Controllable Size and Crystallinity of Ru Nanoparticles on Carbon Support by Fluidized Bed Reactor-Atomic Layer Deposition for Enhanced Hydrogen Oxidation Activity

Low-temperature fuel cells have attracted a significant attention owing to their low cost and high performance. Herein, uniform Ru nanoparticles (NPs) with various size distribution were synthesized as a non-Pt...

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Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Light Science & Applications ◽

10.1038/s41377-021-00553-2 ◽

2021 ◽

Vol 10 (1) ◽

Author(s):

Jun Yin ◽

Lian Liu ◽

Yashu Zang ◽

Anni Ying ◽

Wenjie Hui ◽

...

Keyword(s):

High Performance ◽

Impact Ionization ◽

Low Cost ◽

Atomic Layer ◽

Light Illumination ◽

Insulation Material ◽

Defect States ◽

Uv Illumination ◽

Layer Deposition ◽

The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

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A High-Performance Free-Standing Zn Anode for Flexible Zinc-Ion Batteries

Nanoscale ◽

10.1039/d1nr01266e ◽

2021 ◽

Author(s):

Chenxi Gao ◽

Jiawei Wang ◽

Yuan Huang ◽

Zixuan Li ◽

Jiyan Zhang ◽

...

Keyword(s):

Energy Density ◽

High Performance ◽

Low Cost ◽

High Energy ◽

Zinc Ion ◽

High Energy Density ◽

Free Standing ◽

Energy Device ◽

Zn Anode ◽

Significant Attention

Zinc-ion batteries (ZIBs) have attracted significant attention owing to their high safety, high energy density, and low cost. ZIBs have been studied as a potential energy device for portable and...

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Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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