scholarly journals A Sample Preparation Method for Paper Cross-Sections using a Focused Ion Beam.

1998 ◽  
Vol 54 (7) ◽  
pp. 360-366 ◽  
Author(s):  
Hiromi Uchimura ◽  
Minoru Kimura
2013 ◽  
Vol 19 (4) ◽  
pp. 1080-1091 ◽  
Author(s):  
Felipe Rivera ◽  
Robert Davis ◽  
Richard Vanfleet

AbstractTransmission electron microscopy (TEM) and focused ion beam (FIB) are proven tools to produce site-specific samples in which to study devices from initial processing to causes for failure, as well as investigating the quality, defects, interface layers, etc. However, the use of polymer substrates presents new challenges, in the preparation of suitable site-specific TEM samples, which include sample warping, heating, charging, and melting. In addition to current options that address some of these problems such as cryo FIB, we add an alternative method and FIB sample geometry that address these challenges and produce viable samples suitable for TEM elemental analysis. The key feature to this approach is a larger than usual lift-out block into which small viewing windows are thinned. Significant largely unthinned regions of the block are left between and at the base of the thinned windows. These large unthinned regions supply structural support and thermal reservoirs during the thinning process. As proof-of-concept of this sample preparation method, we also present TEM elemental analysis of various thin metallic films deposited on patterned polycarbonate, lacquer, and poly-di-methyl-siloxane substrates where the pattern (from low- to high-aspect ratio) is preserved.


Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.


Author(s):  
Hagit Barda ◽  
Irina Geppert ◽  
Avraham Raz ◽  
Rémy Berthier

Abstract An experimental setup is presented, that allows in-situ Transition Electron Microscopy (TEM) investigation of void formation and growth within fully embedded interconnect structure, as a response to an external bias. A special TEM holder is employed to perform in-situ I-V measurements across the Via, simultaneously monitoring the morphological and chemical changes surrounding the void. This work presents in detail a Focused Ion Beam (FIB) based sample preparation method that allows the analysis of a Cu single Via structure found in the advanced microelectronic 14nm FinFET technology, as well as preliminary TEM observations.


Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.


2000 ◽  
Vol 8 (2) ◽  
pp. 36-39
Author(s):  
Clive Chandler

Control of layer thickness is critically important in the manufacture of semiconductor devices. Cross-sectioning exposes device structures for direct examination but conventional sample preparation procedures are difficult, time consuming, and grossly destructive. Cross sections created by focused ion beam (FIB) milling are easier, faster, and less destructive but have not offered the clear layer delineation provided by etching in the conventional sample preparation process. A new gas etch capability (Delineation Etch™ from FEI Company) offers results that are equivalent to conventional wet-etch preparations in a fraction of the time from a single, automated system in the fab without destroying the wafer. The new etch process also has application in milling high-aspect-ratio holes to create contacts to buried metal layers, and in deprocessing devices to reveal silicon and polysilicon structures.


2016 ◽  
Vol 850 ◽  
pp. 722-727 ◽  
Author(s):  
Hui Wang ◽  
Shang Gang Xiao ◽  
Qiang Xu ◽  
Tao Zhang ◽  
Henny Zandbergen

The preparation of thin lamellas by focused ion beam (FIB) for MEMS-based in situ TEM experiments is time consuming. Typically, the lamellas are of ~5μm*10μm and have a thickness less than 100nm. Here we demonstrate a fast lamellas’ preparation method using special fast cutting by FIB of samples prepared by conventional TEM sample preparation by argon ion milling or electrochemical polishing methods. This method has been applied successfully on various materials, such as ductile metallic alloy Ti68Ta27Al5, brittle ceramics K0.5Na0.5NbO3-6%LiNbO3 and semiconductor Si. The thickness of the lamellas depends on the original TEM sample.


2021 ◽  
Author(s):  
Tony Colpaert ◽  
Stefaan Verleye

Abstract Frontside die inspection by Scanning Electron Microscopy (SEM) is critical to investigate failures that appear dispersed over the GaN die surface and that will be very difficult to localize by the typical Focus Ion Beam (FIB) or Transmission Electron Microscopy (TEM) analysis. Frontside sample preparation is; however, extremely challenging if the device was already subjected to sample preparation for backside Photo Emission Microscopy (PEM). In this paper, a novel sample preparation method is presented where all front side layers are removed and only the 5μm GaN die is left for inspection.


Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 22884-22895 ◽  
Author(s):  
Daniel Staaks ◽  
Deirdre L. Olynick ◽  
Ivo W. Rangelow ◽  
M. Virginia P. Altoe

A new composite sample preparation method for high contrast cross-sectional SEM imaging.


Author(s):  
Lihong Cao ◽  
Loc Tran ◽  
Wallace Donna

Abstract This article describes how Focused Ion Beam (FIB) milling methodology enhances the capability of package-level failure analysis on flip-chip packages by eliminating the artifacts induced by using conventional mechanical techniques. Dual- Beam Focused Ion Beam (DB FIB) cross sections were successful in detecting failure mechanisms related either to the die/C4 bump or package defect inside the organic substrate. This paper outlines detailed sample preparation techniques prior to performing the DB FIB cross-sections, along with case studies of DB FIB cross-sections.


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