplifier design employs a non-conventional, series-DC/RF-High Electron Mobility Transistor (HEMT) configuration. This configuration provides an alternative design to the conventional traveling-wave amplifier (TWA). It results in a smaller MMIC chip size, and extends amplifier gain to the low-frequency region. The amplifier MMIC utilizes four HEMT devices in series and could be biased at voltages up to 120 V.

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