Microanalytical Characterization of Structure and Defects for the Development of Low Temperature Silicon Epitaxial Growth

1999 ◽  
Vol 5 (S2) ◽  
pp. 750-751
Author(s):  
K.M. Jones ◽  
J. Thiesen
Keyword(s):  
Low Temperature ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cross Sectional ◽  
Buried Channel ◽  
Device Processing ◽  
Current Production ◽  
New Processing ◽  
Si Epitaxy

The nano-scale dimensions of next generation VLSI and ULSI devices will drive the development of a variety of new processing requirements. Currently device processing conditions from substrate cleaning to thin film deposition require temperatures in the range of 600°C to 1200°C. In order to realize a Si device circuit architecture which integrates Si/Ge structures or the needed super abrupt junctions of buried channel CMOS, low temperature processes must replace those in current production lines. For these processes to be successfully developed and implemented, proper characterization techniques must be used. In the case of epitaxy, cross-sectional TEM is the tool of choice. We will discuss the prominent role that TEM has played in the development of a new Si epitaxy technology. Recently, at the National Renewable Energy Laboratory (NREL), we have shown low temperature, 195°C to 400°C, Si epitaxy via hot-wire chemical vapor deposition- HWCVD. In the past HWCVD has been used to produce amorphous, micro-crystalline, and polycrystalline Si thin films.

Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

1999 ◽  
Vol 573 ◽  
Author(s):  
J. Etrillard ◽  
H. Maher ◽  
M. Medjdoub ◽  
J. L. Courant ◽  
Y. I. Nissim
Keyword(s):  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Point Of View ◽  
Etch Depth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Inductively Coupled ◽  
Device Processing

ABSTRACTThe use of a low ion energy of an extremely dense plasma has been studied as a dry etching as well as a thin film deposition tool (same source, two different reactors) for InP and GaAs device processing. Under these working conditions it is expected to control well the etch depth or in the case of deposition to obtain high deposition rates. In all cases minimun ion damages are induced on the processed substrate. Both technologies are presented here from the point of view of material analysis as well as device processing demonstration. For etching, the gate recess of an InP-based HEMT has been addressed as one of the key technological step that requires such properties for good device performances. InGaAs/InAlAs HEMT like structures have been grown and the recess of the InGaAs layer has been conducted with a 13eV SiCl4 inductively coupled plasma (ICP). DLTS and AFM measurements made on the exposed AlinAs surface after InGaAs removal indicate that device quality on its electrical and structural properties are achieved. Passivation of fully processed HEMT devices with a ICP enhanced chemical vapor deposition (ICPECVD) silicon nitride film is being studied.

Molecule-Based Magnets—An Overview

MRS Bulletin ◽  
2000 ◽  
Vol 25 (11) ◽  
pp. 21-30 ◽  
Author(s):  
Joel S. Miller ◽  
Arthur J. Epstein
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Magnetic Ordering ◽  
Low Density ◽  
Materials Properties ◽  
The Common ◽  
New Processing ◽  
Very High

Molecule-based magnets are a broad, emerging class of magnetic materials that expand the materials properties typically associated with magnets to include low density, transparency, electrical insulation, and low-temperature fabrication, as well as combine magnetic ordering with other properties such as photoresponsiveness. Essentially all of the common magnetic phenomena associated with conventional transition-metal and rare-earth-based magnets can be found in molecule-based magnets. Although discovered less than two decades ago, magnets with ordering temperatures exceeding room temperature, very high (∼27.0 kOe or 2.16 MA/m) and very low (several Oe or less) coercivities, and substantial remanent and saturation magnetizations have been achieved. In addition, exotic phenomena including photoresponsiveness have been reported. The advent of molecule-based magnets offers new processing opportunities. For example, thin-film magnets can be prepared by means of low-temperature chemical vapor deposition and electrodeposition methods.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition

2012 ◽  
Vol 9 (11-12) ◽  
pp. 1041-1073 ◽  
Author(s):  
Francoise Massines ◽  
Christian Sarra-Bournet ◽  
Fiorenza Fanelli ◽  
Nicolas Naudé ◽  
Nicolas Gherardi
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atmospheric Pressure ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Plasma Technology

Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n+, and p+ amorphous silicon thin films

2013 ◽  
Vol 1536 ◽  
pp. 133-138
Author(s):  
I-Syuan Lee ◽  
Yue Kuo
Keyword(s):  
Deposition Rate ◽  
Gas Flow ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Critical Factor ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Silicon Thin Films ◽  
Deposition Processes

ABSTRACTThe PECVD intrinsic, n+, and p+ a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate, were correlated to SiH*, Hα*, and Hβ* optical intensities. For all films, the deposition rate increases with the increase of the SiH* intensity. For the doped films, the Hα*/SiH* ratio is a critical factor affecting the resistivity. The existence of PH3 or B2H6 in the feed stream enhances the deposition rate. Changes of the free radicals intensities can be used to explain variation of film characteristics under different deposition conditions.

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