Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors

2019 ◽  
Vol 12 (4) ◽  
pp. 5031-5039 ◽  
Author(s):  
Jisu Jang ◽  
Yunseob Kim ◽  
Sang-Soo Chee ◽  
Hanul Kim ◽  
Dongmok Whang ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Interface Contact ◽  
Clean Interface

Characterizing Bulk Thermal Conductivity and Interface Contact Resistance Effects of Thermal Interface Materials in Electronic Cooling Applications

2003 ◽  
Author(s):  
Vadim Gektin ◽  
Sai Ankireddi ◽  
Jim Jones ◽  
Stan Pecavar ◽  
Paul Hundt
Keyword(s):  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Contact Resistance ◽  
Thermal Performance ◽  
Electronic Cooling ◽  
Thermal Interface Materials ◽  
Thermal Interface ◽  
Interface Contact ◽  
Interface Materials ◽  
Bulk Thermal Conductivity

Thermal Interface Materials (TIMs) are used as thermally conducting media to carry away the heat dissipated by an energy source (e.g. active circuitry on a silicon die). Thermal properties of these interface materials, specified on vendor datasheets, are obtained under conditions that rarely, if at all, represent real life environment. As such, they do not accurately portray the material thermal performance during a field operation. Furthermore, a thermal engineer has no a priori knowledge of how large, in addition to the bulk thermal resistance, the interface contact resistances are, and, hence, how much each influences the cooling strategy. In view of these issues, there exists a need for these materials/interfaces to be characterized experimentally through a series of controlled tests before starting on a thermal design. In this study we present one such characterization for a candidate thermal interface material used in an electronic cooling application. In a controlled test environment, package junction-to-case, Rjc, resistance measurements were obtained for various bondline thicknesses (BLTs) of an interface material over a range of die sizes. These measurements were then curve-fitted to obtain numerical models for the measured thermal resistance for a given die size. Based on the BLT and the associated thermal resistance, the bulk thermal conductivity of the TIM and the interface contact resistance were determined, using the approach described in the paper. The results of this study permit sensitivity analyses of BLT and its effect on thermal performance for future applications, and provide the ability to extrapolate the results obtained for the given die size to a different die size. The suggested methodology presents a readily adaptable approach for the characterization of TIMs and interface/contact resistances in the industry.

Diffusion problems in multi-layer media with nonlinear interface contact resistance

2018 ◽  
Vol 16 (7) ◽  
pp. 1849-1867
Author(s):  
Faker Ben Belgacem ◽  
Faten Jelassi ◽  
Maïmouna Mint Brahim
Keyword(s):  
Contact Resistance ◽  
Interface Contact ◽  
Nonlinear Interface ◽  
Diffusion Problems

Effects of Glass-Additives on the Properties of Ni/Ceramic PTC Composites

2007 ◽  
Vol 280-283 ◽  
pp. 337-340
Author(s):  
Yuan Fang Qu ◽  
Hua Tao Wang ◽  
Xiao Lei Li ◽  
Wei Bing Ma
Keyword(s):  
Contact Resistance ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Ceramic Composites ◽  
Room Temperature Resistivity ◽  
Sintering Aids ◽  
Ptc Effect ◽  
Suitable Amount ◽  
Interface Contact ◽  
Temperature Resistivity

The effects of glass additives on the sintering and properties of Ni/(Ba0.92Sr0.08)TiO3 composites were investigated. Due to the addition of glass additives, Ni/ceramic composites with low room-temperature resistivity and obvious PTC effect were obtained at a low sintering temperature. It was shown that glass-additives could form liquid phase that aided the solution and diffusion of solid atoms, acting as sintering aids to accelerate the sintering and lower the sintering temperature. The room-temperature resistivity decreased first and increased later with the increasing content of glassadditives, which was explained by two functions of glass-additives, decreasing interface contact resistance as sintering aids and adding volume resistance as insulators. Moreover, a suitable amount of glass-additives could enhance the PTC effect unexpectedly, which was attributed to the decrease of the contact resistance existing at the ceramic/ceramic interface.

Manufacturability Issues for Application of Silicides In 0.25 μm CMOS Process and Beyond

1995 ◽  
Vol 402 ◽  
Author(s):  
Q. F. Wang ◽  
A. Lauwers ◽  
F. Jonckx ◽  
M. de Potter ◽  
Chun-Cho Chen ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Contact Resistance ◽  
The Self ◽  
Experimental Results ◽  
Attractive Alternative ◽  
Cmos Process ◽  
Conventional Process ◽  
Junction Formation ◽  
Key Issues ◽  
Interface Contact

AbstractKey issues associated with the self-aligned silicide technology, such as formation of silicides on narrow poly gate, shallow silicided junction formation, gate to source/drain bridging, and interface contact resistance, are discussed. The comparison of important technological aspects for TiSi2 and CoSi2 is presented. The emphasis of this work is focused on the CoSi2 salicide technology with different variations, namely conventional process, Co/Ti capping process, and Ti/Co process. Based on the experimental results, CoSi2 should be considered as an attractive alternative to TiSi2 for the applications in sub-0.25 μm ULSI integrated circuits.

Highly sensitive flexible three-axis tactile sensors based on the interface contact resistance of microstructured graphene

Nanoscale ◽  
2018 ◽  
Vol 10 (16) ◽  
pp. 7387-7395 ◽  
Author(s):  
J. Zhang ◽  
L. J. Zhou ◽  
H. M. Zhang ◽  
Z. X. Zhao ◽  
S. L. Dong ◽  
...  
Keyword(s):  
Contact Resistance ◽  
High Sensitivity ◽  
Tactile Sensors ◽  
Flexible Sensor ◽  
Highly Sensitive ◽  
Interface Contact

A microstructured graphene array-based flexible sensor can measure the three-axis tactile force at a high sensitivity of −1.71 kPa−1with an ultrafast response of 6 ms.

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

2016 ◽  
Vol 108 (10) ◽  
pp. 103303 ◽  
Author(s):  
Ji-Ling Hou ◽  
Daniel Kasemann ◽  
Johannes Widmer ◽  
Alrun A. Günther ◽  
Björn Lüssem ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Interface Contact ◽  
Top Contact

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

2003 ◽  
Vol 764 ◽  
Author(s):  
D.N. Zakharov ◽  
Z. Liliental-Weber ◽  
A. Motayed ◽  
S.N. Mohammad
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
High Resolution Electron Microscopy ◽  
X Ray ◽  
Electron Energy Loss Spectrometry ◽  
Resolution Electron ◽  
Order Of Magnitude ◽  
Contact Surfaces ◽  
Electron Energy Loss ◽  
Magnitude Difference

AbstractOhmic Ta/Ti/Ni/Au contacts to n-GaN have been studied using high resolution electron microscopy (HREM), energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS). Two different samples were used: A - annealed at 7500C withcontact resistance 5×10-6 Ω cm2 and B-annealed at 7750C with contact resistance 6×10-5 Ω cm2. Both samples revealed extensive in- and out-diffusion between deposited layers with some consumption ofGaNlayerand formation of TixTa1-xN50 (0<x<25) at the GaN interface. Almost an order of magnitude difference in contact resistances can be attributed to structure and chemical bonding of Ti-O layers formed on the contact surfaces.

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