scholarly journals An innovative GC-MS, NMR and ESR combined, gas-phase investigation during chemical vapor deposition of silicon oxynitrides films from tris(dimethylsilyl)amine

2021 ◽  
Author(s):  
Laura Decosterd ◽  
Konstantina Christina Topka ◽  
Babacar Diallo ◽  
Diane Samelor ◽  
Hugues Vergnes ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reaction Pathways ◽  
Coupled Analysis ◽  
Dual Source ◽  
Silicon Oxynitrides ◽  
First Time ◽  
By Products

Coupled analysis by GC-MS, ESR, NMR during CVD of SiOxNy implemented for the first time, highlighting reaction pathways. Silanamine precursor serves as dual source of Si and N, producing silylated radicals and at least fifteen gaseous by-products.

Growth Behavior, Nucleation Control and Excellent Optical Properties of Atomically Thin WS2 Thin Films Processed via Gas-phase Chemical Vapor Deposition

2021 ◽  
pp. 150908
Author(s):  
Nitin Babu Shinde ◽  
Beo Deul Ryu ◽  
Chang-Hee Hong ◽  
Bellarmine Francis ◽  
S. Chandramohan ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Behavior ◽  
Phase Chemical

scholarly journals Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

scholarly journals Gas-phase aluminium acetylacetonate decomposition: Revision of the current mechanism by VUV synchrotron radiation

2021 ◽  
Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Phase Decomposition ◽  
Common Precursor ◽  
Current Mechanism

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

1999 ◽  
Vol 61-62 ◽  
pp. 176-178 ◽  
Author(s):  
A.N Vorob’ev ◽  
A.E Komissarov ◽  
A.S Segal ◽  
Yu.N Makarov ◽  
S.Yu Karpov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Modeling Analysis ◽  
Phase Nucleation

scholarly journals Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

2018 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Group 13 ◽  
Gas Phase Chemistry ◽  
Device Applications ◽  
Phase Chemistry

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.

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