Investigation of Interfaces Between Steel and Vapor Phase Deposited Tungsten by Optical and Electron Microscopy and by Electron Probe Microanalysis

1968 ◽  
Vol 26 ◽  
pp. 394-395
Author(s):  
Karl H. Meyer ◽  
Klemens Stulpe ◽  
John P. Lehner
Keyword(s):  
Vapor Phase ◽  
Erosion Resistance ◽  
High Temperature Strength ◽  
Tungsten Coating ◽  
Thermal Expansion Coefficients ◽  
Operational Life ◽  
Expansion Coefficients ◽  
Pre Treatment ◽  
Mechanical Bonds ◽  
Treatment Procedures

Specific materials requirements such as high temperature strength in combination with corrosion and erosion resistance and limitations in cost and weight often can only be satisfied when a composite material is utilized. A typical example is shown in the form of a thin tungsten layer deposited by the vapor phase process onto the bore of gun barrels to increase their operational life. Initial attempts to plate 4140 steel resulted in flaking-off of the tungsten coating from the substrate but after development of proper pre-treatment procedures of the substrate and of specified deposition temperature, flow ratios and flow rates, firm mechanical bonds between tungsten and substrate were obtained. Requirements for firm bonds are the absence of surface oxide films, small differences in thermal expansion coefficients, interdiffusion of the two metals into each other and other factors.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Influence of Magnetoelastic Anisotropy on Properties of Nanostructured Microwires

2013 ◽  
Vol 646 ◽  
pp. 59-66 ◽  
Author(s):  
Arcady Zhukov ◽  
Margarita Churyukanova ◽  
Lorena Gonzalez-Legarreta ◽  
Ahmed Talaat ◽  
Valentina Zhukova ◽  
...  
Keyword(s):  
Heat Capacity ◽  
Hysteresis Loops ◽  
Magnetic Behaviour ◽  
Soft Magnetic ◽  
Magnetoelastic Anisotropy ◽  
Thermal Expansion Coefficients ◽  
Magnetoelastic Energy ◽  
Expansion Coefficients ◽  
The Difference ◽  
Magneto Resistance

We studied the effect ofthe magnetoelastic ansitropy on properties of nanostructured glass-coated microwires with soft magnetic behaviour (Finemet-type microwires of Fe70.8Cu1Nb3.1Si14.5B10.6, Fe71.8Cu1Nb3.1Si15B9.1 and Fe73.8Cu1Nb3.1Si13B9.1 compositions) and with granular structure (Cu based Co-Cu microwires). The magnetoelastic energy originated from the difference in thermal expansion coefficients of the glass and metallic alloy during the microwires fabrication, affected the hysteresis loops, coercivity and heat capacity of Finemet-type microwires. Hysteresis loops of all as-prepared microwires showed rectangular shape, typical for Fe-rich microwires. As expected, coercivity, HC, of as-prepared microwires increases with decreasing of the ratio ρ defined as the ratio between the metallic nucleus diameter, d to total microwire diameter, D. On the other hand we observed change of heat capacity in microwires with different ratio ρ. In the case of Co-Cu microwires ρ- ratio affected the structure and the giant magneto-resistance of obtained microwires.

Thermally Induced Delamination Buckling of a Thin Metal Layer on a Ceramic Substrate

2003 ◽  
Vol 125 (4) ◽  
pp. 512-519 ◽  
Author(s):  
C. J. Liu ◽  
L. J. Ernst ◽  
G. Wisse ◽  
G. Q. Zhang ◽  
M. Vervoort
Keyword(s):  
Failure Modes ◽  
Research Effort ◽  
Metal Layer ◽  
Electronic Packages ◽  
Ceramic Substrates ◽  
Thermally Induced ◽  
Thermal Expansion Coefficients ◽  
Interface Delamination ◽  
Delamination Buckling ◽  
Expansion Coefficients

Interface delamination failure caused by thermomechanical loading and mismatch of thermal expansion coefficients and other material properties is one of the important failure modes occurring in electronic packages, thus a threat for package reliability. To solve this problem, both academic institutions and industry have been spending tremendous research effort in order to understand the inherent failure mechanisms and to develop advanced and reliable experimental and simulation methodologies, thus to be able to predict and to avoid interface delamination before physical prototyping. Various damage mechanisms can be involved and can result in interface delamination phenomena. These are not all sufficiently addressed and/or reported so far, probably because of the complexities caused by the occurrence of strong geometric and materials nonlinearities. One of the phenomena being insufficiently understood so far is the so-called buckling-driven delamination of thin metalic layers on ceramic substrates. This phenomenon will be discussed in the present paper.

Influence of Cr deficiency on sintering, thermal expansion and electrical properties of La0.75Sr0.25Cr1−xO3−δ as a SOFC interconnect material

2016 ◽  
Vol 30 (11) ◽  
pp. 1650127 ◽  
Author(s):  
Yi Ren ◽  
Wen Ma ◽  
Xiaoying Li ◽  
Jun Wang ◽  
Yu Bai ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Electrical Properties ◽  
Perovskite Phase ◽  
Ignition Process ◽  
Thermal Expansion Coefficients ◽  
Auto Ignition ◽  
Pure Perovskite Phase ◽  
Maximum Conductivity ◽  
Expansion Coefficients ◽  
Interconnect Material

The SOFC interconnect materials La[Formula: see text]Sr[Formula: see text]Cr[Formula: see text]O[Formula: see text] [Formula: see text]–[Formula: see text] were prepared using an auto-ignition process. The influences of Cr deficiency on their sintering, thermal expansion and electrical properties were investigated. All the samples were pure perovskite phase after sintering at 1400[Formula: see text]C for 4 h. The cell volume of La[Formula: see text]Sr[Formula: see text]Cr[Formula: see text]O[Formula: see text] decreased with increasing Cr deficient content. The relative density of the sintered bulk samples increased from 93.2% [Formula: see text] to a maximum value of 94.7% [Formula: see text] and then decreased to 87.7% [Formula: see text]. The thermal expansion coefficients of the sintered bulk samples were in the range of [Formula: see text]–[Formula: see text] (30–1000[Formula: see text]C), which are compatible with that of YSZ. Among the investigated samples, the sample with 0.02 Cr deficiency had a maximum conductivity of 40.4 Scm[Formula: see text] and the lowest Seebeck coefficient of 154.8 [Formula: see text]VK[Formula: see text] at 850[Formula: see text]C in pure He. The experimental results indicate that La[Formula: see text]Sr[Formula: see text]Cr[Formula: see text]O[Formula: see text] has the best properties and is much suitable for SOFC interconnect material application.

Effect of Transverse Moduli on Through-Thickness Hygrothermal Expansion Coefficients of Composite Laminates

2001 ◽  
Vol 68 (6) ◽  
pp. 878-879 ◽  
Author(s):  
H.-L. Yeh ◽  
H.-Y. Yeh
Keyword(s):  
Composite Laminates ◽  
Stress Condition ◽  
Physical Phenomenon ◽  
Point Of View ◽  
Plane Stress Condition ◽  
Geometrical Symmetry ◽  
Thermal Expansion Coefficients ◽  
Isotropic Composite ◽  
Practical Analysis ◽  
Expansion Coefficients

In practical analysis, under a plane stress condition, a unidirectional lamina can be assumed with E2=E3 from geometrical symmetry consideration. However, from an academic point of view, it is interesting to study the case of a lamina with E2≠E3. In this paper the preliminary results of the physical phenomenon about the effect of different transverse moduli E2 and E3 on the through-thickness thermal expansion coefficients αz of quasi-isotropic composite laminates is presented.

Novel Silicon-Elastomers for Advanced Soft Lithography

2006 ◽  
Vol 947 ◽  
Author(s):  
Kyung Choi
Keyword(s):  
Thermal Expansion ◽  
High Resolution ◽  
Soft Lithography ◽  
Materials Properties ◽  
Nano Scale ◽  
Thermal Expansion Coefficients ◽  
High Thermal Expansion ◽  
Expansion Coefficients

ABSTRACTHigh resolution pattern transfers in the nano-scale regime have been considerable challenges in ‘soft lithography’ to achieve nanodevices with enhanced performances. In this technology, the resolution of pattern integrations is significantly rely on the materials' properties of polydimethylsiloxane (PDMS) stamps. Since commercial PDMS stamps have shown limitations in nano-scale resolution soft lithography due to their low physical toughness and high thermal expansion coefficients, we developed stiffer, photocured PDMS silicon elastomers designed, specifically for nano-sized soft lithography and photopatternable nanofabrications.

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