scholarly journals Layer-dependent optical and dielectric properties of centimeter-scale PdSe2 films grown by chemical vapor deposition

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
MingYang Wei ◽  
Jie Lian ◽  
Yu Zhang ◽  
ChenLin Wang ◽  
Yueming Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Dielectric Properties ◽  
Vapor Deposition ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Effect Of Temperature ◽  
Cvd Method ◽  
Number Of Layers ◽  
New Type ◽  
Exciton Effect

AbstractPalladium diselenide (PdSe2), a new type of two-dimensional noble metal dihalides (NMDCs), has received widespread attention for its excellent electrical and optoelectronic properties. Herein, high-quality continuous centimeter-scale PdSe2 films with layers in the range of 3L–15L were grown using Chemical Vapor Deposition (CVD) method. The absorption spectra and DFT calculations revealed that the bandgap of the PdSe2 films decreased with the increasing number of layers, which is due to the enhancement of orbital hybridization. Spectroscopic ellipsometry (SE) analysis shows that PdSe2 has significant layer-dependent optical and dielectric properties. This is mainly due to the unique strong exciton effect of the thin PdSe2 film in the UV band. In particular, the effect of temperature on the optical properties of PdSe2 films was also observed, and the thermo-optical coefficients of PdSe2 films with the different number of layers were calculated. This study provides fundamental guidance for the fabrication and optimization of PdSe2-based optoelectronic devices.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

Effect of Temperature and Gas Flow on Bi2Se3 Nanoplates Grown by Chemical Vapor Deposition

2018 ◽  
Vol 18 (11) ◽  
pp. 7590-7594 ◽  
Author(s):  
Peng Gu ◽  
Jinling Yu ◽  
Xiaolin Zeng ◽  
Shuying Cheng ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Effect Of Temperature

Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Silicon Films ◽  
Production Mechanism ◽  
Cvd Method ◽  
Poly Silicon ◽  
Deposition Conditions

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

scholarly journals InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

2021 ◽  
Vol 8 ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Recent Work ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Size Control ◽  
Chemical Vapor ◽  
Metalorganic Chemical

This review will cover recent work on InN quantum dots (QDs), specifically focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. Although there was a significant surge in InN research after the discovery that its bandgap provided potential infrared communication band emission, those studies failed to produce an electroluminescent InN device in part due to difficulties in achieving p-type InN films. Devices utilizing InN QDs, on the other hand, were hampered by the inability to cap the InN without causing intermixing with the capping material. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. Herein, we will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed.

Domain size, layer number and morphology control for graphene grown by chemical vapor deposition

2017 ◽  
Vol 10 (04) ◽  
pp. 1730003 ◽  
Author(s):  
Ruiwen Xue ◽  
Irfan H. Abidi ◽  
Zhengtang Luo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Domain Size ◽  
Past Research ◽  
Production Methods ◽  
The Past ◽  
Number Of Layers ◽  
Size Number ◽  
Wide Range

Over the past a few years, high-quality graphene preparation has been evolved from low-yield micromechanical exfoliation in including a wide range of production methods, in particular by chemical vapor deposition (CVD). Here, we review the state-of-the-art on synthesis of graphene using CVD method and the strategies to control the graphene grain size, number of layers and morphology, mainly focusing on the graphene growth that uses Cu as substrate. We highlight the success of the past research in the field and provide a review of the methods that were used for such controlled synthesis.

The Effects of Hydrogen Flowrate during Pre-Annealing on Graphene Growth by Chemical Vapor Deposition Using Methanol as a Liquid Carbon Precursor

2019 ◽  
Vol 290 ◽  
pp. 107-112
Author(s):  
Raed Abdalrheem ◽  
Fong Kwong Yam ◽  
Abdul Razak Ibrahim ◽  
Khi Poay Beh ◽  
Hwee San Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Light Transmittance ◽  
High Hydrogen ◽  
Flow Rates ◽  
Hydrogen Flow ◽  
Number Of Layers ◽  
Crystallite Sizes ◽  
Grown Graphene

Studying an influence of several parameters on Chemical Vapor Deposition (CVD) used for graphene synthesis is crucial to optimizing the graphene quality to be Compatible with advanced devices. The effect of different hydrogen (H2) flow-rates (0, 50, 100, 150, 200, 250, and 300 sccm) during the pre-annealing process on CVD grown graphene have been reported. This study revealed that hydrogen flow rates during annealing changed the surface roughness/smoothness of the copper substrates. For high hydrogen flow rates, the smoothing effect was increased. Furthermore, the annealed graphene samples emerged a deferent number of layers because of morphological surface changes. According to Raman D- to G-band intensity ratios (ID/IG), the graphene quality was influenced by the annealing hydrogen flowrate. The visible light transmittance values of the grown graphene samples confirmed a few number of layers (mono to seven-layer). Mostly, the samples which annealed under moderate hydrogen flow rates showed less defects intensities and higher crystallite sizes.

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