Deep level transient spectroscopy of CVD diamond: the observation of defect states in hydrogenated films

2001 ◽  
Vol 10 (3-7) ◽  
pp. 610-614 ◽  
Author(s):  
Olivier Gaudin ◽  
Michael D. Whitfield ◽  
John S. Foord ◽  
Richard B. Jackman
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Cvd Diamond ◽  
Defect States ◽  
Transient Spectroscopy

Defect States In p-ZnSe:N Grown By MOVPE

1996 ◽  
Vol 442 ◽  
Author(s):  
Shizuo Fujita ◽  
Ken-Ichi Ogata ◽  
Daisuke Kawaguchi ◽  
Zhi Gang Peng ◽  
Shigeo Fujita
Keyword(s):  
Vapor Phase ◽  
Deep Level Transient Spectroscopy ◽  
Annealing Temperature ◽  
Deep Level ◽  
Defect States ◽  
Nitrogen Doped ◽  
Activation Efficiency ◽  
Transient Spectroscopy ◽  
P Type

AbstractConcentration and origin of defect states in p-type nitrogen-doped ZnSe (p-ZnSe:N) grown by metalorganic vapor-phase epitaxy (MOVPE) are discussed by means of timeresolved photoluminescence and deep level transient spectroscopy. Thermal annealing, which is a useful tool for realizing p-type conductivity, results in deep defect states which seem to be associated with Zn vacancies and with nitrogen acceptors. By lowering the annealing temperature, the trap concentrations can be successfully reduced without seriously sacrificing the acceptor activation efficiency, although further reduction of Zn vacancies is pointed out as a remaining requirement for the improvement of quality of MOVPE-grown p-type layers.

Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy

2006 ◽  
Vol 910 ◽  
Author(s):  
Vojtech Nadazdy ◽  
V. Rana ◽  
R. Ishihara ◽  
S. Lanyi ◽  
R. Durny ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Coincidence Site Lattice ◽  
Laser Crystallization ◽  
Defect States ◽  
Energy Position ◽  
Charge Voltage ◽  
Single Grain ◽  
Transient Spectroscopy

AbstractDefect states were quantitatively evaluated in single-grain (SG) Si thin-film transistors (TFTs), prepared by micro-Czochralski (grain filter) process with excimer-laser crystallization, by means of isothermal charge deep-level transient spectroscopy with a high sensitive charge/voltage converter. Its sensitivity reaches 10-16 C and it operates in the range of 2 microseconds - 10 ms. Measurements were performed on the SG-Si TFTs with various energy densities of laser crystallization, various channel areas, and positions in the grain. Our results indicate a direct correlation of fabrication parameters, parameters of the TFT determined from its transfer characteristics, and parameters of defect states (energy position in the band gap, concentration) induced by coincidence site lattice boundaries inside the location-controlled grains and by defects in the grain filter.

Quenched-in Defects in CW Laser Irradiated Virgin Silicon.

1982 ◽  
Vol 14 ◽  
Author(s):  
A. Chantre ◽  
M. Kechouane ◽  
D. Bois
Keyword(s):  
Heat Treatment ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect States ◽  
Native Defects ◽  
Metal Impurities ◽  
Cw Laser ◽  
Transition Metal Impurities ◽  
Transient Spectroscopy ◽  
Iron Chromium

ABSTRACTQuenched-in defects in cw laser irradiated silicon have been identified using deep level transient spectroscopy. Four among the five dominant defect states arise from transition metal impurities (iron, chromium) present in precipitates in the as-grown material and dispersed into the crystal upon heat treatment. Native defects are involved in the form of phosphorous-vacancy complexes, which account for the remaining level.

Laplace current deep level transient spectroscopy measurements of defect states in methylammonium lead bromide single crystals

2017 ◽  
Vol 122 (14) ◽  
pp. 145701 ◽  
Author(s):  
John W. Rosenberg ◽  
Matshisa J. Legodi ◽  
Yevgeny Rakita ◽  
David Cahen ◽  
Mmantsae Diale
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect States ◽  
Lead Bromide ◽  
Transient Spectroscopy

Investigation of Fired and Non-fired Si-SiNx Interface Properties by Deep-level Transient Spectroscopy measurements

2009 ◽  
Vol 1210 ◽  
Author(s):  
Chun Gong ◽  
Eddy Simoen ◽  
Rui Yang ◽  
Niels Posthuma ◽  
Emmanuel Van Kerschaver ◽  
...  
Keyword(s):  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Interface Energy ◽  
Interface Properties ◽  
Defect States ◽  
Transient Spectroscopy ◽  
P Type ◽  
Energy Dependent

AbstractIn this paper, fired and non-fired direct PECVD deposited Si-SiNx interface properties with and without NH3 pretreatment on both n- and p-type mono-crystalline silicon samples were investigated with deep-level transient spectroscopy (DLTS) measurements. A and B defect states are identified at the Si-SiNx interface. Energy-dependent electron and hole capture cross sections were measured by small-pulse DLTS. Fired samples with NH3 pretreatment show the lowest DLTS signals, which suggests the lowest overall Dit. The combination of NH3 pretreatment and firing is also suggested for application in the solar cell fabrication.

Charge Transient Spectroscopy Study Of Deep Centers In Cvd Diamond And Diamond-Like Films

1996 ◽  
Vol 442 ◽  
Author(s):  
V.I. Polyakov ◽  
A.I. Rukovishnikov ◽  
N.M. Rossukanyi ◽  
V.P. Varnin ◽  
I.G. Teremetskaya ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Cvd Diamond ◽  
Spectroscopy Study ◽  
Defect Center ◽  
Continuous Energy ◽  
Continuous Energy Spectrum ◽  
Trapping Centers ◽  
Transient Spectroscopy ◽  
Post Deposition

AbstractThe parameters of trapping centers in CVD diamond and Diamond-Like Carbon (DLC) films were studied by Charge Deep Level Transient Spectroscopy (Q-DLTS). The concentrations, activation energies, captures cross-section and location of the trapping centers were determined. The influence of post deposition heat treatment on the defect center parameters was studied. The Q-DLTS measurements showed that micro defects are acting as point trapping centers and have the continuous energy spectrum with one or two maximums at different energies. The nature of the trapping centers is discussed.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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