Characterization on Solid Phase Diffusion Reaction Behavior and Diffusion Reaction Kinetic of Ti/Al

2017 ◽  
Vol 46 (8) ◽  
pp. 2080-2086 ◽  
Author(s):  
Sun Yu ◽  
Wan Zhipeng ◽  
Hu Lianxi ◽  
Wu Binghua ◽  
Deng Taiqing
Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7417
Author(s):  
Kaiyang Li ◽  
Tiance Zhang ◽  
Yuanzhi Zhu

Porous TiAl3 intermetallics were prepared by the thermal explosion (TE) and space holder method with different particle sizes of Ti and Al powders, and their reaction behaviors were investigated. The results showed that with the increase in the particle size of the Ti and Al powders, the interfacial contact between the particles decreased, resulting in low interfacial energy and reaction activity, making the process difficult to initiate. Meanwhile, the heat flow rose from 358.37 J/g to 730.17 J/g and 566.74 J/g due to the extension of the solid–liquid diffusion time. The TiAl3 structures obviously expanded, and the formation of connected pore channels promoted the porosity. Only when the Ti and Al particle sizes were both small did the solid–solid diffusion significantly appear. At the same time, the TE reaction weakened, so the product particles had no time to fully grow. This indicates that the particle size of the raw materials controlled the TE reaction process by changing the solid–liquid diffusion reaction time and the degree of solid-phase diffusion.


Author(s):  
Won-Ju Cho ◽  
Hyun-Mo Koo ◽  
Woo-Hyun Lee ◽  
Sang-Mo Koo ◽  
Hong-Bay Chung
Keyword(s):  

1989 ◽  
Vol 7 (3) ◽  
pp. 407-413 ◽  
Author(s):  
Ken Yasuda ◽  
Akira Okayama ◽  
Mitsuru Kobayashi ◽  
Takao Funamoto ◽  
Hideyo Kodama ◽  
...  

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Bao Qin ◽  
Yexin Zhou ◽  
Zheng Zhong

PurposeA diffusion-reaction-deformation coupled model is employed and implemented as a user-defined element (UEL) subroutine in the commercial finite element software package ABAQUS.Design/methodology/approachChemical reaction and diffusion are treated as two distinct processes by introducing the extent of reaction and the diffusion concentration as two kinds of independent variables, for which the independent governing equations for chemical reaction and diffusion processes are obtained. Furthermore, an exponential form of chemical kinetics, instead of the linearly phenomenological relation, between the reaction rate and the chemical affinity is used to describe reaction process. As a result, complex chemical reaction can be simulated, no matter it is around or away from equilibrium.FindingsTwo numerical examples are presented, one for validation of the model and another for the modeling of the deflection of a plane caused by a chemical reaction.Originality/value1. Independent governing equations for diffusion and reaction processes are given. 2. An exponential relation between the reaction rate and its driving force is employed. 3. The UEL subroutine is used to implement the finite element procedure.


2015 ◽  
Vol 2015 (1) ◽  
pp. 000862-000867
Author(s):  
Masaru Morita ◽  
Toshiya Akamatsu ◽  
Nobuhiro Imaizumi ◽  
Seiki Sakuyama

As demands accelerate for high density, high speed transmission and low power integrated circuits, 3D-ICs with through-silicon via (TSV) is pursued. In the structure of 3D-ICs, the first die is attached to the second die with micro bump, and the second die is attached to the circuit substrate with a C4 solder bump. The electrode structure of the second die is Cu/Ni UBM. The stress of the Ni-B layer is less than that of the Ni-P layer, and the Ni-B layer can suppress stress and die warpage. The purposes of our study are to clarify the difference in the barrier properties of the Ni-B UBM and Ni-P under bump metal (UBM) and the relevance of the barrier properties of Ni UBM and intermetallic compound (IMC) growth. It was found that an electroless Ni-B plating layer is superior to a Ni-P plating layer for UBM in liquid phase diffusion and in solid phase diffusion, and that a segregated B layer is formed under the IMC layer of a Ni-B land due to reflow soldering. It was estimated that this B layer plays the role of being a barrier layer for solder diffusion.


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