Polymer–metal coating for high contrast SEM cross sections at the deep nanoscale

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 22884-22895 ◽  
Author(s):  
Daniel Staaks ◽  
Deirdre L. Olynick ◽  
Ivo W. Rangelow ◽  
M. Virginia P. Altoe

A new composite sample preparation method for high contrast cross-sectional SEM imaging.

2013 ◽  
Vol 19 (4) ◽  
pp. 1080-1091 ◽  
Author(s):  
Felipe Rivera ◽  
Robert Davis ◽  
Richard Vanfleet

AbstractTransmission electron microscopy (TEM) and focused ion beam (FIB) are proven tools to produce site-specific samples in which to study devices from initial processing to causes for failure, as well as investigating the quality, defects, interface layers, etc. However, the use of polymer substrates presents new challenges, in the preparation of suitable site-specific TEM samples, which include sample warping, heating, charging, and melting. In addition to current options that address some of these problems such as cryo FIB, we add an alternative method and FIB sample geometry that address these challenges and produce viable samples suitable for TEM elemental analysis. The key feature to this approach is a larger than usual lift-out block into which small viewing windows are thinned. Significant largely unthinned regions of the block are left between and at the base of the thinned windows. These large unthinned regions supply structural support and thermal reservoirs during the thinning process. As proof-of-concept of this sample preparation method, we also present TEM elemental analysis of various thin metallic films deposited on patterned polycarbonate, lacquer, and poly-di-methyl-siloxane substrates where the pattern (from low- to high-aspect ratio) is preserved.


Author(s):  
Hoon Ye Gwee ◽  
Kiong Kay Ng

Abstract Parallel lapping (often called delayering) is a commonly used process in failure analysis of integrated circuits. However, parallel lapping commonly gives rise to the issue of weak sample preparation method especially on specimen mounting. The traditional specimen mounting technique was done by mounted a single die to polishing fixture using drop of super glue. Using conventional methods, problems such as losing the die during polishing, serious edge rounding are often encountered. Further, loading the whole polishing fixture into Scanning Electron Microscopy machine for SEM imaging or Passive Voltage Contrast (PVC) fault localization can be complicated due to the size of polishing fixture. Therefore, an alternative, relatively fast and simple method to overcome the above mentioned obstacles is proposed.


1997 ◽  
Vol 480 ◽  
Author(s):  
K. Tsujimoto ◽  
S. Tsuji ◽  
H. Takatsuji ◽  
K. Kuroda ◽  
H. Saka ◽  
...  

AbstractA rapid and precise sample preparation method using focused ion beam (FIB) etching was developed for cross-sectional transmission electron microscopy (X-TEM) analysis of a thin-film transistor (TFT) fabricated on a glass substrate. Gallium (Ga) ions accelerated at 30 kV and at various incident beam angles were applied during FIB etching to create a uniform thin wall. We successfully prepared X-TEM specimens of long and fragile aluminum (Al) whiskers formed on thin Al films in TFT metallization, where a strong charge is built up during FIB etching. The effect of ion-beam-assisted tungsten deposition prior to FIB etching is discussed. A whisker having a length not exceeding approximately 10 #x00B5;m can be successfully etched to a thickness of 200 nm while keeping its original shape. The performance of this technique is demonstrated in applications to etching at other fragile locations related to TFTs.


Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.


Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.


Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.


Molecules ◽  
2021 ◽  
Vol 26 (8) ◽  
pp. 2277
Author(s):  
Piotr M. Kuś ◽  
Igor Jerković

Recently, we proposed a new sample preparation method involving reduced solvent and sample usage, based on dehydration homogeneous liquid–liquid extraction (DHLLE) for the screening of volatiles and semi-volatiles from honey. In the present research, the method was applied to a wide range of honeys (21 different representative unifloral samples) to determine its suitability for detecting characteristic honey compounds from different chemical classes. GC-FID/MS disclosed 130 compounds from different structural and chemical groups. The DHLLE method allowed the extraction and identification of a wide range of previously reported specific and nonspecific marker compounds belonging to different chemical groups (including monoterpenes, norisoprenoids, benzene derivatives, or nitrogen compounds). For example, DHLLE allowed the detection of cornflower honey chemical markers: 3-oxo-retro-α-ionols, 3,4-dihydro-3-oxoedulan, phenyllactic acid; coffee honey markers: theobromine and caffeine; linden honey markers: 4-isopropenylcyclohexa-1,3-diene-1-carboxylic acid and 4-(2-hydroxy-2-propanyl)cyclohexa-1,3-diene-1-carboxylic acid, as well as furan derivatives from buckwheat honey. The obtained results were comparable with the previously reported data on markers of various honey varieties. Considering the application of much lower volumes of very common reagents, DHLLE may provide economical and ecological advantages as an alternative sample preparation method for routine purposes.


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