Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays

2020 ◽  
Vol 5 (11) ◽  
pp. 1530-1537
Author(s):  
Xiaoming Yuan ◽  
Naiyin Wang ◽  
Zhenzhen Tian ◽  
Fanlu Zhang ◽  
Li Li ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Selective Area Epitaxy ◽  
Growth Technique ◽  
Selective Area ◽  
Dependent Growth

Selective area epitaxy is a powerful growth technique to produce III–V semiconductor nanoshape arrays and heterostructures for photonic and electronic applications.

scholarly journals Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

2021 ◽  
Vol 11 (4) ◽  
pp. 1801
Author(s):  
Takuro Fujii ◽  
Tatsurou Hiraki ◽  
Takuma Aihara ◽  
Hidetaka Nishi ◽  
Koji Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Heterogeneous Integration ◽  
Selective Area Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Si Photonics ◽  
Selective Area ◽  
Area Growth ◽  
Indium Gallium

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

Selective Area Epitaxy of InGaN/GaN Stripes, Hexagonal Rings, and Triangular Rings for Achieving Green Emission

2009 ◽  
Vol 1202 ◽  
Author(s):  
Wen Feng ◽  
Vladimir Kuryatkov ◽  
Dana Rosenbladt ◽  
Nenad Stojanovic ◽  
Mahesh Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
Single Type ◽  
Selective Area Epitaxy ◽  
Polar Crystal ◽  
Selective Area ◽  
Narrow Ridge ◽  
Intensity Images ◽  
Two Peaks ◽  
Surface Morphologies

AbstractWe report selective area epitaxy of InGaN/GaN micron-scale stripes and rings on patterned (0001) AlN/sapphire. The objective is to elevate indium incorporation for achieving blue and green emission on semi-polar crystal facets. In each case, GaN structures were first produced, and the InGaN quantum wells (QWs) were subsequently grown. The pyramidal InGaN/GaN stripe along the <11-20> direction has uniform CL emission at 500 nm on the smooth {1-101} sidewall and at 550 nm on the narrow ridge. In InGaN/GaN triangular rings, the structures reveal smooth inner and outer sidewall facets falling into a single type of {1-101} planes. All these {1-101} sidewall facets demonstrate similar CL spectra which appear to be the superposition of two peaks at positions 500 nm and 460 nm. Spatially matched striations are observed in the CL intensity images and surface morphologies of the {1-101} sidewall facets. InGaN/GaN hexagonal rings are comprised of {11-22} and {21-33} facets on inner sidewalls, and {1-101} facets on outer sidewalls. Distinct CL spectra with peak wavelengths as long as 500 nm are observed for these diverse sidewall facets of the hexagonal rings.

Selective area epitaxy of InGaAs/InGaAsP quantum wells studied by magnetotransport

1996 ◽  
Vol 11 (5) ◽  
pp. 735-740 ◽  
Author(s):  
R W Martin ◽  
S L Wong ◽  
D M Symons ◽  
R J Nicholas ◽  
M A Gibbon ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Selective Area Epitaxy ◽  
Selective Area

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

2008 ◽  
Vol 104 (10) ◽  
pp. 103530 ◽  
Author(s):  
W. Feng ◽  
V. V. Kuryatkov ◽  
A. Chandolu ◽  
D. Y. Song ◽  
M. Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Green Light Emission

scholarly journals Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 11
Author(s):  
Viktor Shamakhov ◽  
Dmitriy Nikolaev ◽  
Sergey Slipchenko ◽  
Evgenii Fomin ◽  
Alexander Smirnov ◽  
...  
Keyword(s):  
Growth Rate ◽  
Integrated Circuits ◽  
Quantum Wells ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
Local Change ◽  
Selective Area Epitaxy ◽  
Mocvd Growth ◽  
Selective Area ◽  
Sio2 Mask

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

Selective area epitaxy of semipolar InGaN/GaN multiple quantum wells on GaN microfacets using crossover stripe patterns

2015 ◽  
Vol 83 ◽  
pp. 22-28 ◽  
Author(s):  
Zhenlong Wu ◽  
Peng Chen ◽  
Guofeng Yang ◽  
Zhou Xu ◽  
Feng Xu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area

scholarly journals Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth

Photonics ◽  
2021 ◽  
Vol 8 (5) ◽  
pp. 157
Author(s):  
Jie’an Jiang ◽  
Houqiang Xu ◽  
Li Chen ◽  
Long Yan ◽  
Jason Hoo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Selective Area Growth ◽  
Multiple Quantum ◽  
Growth Technique ◽  
High Brightness ◽  
Light Emitting ◽  
Carrier Recombination ◽  
Selective Area ◽  
Area Growth ◽  
Theoretical Simulations

Pyramid-shaped InGaN/GaN micro-light-emitting diodes (μ-LEDs) were grown on a sapphire substrate using the selective area growth technique. A stable emission wavelength of a single μ-LED pyramid at 412 nm was observed under an injection current from 0.05 to 20 mA, despite the non-uniformity of the thickness and composition of the multiple quantum wells (MQWs) on the sidewall. An efficient carrier confinement and, thus, a high luminescence intensity were demonstrated in the middle of the sidewall through spatial-resolved cathodoluminescence (CL) characterization and were predicted by theoretical simulations. An ultra-high output power density of 1.37 kW/cm2 was obtained from the single μ-LED pyramid, illustrating its great potential for application in high-brightness micro-displays and in virtual reality and augmented reality (VR and AR) applications.

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