A novel porphyrin-containing polyimide for memory devices

2016 ◽  
Vol 7 (16) ◽  
pp. 2780-2784 ◽  
Author(s):  
Ming-Chi Tsai ◽  
Chin-Li Wang ◽  
Ching-Yao Lin ◽  
Chia-Liang Tsai ◽  
Hung-Ju Yen ◽  
...  
Keyword(s):  
Retention Time ◽  
Memory Devices ◽  
Donor And Acceptor ◽  
Memory Applications ◽  
Short Retention Time

A novel porphyrin-based polyimide ZnPor-t-DSDA was synthesized for memory applications and exhibits symmetric biswitching characteristic with a short retention time due to the coplanar structure between donor and acceptor units.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

1998 ◽  
Vol 541 ◽  
Author(s):  
Tingkai Li ◽  
Fengyan Zhang ◽  
Sheng Teng Hsu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Memory Devices ◽  
Leakage Currents ◽  
Fatigue Characteristics ◽  
Ferroelectric Memory ◽  
Memory Applications

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

Zinc and linkage effects of novel porphyrin-containing polyimides on resistor memory behaviors

RSC Advances ◽  
2016 ◽  
Vol 6 (91) ◽  
pp. 88531-88537 ◽  
Author(s):  
Chia-Liang Tsai ◽  
Kamani Sudhir K Reddy ◽  
Chen-Yu Yeh ◽  
Chin-Li Wang ◽  
Ching-Yao Lin ◽  
...  
Keyword(s):  
Retention Time ◽  
Memory Devices ◽  
Linkage Groups ◽  
Linkage Effects ◽  
Porphyrin Moiety

The retention time of resistor type memory devices could be tuned by the linkage groups between porphyrin moiety and DSDA on the PIs. Moreover, the metal zinc also plays an important role in further tuning the memory behavior.

Experimental characterization of a short retention time gas-solid separator

1995 ◽  
Vol 85 (1) ◽  
pp. 11-17 ◽  
Author(s):  
G. Donsì ◽  
L. Sesti Osséo ◽  
M. Schenato
Keyword(s):  
Retention Time ◽  
Experimental Characterization ◽  
Short Retention Time

scholarly journals One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2134
Author(s):  
Young Jun Yoon ◽  
Jae Sang Lee ◽  
Dong-Seok Kim ◽  
Sang Ho Lee ◽  
In Man Kang
Keyword(s):  
Quantum Well ◽  
Retention Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Random Access ◽  
Random Access Memory ◽  
The Body ◽  
Access Memory ◽  
Effect Transistor ◽  
Memory Applications

This paper presents a one-transistor dynamic random-access memory (1T-DRAM) cell based on a gate-all-around junction-less field-effect transistor (GAA-JLFET) with a Si/SiGe heterostructure for high-density memory applications. The proposed 1T-DRAM achieves the sensing margin using the difference in hole density in the body region between ‘1’ and ‘0’ states. The Si/SiGe heterostructure forms a quantum well in the body and reduces the band-to-band tunneling (BTBT) barrier between the body and drain. Compared with the performances of the 1T-DRAM with Si homo-structure, the proposed 1T-DRAM improves the sensing margin and retention time because its storage ability is enhanced by the quantum well. In addition, the thin BTBT barrier reduced the bias condition for the program operation. The proposed 1T-DRAM showed a high potential for memory applications by obtaining a high read current ratio at ‘1’ and ‘0’ states about 108 and a long retention time above 10 ms.

Prevention of bromate formation by adsorption phase ozonation using high silica zeolites

2004 ◽  
Vol 4 (5-6) ◽  
pp. 289-296
Author(s):  
K. Shiraishi ◽  
H. Fujita ◽  
J. Izumi ◽  
T. Fujii ◽  
M. Akiba ◽  
...  
Keyword(s):  
Ozone Concentration ◽  
Natural Water ◽  
Retention Time ◽  
Adsorption Phase ◽  
Taste And Odor ◽  
High Silica ◽  
Natural Organic Matters ◽  
High Silica Zeolites ◽  
Ozonation Process ◽  
Short Retention Time

The objectives of this work are to propose a novel ozonation process in adsorption phase using high silica zeolites and elucidate its advantages for simultaneous achievement of prevention of bromate formation and sufficiently high ozonation performance. Bromate is formed from bromide during ozonation under conventional conditions and needs to be reduced at least below a regulated concentration because of its considerable carcinogenicity. The ozonation of 2-methylisoborneol (2-MIB), a model Taste and Odor (T&O) chemical, has been studied in our process. It was known that 2-MIB is adsorbed onto high silica zeolite and oxidized with ozone rapidly in micropores. An adsorbent, named US-Y, in which the SiO2/Al2O3 ratio is 70, was the best candidate in this study in terms of adsorption of 2-MIB, decomposition of 2-MIB and prevention of bromate formation. Actually, bromate formation was not detected, while about seventy five percent of 2-MIB was decomposed with extremely low ozone concentration of 0.07 ppm and short retention time of 0.2 min in the presence of US-Y. Its applicability for the treatment of natural water containing natural organic matters (NOMs) was also demonstrated.

Studies on the Contact Biofilter as a Compact Process in Domestic Sewage Treatment

1986 ◽  
Vol 18 (7-8) ◽  
pp. 185-192
Author(s):  
I. Somiya ◽  
H. Tsuno ◽  
Y. Ono
Keyword(s):  
Retention Time ◽  
Granular Medium ◽  
Treatment Process ◽  
Sewage Treatment ◽  
Domestic Sewage ◽  
Secondary Treatment ◽  
Organic Substances ◽  
Treatment Performance ◽  
Short Retention Time

This paper describes the treatment performance of a newly developed compact treatment process, named the “contact biofilter”. It is composed of a submerged biofilter and a granular medium filter. The research experiments on the process were conducted using domestic sewage. It was clearly shown that this process could reduce SS and total BOD in effluent to below 10 and 20 mg/l, respectively, in a short retention time, and it can be used as a secondary treatment process. The organic substances in sewage are effectively recovered as sludge without extensive mineralization.

Electropolymerized films as a molecular platform for volatile memory devices with two near-infrared outputs and long retention time

2014 ◽  
Vol 5 (3) ◽  
pp. 932-941 ◽  
Author(s):  
Bin-Bin Cui ◽  
Chang-Jiang Yao ◽  
Jiannian Yao ◽  
Yu-Wu Zhong
Keyword(s):  
Retention Time ◽  
Near Infrared ◽  
Memory Devices ◽  
Volatile Memory
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