High-κ dielectrics and device reliability

Author(s):  
Bhuyian ◽  
Misra
Keyword(s):  
Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 70
Author(s):  
Maria Raposo ◽  
Carlota Xavier ◽  
Catarina Monteiro ◽  
Susana Silva ◽  
Orlando Frazão ◽  
...  

Thin graphene oxide (GO) film layers are being widely used as sensing layers in different types of electrical and optical sensor devices. GO layers are particularly popular because of their tuned interface reflectivity. The stability of GO layers is fundamental for sensor device reliability, particularly in complex aqueous environments such as wastewater. In this work, the stability of GO layers in layer-by-layer (LbL) films of polyethyleneimine (PEI) and GO was investigated. The results led to the following conclusions: PEI/GO films grow linearly with the number of bilayers as long as the adsorption time is kept constant; the adsorption kinetics of a GO layer follow the behavior of the adsorption of polyelectrolytes; and the interaction associated with the growth of these films is of the ionic type since the desorption activation energy has a value of 119 ± 17 kJ/mol. Therefore, it is possible to conclude that PEI/GO films are suitable for application in optical fiber sensor devices; most importantly, an optical fiber-based interrogation setup can easily be adapted to investigate in situ desorption via a thermally stimulated process. In addition, it is possible to draw inferences about film stability in solution in a fast, reliable way when compared with the traditional ones.


2008 ◽  
Vol 55 ◽  
pp. 150-153
Author(s):  
Mun Ja Kim ◽  
Sung Min Park ◽  
Tae Young Lee ◽  
Sang Hyun Park ◽  
Jin Young Kim ◽  
...  

For the growth of Electroluminescent (EL) device market, the attention of many researchers is centered on improving the properties such as brightness, power consumption, device reliability, etc. The powder EL device is one of solutions for the easy mass production, the simplification of structure, and low cost. Although the powder process is the solution, that has the problem with the poor brightness than the film process. So, we focused on increasing the brightness of powder EL device. The emissive layer was made up the composites adding metal oxide nanopowder such as TiO2 and ZnO to powder phosphors. As the data of previous researcher, the TiO2 and ZnO had the different dominating traps by photovoltage measure, that is, TiO2 show hole traps, ZnO show electron traps [1]. The brightness of powder EL device proportions to the high electricfield formation. The TiO2 or ZnO in the powder phosphor composite can help the emission that may be advantageous to form high electricfield at low voltage. The EL devices with green ZnS phosphor were fabricated using spin coating method. The effect of TiO2 and ZnO on the luminescent property of EL device was investigated. The brightness was obtained as applied driving voltage at 400 Hz and frequency variation at 50 V.


1995 ◽  
Vol 405 ◽  
Author(s):  
G. Lucovsky ◽  
D. R. Lee ◽  
Z. Jing ◽  
J. L. Whitten ◽  
C. Parker ◽  
...  

AbstractIncorporation of N-atoms at the Si-Si02 interface in field effect transistors, FETs, with ultrathin dielectrics (≤ 5.5 nm) improves device reliability. Four aspects of our recent research on nitrided Si-Si02 interfaces are discussed in this paper: i) the low-temperature/low-thermal budget process by which interface chemistry is controlled, and optimized; ii) the use of on-line and off-line diagnostics to determine the spatial confinement and concentration of interfacial N-atom incorporation; iii) comparisons of device properties for non-nitrided and nitrided interfaces; and iv) the proposal of an atom-scale model for the role that interfacial N-atoms play in improving device reliability.


2018 ◽  
Vol 21 (10) ◽  
pp. 979-984 ◽  
Author(s):  
Chiara Adami ◽  
Elena Lardone ◽  
Paolo Monticelli

Objectives The aim of this study was to compare the Electronic von Frey Anaesthesiometer (EVF) and the Small Animal ALGOmeter (SMALGO), used to measure sensory thresholds in 13 healthy cats at both the stifle and the lumbosacral joint, in terms of inter-rater and inter-device reliability. Methods Two independent observers carried out the sets of measurements in a randomised order, with a 45 min interval between them, in each cat. The inter-rater and inter-device reliability were evaluated by calculating the inter-rater correlation coefficient (ICC) for each pair of measurements. The Bland–Altman method was used as an additional tool to assess the level of agreement between the two algometers. Results The mean ± SD sensory thresholds measured with the EVF were 311 ± 116 g and 378 ± 178 g for the stifle and for the lumbosacral junction, respectively, whereas those measured with the SMALGO were 391 ±172 g and 476 ± 172 g. The inter-rater reliability was fair (ICC >0.4) for each pair of measurements except those taken at the level of the stifle with the SMALGO, for which the level of agreement between observers A and B was poor (ICC = 0.01). The inter-device reliability was good (ICC = 0.73; P = 0.001). The repetition of the measurements affected reliability, as the thresholds obtained after the 45 min break were consistently lower than those measured during the first part of the trial ( P = 0.02). Conclusions and relevance The EVF and the SMALGO may be used interchangeably in cats, especially when the area to be tested is the lumbosacral joint. However, when the thresholds are measured at the stifle, the inter-observer reliability is better with the EVF than with the SMALGO. The reliability decreases when the measurements are repeated within a short time interval, suggesting a limited clinical applicability of quantitative sensory testing with both algometers in cats.


ASAIO Journal ◽  
1994 ◽  
Vol 40 (1) ◽  
pp. 97-99 ◽  
Author(s):  
T. Mussivand ◽  
W. J. Keon ◽  
D. W. Hoeppner ◽  
A. A. Ciarkowski ◽  
R. T. V. Kung ◽  
...  
Keyword(s):  

2018 ◽  
Vol 69 (5) ◽  
pp. 390-394
Author(s):  
Martin Florovič ◽  
Róbert Szobolovszký ◽  
Jaroslav Kováč ◽  
Jaroslav Kováč ◽  
Aleš Chvála ◽  
...  

Abstract GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.


2012 ◽  
Vol 99 ◽  
pp. 182-189 ◽  
Author(s):  
Vitali Brand ◽  
Christopher Bruner ◽  
Reinhold H. Dauskardt

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