scholarly journals Measuring Conductivity With Scanning Probe Microscopes

2002 ◽  
Vol 10 (2) ◽  
pp. 26-27
Author(s):  
Sergei Kalinin
Keyword(s):  
Scanning Probe Microscopy ◽  
Specific Resistance ◽  
Surface Current ◽  
Scanning Probe ◽  
Conductivity Measurements ◽  
Mesoscopic Transport ◽  
First Case ◽  
Lateral Current ◽  
Good Contact ◽  
Surface Contact Resistance

There are two kinds of conductivity measurements possible with scanning probe microscopy (SPM). In the first case, the specific resistance of material directly below the tip is probed. In the second case, SPM probes local potential induced by the lateral current applied through macroscopic contacts, thus providing the information on the mesoscopic transport properties of the sample.The first set of techniques is invariably based on measuring tip-surface current in contact or intermittent tapping mode. If the tip-surface contact resistance is small (good contact), the current will be limited by the spreading resistance of the sample from which specific resistance can be calculated, assuming that the contact area is known.

Application of Scanning Probe Microscopy Techniques with Electrical Modules in Via Related Defects

2012 ◽  
Author(s):  
Xiang-Dong Wang ◽  
N. David Theodore ◽  
Gil Garteiz ◽  
Paul Sanders
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
State Of The Art ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Large Size ◽  
Atomic Force ◽  
First Case ◽  
Conducting Path ◽  
Microscopy Techniques

Abstract Identifying defects in marginally failed vias has long been a challenge for failure analysis (FA) of state-of-the-art semiconductor integrated circuits. This paper presents two cases where a conventional FA approach is found to not be effective. The first case involves high resistance or marginally open vias. The second case involves early breakdown of large capacitors. The large size of the capacitor and the lack of ways to track electrical flow during diagnosis made it difficult to isolate the defect. The paper shows that conducting atomic force microscopy (C-AFM) and scanning capacitance microscopy (SCM) are effective techniques for isolation of via-related defects. The SCM technique could be applied to samples without a direct conducting path to the substrate, such as SOI samples. On the other hand, C-AFM allows current imaging as well as I-V characterization whenever a direct conductive path is available.

Imaging molecules adsorbed onto electrodes under potential control by scanning probe microscopy

1991 ◽  
Vol 49 ◽  
pp. 376-377 ◽  
Author(s):  
N.J. Tao ◽  
J.A. DeRose ◽  
P.I. Oden ◽  
S.M. Lindsay
Keyword(s):  
Surface Charge ◽  
Environmental Effects ◽  
Scanning Probe Microscopy ◽  
Statistical Significance ◽  
Electrochemical Methods ◽  
Surface Structures ◽  
Scanning Probe ◽  
Potential Control ◽  
Afm Imaging ◽  
Special Circumstances

Clemmer and Beebe have pointed out that surface structures on graphite substrates can be misinterpreted as biopolymer images in STM experiments. We have been using electrochemical methods to react DNA fragments onto gold electrodes for STM and AFM imaging. The adsorbates produced in this way are only homogeneous in special circumstances. Searching an inhomogeneous substrate for ‘desired’ images limits the value of the data. Here, we report on a reversible method for imaging adsorbates. The molecules can be lifted onto and off the substrate during imaging. This leaves no doubt about the validity or statistical significance of the images. Furthermore, environmental effects (such as changes in electrolyte or surface charge) can be investigated easily.

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

Alternating Plane-View and Cross-Section Scanning Capacitance Microscope Technique to Reveal Various Implant Issue

2007 ◽  
Author(s):  
Tsan-Chang Chuang ◽  
Cha-Ming Shen ◽  
Shi-Chen Lin ◽  
Chen-May Huang ◽  
Jin-Hong Chou ◽  
...  
Keyword(s):  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Dopant Concentration ◽  
Scanning Probe ◽  
Correct Selection ◽  
Cross Sectional ◽  
Root Cause ◽  
Excellent Spatial Resolution ◽  
Microscope Technique ◽  
Plane View

Abstract Scanning capacitance microscopy (SCM) is a 2-D carrier and/or dopant concentration profiling technique under development that utilizes the excellent spatial resolution of scanning probe microscopy. However, PV-SCM has limited capability to achieve the goal due to inherent "plane" trait. On top of that, deeper concentration profile just like deep N-well is also one of restrictions to use. For representing above contents more clearly, this paper presents a few cases that demonstrate the alternated and optimized application of PV-SCM and X-SCM. The case studies concern Joint Test Action Group failure and stand-by failure. These cases illustrate that the correct selection from either plane-view or cross-sectional SCM analysis according to the surrounding of defect could help to exactly and rapidly diagnose the failure mechanism. Alternating and optimizing PV-SCM and X-SCM techniques to navigate various implant issue could provide corrective actions that suit local circumstance of defects and identify the root cause.

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