Preparation and Analysis of Atom Probe Tips by Xenon Focused Ion Beam Milling

2016 ◽  
Vol 22 (3) ◽  
pp. 576-582 ◽  
Author(s):  
Robert Estivill ◽  
Guillaume Audoit ◽  
Jean-Paul Barnes ◽  
Adeline Grenier ◽  
Didier Blavette
Keyword(s):  
Inductively Coupled Plasma ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Atom Probe ◽  
Milling Process ◽  
Ion Distribution ◽  
Distribution Maps ◽  
Inductively Coupled ◽  
Dimensional Reconstruction

AbstractThe damage and ion distribution induced in Si by an inductively coupled plasma Xe focused ion beam was investigated by atom probe tomography. By using predefined patterns it was possible to prepare the atom probe tips with a sub 50 nm end radius in the ion beam microscope. The atom probe reconstruction shows good agreement with simulated implantation profiles and interplanar distances extracted from spatial distribution maps. The elemental profiles of O and C indicate co-implantation during the milling process. The presence of small disc-shaped Xe clusters are also found in the three-dimensional reconstruction. These are attributed to the presence of Xe nanocrystals or bubbles that open during the evaporation process. The expected accumulated dose points to a loss of >95% of the Xe during analysis, which escapes undetected.

Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

2010 ◽  
Author(s):  
Zixiao Pan ◽  
Wei Wei ◽  
Fuhe Li
Keyword(s):  
Failure Analysis ◽  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Detection Sensitivity ◽  
Chemical Contamination ◽  
Inductively Coupled ◽  
Minimal Sample ◽  
Icp Ms

Abstract This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.

scholarly journals Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

2017 ◽  
Vol 23 (5) ◽  
pp. 916-925
Author(s):  
Pritesh Parikh ◽  
Corey Senowitz ◽  
Don Lyons ◽  
Isabelle Martin ◽  
Ty J. Prosa ◽  
...  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Atom Probe ◽  
Physical Structure ◽  
Oxide Semiconductor ◽  
Device Performance

AbstractThe semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

A Direct and Quantitative Three-Dimensional Reconstruction of the Internal Structure of Disordered Mesoporous Carbon with Tailored Pore Size

2013 ◽  
Vol 19 (3) ◽  
pp. 745-750 ◽  
Author(s):  
Juan Balach ◽  
Flavio Soldera ◽  
Diego F. Acevedo ◽  
Frank Mücklich ◽  
César A. Barbero
Keyword(s):  
Pore Size ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Quantitative Characterization ◽  
Resorcinol Formaldehyde ◽  
Dual Beam ◽  
Dimensional Reconstruction ◽  
A New Technique

AbstractA new technique that allows direct three-dimensional (3D) investigations of mesopores in carbon materials and quantitative characterization of their physical properties is reported. Focused ion beam nanotomography (FIB-nt) is performed by a serial sectioning procedure with a dual beam FIB-scanning electron microscopy instrument. Mesoporous carbons (MPCs) with tailored mesopore size are produced by carbonization of resorcinol-formaldehyde gels in the presence of a cationic surfactant as a pore stabilizer. A visual 3D morphology representation of disordered porous carbon is shown. Pore size distribution of MPCs is determined by the FIB-nt technique and nitrogen sorption isotherm methods to compare both results. The obtained MPCs exhibit pore sizes of 4.7, 7.2, and 18.3 nm, and a specific surface area of ca. 560 m2/g.

Three-dimensional structure analysis of melanocytes and keratinocytes in senile lentigo

Microscopy ◽  
2020 ◽  
Author(s):  
Yuki Mizutani ◽  
Mika Yamashita ◽  
Rie Hashimoto ◽  
Toru Atsugi ◽  
Akemi Ryu ◽  
...  
Keyword(s):  
Electron Micrographs ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Normal Skin ◽  
Three Dimensional ◽  
Dimensional Structure ◽  
Confocal Laser ◽  
Scanning Electron Micrographs ◽  
Large Numbers ◽  
Dimensional Reconstruction

Abstract Senile lentigo or age spots are hyperpigmented macules of skin that commonly develop following long-term exposure to ultraviolet radiation. This condition is caused by accumulation of large numbers of melanosomes (melanin granules) produced by melanocytes within neighboring keratinocytes. However, there is still no consensus regarding the melanosome transfer mechanism in senile lentigo. To date, most pathohistological studies of skin have been two-dimensional and do not provide detailed data on the complex interactions of the melanocyte–keratinocyte network involved in melanosome transfer. We performed a three-dimensional reconstruction of the epidermal microstructure in senile lentigo using three different microscopic modalities to visualize the topological melanocyte–keratinocyte relationship and melanosome distribution. Confocal laser microscopy images showed that melanocyte dendritic processes are more frequently branched and elongated in senile lentigo skin than in normal skin. Serial transmission electron micrographs showed that dendritic processes extend into intercellular spaces between keratinocytes. Focused ion beam-scanning electron micrographs showed that dendritic processes in senile lentigo encircle adjacent keratinocytes and accumulate large numbers of melanosomes. Moreover, melanosomes transferred to keratinocytes are present not only in the supranuclear area but throughout the perinuclear area except on the basal side. The use of these different microscopic methods helped to elucidate the three-dimensional morphology and topology of melanocytes and keratinocytes in senile lentigo. We show that the localization of melanosomes in dendritic processes to the region encircling recipient keratinocytes contributes to efficient melanosome transfer in senile lentigo.

scholarly journals High Throughput Sample Preparation and Analysis Using an Inductively Coupled Plasma (ICP) Focused Ion Beam Source

2010 ◽  
Vol 16 (S2) ◽  
pp. 222-223 ◽  
Author(s):  
S Kellogg ◽  
R Schampers ◽  
S Zhang ◽  
A Graupera ◽  
T Miller ◽  
...  
Keyword(s):  
Sample Preparation ◽  
High Throughput ◽  
Inductively Coupled Plasma ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Source ◽  
Inductively Coupled

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

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