Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors

2017 ◽  
Vol 5 (2) ◽  
pp. 339-349 ◽  
Author(s):  
Sung Woon Cho ◽  
Da Eun Kim ◽  
Won Jun Kang ◽  
Bora Kim ◽  
Dea Ho Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
Chemical Durability ◽  
Oxide Thin Film ◽  
Large Area ◽  
Solution Processed ◽  
Circuit Integration

The chemical durability of solution-processed oxide films was engineered via Sn-incorporation and thermal-treatment, which was applied for large-area TFT circuit integration.

scholarly journals Study of Self-Patterned Zinc Tin Oxide Thin-Film Transistors Prepared from Photocurable Precursor Solution with Photoacid Generator

2021 ◽  
Vol 59 (3) ◽  
pp. 162-167
Author(s):  
Jae Young Kim ◽  
Geonoh Choe ◽  
Tae Kyu An ◽  
Yong Jin Jeong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Precursor Solution ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Zinc Tin Oxide ◽  
Photoacid Generator

Solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs) have great potential uses in next-generation wearable and flexible electronic products. Zinc and tin precursor materials are naturally abundant and have low fabrication costs. To integrate a single ZTO TFT into logic circuits including inverters, NAND, and NOR gates will require the development of a facile patterning process to replace conventional and complicated photolithography techniques which are usually time-consuming and toxic. In this study, self-patterned ZTO thin films were prepared using a photo-patternable precursor solution including a photoacid generator, (4-methylthiophenyl)methyl phenyl sulfonium triflate. Solution-processed ZTO precursor films fabricated with the photoacid generator were successfully micropatterned by UV exposure, and transitioned to a semiconducting ZTO thin film by heat treatment. The UV-irradiated precursor films became insoluble in developing solvent as the generated proton from the photoacid generator affected the metal-containing ligand and changed the solubility of the metal oxide precursors. The resulting ZTO thin films were utilized as the active layers of n-type TFTs, which exhibited a typical n-type transfer, and output characteristics with appropriate threshold voltage, on/off current ratio, and field-effect mobility. We believe that our work provides a convenient solution-based route to the fabrication of metal-oxide semiconductor patterns.

High Performance Solution-Processed Indium Oxide Thin-Film Transistors

2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film

Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect

2019 ◽  
Vol 33 (5) ◽  
pp. 295-299 ◽  
Author(s):  
Bong-Jin Kim ◽  
Hyung-Jun Kim ◽  
Sung Mok Jung ◽  
Tae-Sik Yoon ◽  
Yong-Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Nitrogen Effect ◽  
Zinc Tin Oxide
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