A compact drain-current model for stacked-gate flash memory cells

2000 ◽  
Vol 44 (8) ◽  
pp. 1447-1453 ◽  
Author(s):  
Sheng-Lyang Jang ◽  
Chorng-Jye Sheu ◽  
Chorng-Bin Twu
Keyword(s):  
Flash Memory ◽  
Current Model ◽  
Drain Current ◽  
Memory Cells

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Fluorine Effects Originating From the CVD-W Process on Charge-Trap Flash Memory Cells

2019 ◽  
Vol 66 (1) ◽  
pp. 378-382 ◽  
Author(s):  
Jungmin Moon ◽  
Tae Yoon Lee ◽  
Hyun Jun Ahn ◽  
Tae In Lee ◽  
Wan Sik Hwang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Charge Trap
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