Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices

2020 ◽  
Vol 12 (31) ◽  
pp. 35318-35327
Author(s):  
Yanwei He ◽  
Hao Tian ◽  
Protik Das ◽  
Zhenjun Cui ◽  
Pedro Pena ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Single Layer ◽  
High Quality ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Tunneling Devices

Study of Direct Tunneling and Dielectric Breakdown in Molecular Beam Epitaxial Hexagonal Boron Nitride Monolayers Using Metal–Insulator–Metal Devices

2020 ◽  
Vol 2 (3) ◽  
pp. 747-755 ◽  
Author(s):  
Zhenjun Cui ◽  
Yanwei He ◽  
Hao Tian ◽  
Alireza Khanaki ◽  
Long Xu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Molecular Beam ◽  
Dielectric Breakdown ◽  
Hexagonal Boron Nitride ◽  
Metal Insulator ◽  
Molecular Beam Epitaxial ◽  
Direct Tunneling ◽  
Metal Insulator Metal

Evaluation Of Amorphous Diamond-Like Carbon And Boron Nitride Films As Low Permittivity Dielectrics

1995 ◽  
Vol 381 ◽  
Author(s):  
J. P. Sullivan ◽  
T. A. Friedmann ◽  
C. A. Apblett ◽  
M. P. Siegal ◽  
N. Missert ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Hexagonal Boron Nitride ◽  
Dielectric Constants ◽  
Environmental Stability ◽  
Cubic Phase ◽  
Diamond Like Carbon ◽  
Metal Insulator ◽  
Dielectric Characteristics ◽  
Metal Insulator Metal

AbstractAlthough films of diamond-like carbon (DLC) and hexagonal boron nitride (h-BN) have shown low dielectric constants in the range of 3 to 4, these materials have been unsuitable for use as interconnect dielectrics due to poor thermal stability and environmental degradation. These deficiencies can be addressed by depositing DLC films free of hydrogen (a-tC) and depositing the cubic phase of BN (c-BN). The dielectric characteristics of hydrogen-free DLC and c-BN that have been deposited by pulsed-laser deposition (PLD) have been evaluated using metal-insulator-metal and metal-insulator-semiconductor structures. For comparison, the dielectric characteristics of h-BN deposited by electron cyclotron resonance (ECR) were also evaluated. Despite the superior thermal and environmental stability of the a-tC and c-BN films and the attractively low deposition thermal budget (room temperature deposition for a-tC films, 400°C for c-BN films), the films exhibit dielectric constants comparable to those of bulk diamond and bulk BN, ∼ 6. Furthermore, the a-tC and c-BN films exhibit high compressive stress in the GPa range which limits their usefulness only to those applications requiring a thin dielectric layer, e.g. diffusion barriers or encapsulants.

scholarly journals 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hafnium Oxide ◽  
High Speed ◽  
Hexagonal Boron Nitride ◽  
Temperature Stability ◽  
Cost Effective ◽  
Fold Increase ◽  
Building Blocks ◽  
High Quality ◽  
New Device

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

scholarly journals Facile Synthesis of High-Quality Nano-Size 10B-Enriched Fibers of Hexagonal Boron Nitride

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 222
Author(s):  
Pervaiz Ahmad ◽  
Mayeen Uddin Khandaker ◽  
Fida Rehman ◽  
Nawshad Muhammad ◽  
Mohammad Rashed Iqbal Faruque ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Intensity ◽  
Hexagonal Boron Nitride ◽  
Internal Space ◽  
Facile Synthesis ◽  
High Quality ◽  
Crystalline Nature ◽  
Nano Size ◽  
Advanced Applications

The interesting properties of hexagonal boron nitride (h-BN) and its potential uses in thermo-structural advanced applications have been limited or restricted by its inherent brittleness, which can easily be eliminated by its fibers (h-BN) in nanoscale dimensions. The current study is based on the synthesis of nanoscale 10B-enriched fibers of h-BN (10BNNFs) from 10B in the precursors instead of B in two-hour annealing at 900 °C and one-hour growth at 1000 °C. All of the 10BNNFs are randomly curved and highly condensed or filled from 10h-BN species with no internal space or crack. XRD peaks reported the 10h-BN phase and highly crystalline nature of the synthesized 10BNNFs. 10h-BN phase and crystalline nature of 10BNNFs are confirmed from high-intensity peaks at 1392 (cm−1) in Raman and FTIR spectroscopes.

Generation of High-Density Quantum Emitters in High-Quality, Exfoliated Hexagonal Boron Nitride

2021 ◽  
Vol 13 (39) ◽  
pp. 47283-47292
Author(s):  
Yongliang Chen ◽  
Chi Li ◽  
Simon White ◽  
Milad Nonahal ◽  
Zai-Quan Xu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
High Density ◽  
High Quality ◽  
Quantum Emitters

Synthesis of centimeter-scale high-quality polycrystalline hexagonal boron nitride films from the Fe flux

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
High Quality ◽  
Boron Nitride Films

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...

First-principles study on the heterostructure of twisted graphene/hexagonal boron nitride/graphene sandwich structure

2021 ◽  
Author(s):  
Yiheng Chen ◽  
Wen-Ti Guo ◽  
Zi-si Chen ◽  
Suyun Wang ◽  
Jian-Min Zhang
Keyword(s):  
Phase Transition ◽  
Boron Nitride ◽  
Charge Density ◽  
First Principles ◽  
Sandwich Structure ◽  
Hexagonal Boron Nitride ◽  
Mulliken Population ◽  
Metal Insulator ◽  
Insulator Phase Transition ◽  
Twisted Graphene

Abstract In recent years, the discovery of "magic angle" graphene has given new inspiration to the formation of heterojunctions. Similarly, the use of hexagonal boron nitride, known as white graphene, as a substrate for graphene devices has more aroused great interest in the graphene/hexagonal boron nitride (G/hBN) heterostructure system. Based on the first principles method of density functional theory, the band structure, density of states, Mulliken population, and differential charge density of a tightly packed model of twisted graphene/hexagonal boron nitride/graphene (G/hBN/G) sandwich structure have been studied. Through the establishment of heterostructure models TBG inserting hBN with different twisted angles, it was found that the band gap, Mulliken population, and charge density, exhibited specific evolution regulars with the rotation angle of the upper graphene, showing novel electronic properties and realizing metal-insulator phase transition. We find that the particular value of the twist angle at which the metal-insulator phase transition occurs and propose a rotational regulation mechanism with angular periodicity. Our results have guiding significance for the practical application of heterojunction electronic devices.

scholarly journals Blue-light-emitting color centers in high-quality hexagonal boron nitride

2019 ◽  
Vol 100 (15) ◽  
Author(s):  
Brian Shevitski ◽  
S. Matt Gilbert ◽  
Christopher T. Chen ◽  
Christoph Kastl ◽  
Edward S. Barnard ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Blue Light ◽  
Hexagonal Boron Nitride ◽  
Color Centers ◽  
High Quality ◽  
Light Emitting

Control of hexagonal boron nitride dielectric thickness by single layer etching

2019 ◽  
Vol 7 (21) ◽  
pp. 6273-6278 ◽  
Author(s):  
Zichao Ma ◽  
Clarissa Prawoto ◽  
Zubair Ahmed ◽  
Ying Xiao ◽  
Lining Zhang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Single Layer ◽  
Plasma Process ◽  
Remote Plasma ◽  
Dielectric Thickness

Single layer etching of h-BN is achieved using a two-step remote plasma process.

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