A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells
2019 ◽
Vol 7
(18)
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pp. 11265-11271
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Keyword(s):
Type Ii
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Based on first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has a type-II band alignment and a direct band gap. The predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%.