New tailored organic semiconductors thin films for optoelectronic applications

2021 ◽  
Author(s):  
Dinesh Pathak ◽  
Sanjay Kumar ◽  
Sonali Andotra ◽  
Jibin Thomas ◽  
Navneet Kaur ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Optical Absorption ◽  
Band Gap ◽  
Organic Semiconductors ◽  
Low Cost ◽  
Organic Thin Film ◽  
Vis Spectroscopy ◽  
Carbon Based

In this study, we have investigated new tailored organic semiconductors materials for the optoelectronic application, such as organic solar cells. The carbon-based organic semiconductor material has promising advantages in organic thin-film form. Moreover, due to its low cost, organic thin-films are suitable and cheaper than inorganic thin-film. The band gap of organic semiconductors materials can be tuned and mostly lies between 2.0eV to 4eV and the optical absorption edge of organic semiconductors typically lies in between 1.7eV to 3eV. They can be easily tailored by modifying the carbon chain and legends and looks promising for engineering the band gap to harness solar spectrum. In this work, with new tailored organic semiconductors the solution route is explored which is low cost processing method. (Anthracen-9-yl) methylene naphthalene-1-amine, 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one and N-(anthracen-9-ylmethyl)-3,4-dimethoxyaniline thin-films are processed by spin coating method with changing concentration such as 0.05 wt% and 0.08 wt%. Thin films of Organic semiconductors were prepared on glass substrate and annealed at 55°C. The structural and optical behaviour of (Anthracen-9-yl) methylene naphthalene-1-amine, 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one and N-(anthracen-9-ylmethyl)-3,4-dimethoxyaniline organic semiconductors thin films is studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and UV-Visible Spectroscopy technique. The XRD data of synthesized sample suggests the Nano crystallinity of the Organic layers. The SEM micrographs shows the dense packing when we increase the wt% 0.05 to 0.08. Analysis of the optical absorption measurements found that the engineered band gap of synthesized thin films are 2.18eV, 2.35eV, 2.36eV, 2.52eV and 2.65eV which suggest suitability for applications of Optoelectronic devices such as solar cell. Such light weight, eco-friendly and disposable new carbon based materials seems to have potential to replace other traditional hazardous heavy materials for future eco-friendly flat fast electronics. Keywords: Thin-film, solar cell, tailored organic semiconductors, XRD, SEM, UV-Vis spectroscopy.

scholarly journals Some Preliminary Results of the Synthesis and Investigation of the Glass/FTO/Si/Au/ Embedded Thin Film for Application in the Modified Plasmonic Solar Cell

2021 ◽  
Vol 37 (1) ◽  
Author(s):  
Nguyen Tien Thanh ◽  
Dao Tien Thanh ◽  
Nguyen Si Hieu ◽  
Nguyen Thi Mai Huong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Layer ◽  
Solar Cell ◽  
Optical Absorption ◽  
Thermal Annealing ◽  
Solar Cell Performance ◽  
Vis Spectroscopy ◽  
Amorphous Si

This paper outlines the synthesis of the glass/FTO/Au/ and of the glass/FTO/Si/Au/ nanoparticles embedded thin films and then outlines some obtained experiment results concerning their properties of surface morphology, structure, chemical composition and optical absorption in comparison. Based on the measured results of SEM, EDX, XRD and UV-VIS spectroscopy we observed that the structure of the sputtered Si layer is amorphous phase meanwhile the structure of the sputtered Au layer is crystallized phase. Depending on the sputtered layers (Si, Au) thicknesses and technological conditions the different surfaces morphologies of the Au flat surface layer or the Au bumpy surface layer with different sizes of nanoparticles /clusters are formed on both the samples surfaces of FTO and amorphous Si layers. Notably, the optical absorption spectra of glass/FTO/Si/Au thin film in both cases of thermal annealing and without thermal annealing are significantly enhanced and shifted to blue- and red regions, these results can be explained by the role of the amorphous Si layer, as well as the Si/Au Schottky layers/nanoparticles barrier configurations caused. The glass/FTO/Si/Au layer/nanoparticles thin films could be used for integration with the core structure (Au/TiO2) of plasmonic solar cell for aiming to  enhance the solar cell performance.

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

Preparation of CuIn(SxSe1–x)2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe2

2010 ◽  
Vol 25 (12) ◽  
pp. 2426-2429 ◽  
Author(s):  
Guangjun Wang ◽  
Gang Cheng ◽  
Binbin Hu ◽  
Xiaoli Wang ◽  
Shaoming Wan ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Band Gap ◽  
Low Cost ◽  
Chalcopyrite Structure ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray ◽  
Sulfurization Temperature ◽  
Tunable Band Gap

In this paper, polycrystalline CuIn(SxSe1–x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1–x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1–x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.

scholarly journals A review on Spray pyrolysis deposited CZTS thin films for solar cell applications

2021 ◽  
Vol 23 (09) ◽  
pp. 1196-1206
Author(s):  
C.S.A. Raj ◽  
◽  
S. Sebastian ◽  
Susai Rajendran ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Spray Pyrolysis ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Research Area ◽  
Film Deposition ◽  
Deposition Technique ◽  
Czts Thin Films

Cu2ZnSnS4 generally abridged as CZTS is a potential material for economical thin film solar cells, due to its appropriate band gap energy of around 1.5 eV and great absorption coefficient of above 104 cm-1. All the constituents of this material are plentiful in the earth’s crust, and they are non-hazardous making it an elegant alternative. Subsequent to the early achievement of the CZTS based solar cell with its light to electrical conversion efficiency of 0.6%, significant advancement in this research area has been attained, particularly in the last seven years. Currently, the conversion effectiveness of the CZTS thin film solar cell has enhanced to 24%. More than 500 papers on CZTS have been available and the greater part of these converses the preparation of CZTS thin films by diverse methods. Until now, many physical and chemical methods have been engaged for preparing CZTS thin films. Amongst them, spray pyrolysis is a flexible deposition technique. Spray pyrolysis is a simple deposition technique that finds use in widespread areas of thin film deposition research. This method is appropriate for depositing good quality films with low cost, clean deposition, and simplicity and flexibility in the manufacturing design. This script, reviews the synthesis of CZTS semiconductor thin films deposited by spray pyrolysis. This analysis initiates with a portrayal of the spray pyrolysis system, and then establish the CZTS and preparation of the CZTS precursor for coating. A review of spray pyrolysis of CZTS thin films are discussed in detail. To conclude, we present perspectives for advancements in spray pyrolysis for a CZTS based solar cell absorber layer.

Physical Characteristics of CBD Synthesized CdZnS Thin Films

2017 ◽  
pp. 186-208
Author(s):  
Ayan Mukherjee ◽  
Partha Mitra
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Sulfide ◽  
Chemical Method ◽  
Low Cost ◽  
Industrial Applications ◽  
Photovoltaic Devices ◽  
Vis Spectroscopy ◽  
Cadmium Zinc Sulfide ◽  
Cadmium Zinc

In recent years, ternary cadmium zinc sulfide (CdZnS) alloy compounds have been paid much attention in the fields of opto-electronics, particularly in photovoltaic devices. CdZnS thin films can be prepared by different techniques among which chemical methods have more advantages. Among different chemical method, Chemical Bath Deposition (CBD) is simple, low cost and widely applicable in industrial applications. In this chapter, we have discussed different methods of preparation of CdZnS thin film and their obtained properties. Also, the films are characterized by XRD, TEM, FESEM, EDAX, UV-Vis spectroscopy, etc. The properties of CdZnS gives insight of the properties of ternary thin film semiconductor and it will help to design semiconductor with tuneable properties for future applications in optoelectronic sector.

Ge-alloyed CZTSe thin film solar cell using molecular precursor adopting spray pyrolysis approach

RSC Advances ◽  
2016 ◽  
Vol 6 (44) ◽  
pp. 37621-37627 ◽  
Author(s):  
Dhruba B. Khadka ◽  
SeongYeon Kim ◽  
JunHo Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Thin Film Solar Cell ◽  
Molecular Precursors ◽  
Molecular Precursor

We report a promising fabrication approach for the synthesis of Ge-alloyed Cu2Zn(GexSn1−x)Se4 (CZGTSe) thin films using molecular precursors by spray pyrolysis to obtain band gap tuned kesterite solar cells.

scholarly journals The influence of selenium amount added into the graphite box during the selenization of solution deposited CIGSe thin films.

2021 ◽  
Vol 2053 (1) ◽  
pp. 012008
Author(s):  
G M Albalawneh ◽  
M M Ramli ◽  
M ZM Zain ◽  
Z Sauli
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
High Performance ◽  
Low Cost ◽  
Precursor Solution ◽  
Precursor Film ◽  
Fine Grained ◽  
Thin Film Fabrication ◽  
The Impact

Abstract Cu(In,Ga)Se2 (CIGSe) semiconductor is an efficient light absorber material for thin-film solar cell technology. The sequential evaporation of precursor solution, followed by the selenization process, is a promising non-vacuum and low-cost approach for CIGSe thin-film fabrication. The main properties of CIGSe thin films are strongly affected by the post-selenization step. Hence, thorough control of selenization parameters is essential for achieving pure crystalline, large grain films needed for high-performance solar cell devices. In this study, the impact of selenium (Se) amount added during the selenization step was evaluated. The structural, morphological, and compositional properties of the selenized thin films were investigated. The CIGSe precursor film was deposited by a spin-coating technique using a thiol/amine-based solution, followed by annealing with different Se amounts (100, 200, and 300 mg) within a partially closed small round graphite container. In all cases, uniform films of 1.2–1.5 µm thickness with a well-defined single chalcopyrite phase were obtained. It was observed that the grain size and Se content increased with increasing Se mass added. Moreover, the sample selenized with 200 mg Se resulted in higher surface coverage, thinner fine-grained layer, and less MoSe2 formation than the excess Se samples.

The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications

1992 ◽  
Vol 50 (2) ◽  
pp. 1384-1385
Author(s):  
K.M. Jones ◽  
F.S. Hasoon ◽  
A.B. Swartzlander ◽  
M.M. Al-Jassim ◽  
T.L. Chu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
South Florida ◽  
Semiconductor Films ◽  
Heteroepitaxial Growth ◽  
Amorphous Substrates ◽  
Sublimation Method

Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the structural and electrical properties of polycrystalline semiconductor films, thereby improving the device characteristics. Cadmium telluride (CdTe) has long been recognized as a promising thin-film photovoltaic material. Under NREL's sponsorship, the University of South Florida has recently developed a record high efficiency (14.6% under global AM1.5 conditions) thin-film CdS/CdTe heterojunction solar cell for potential low-cost photovoltaic applications. The solar cell has the structure:glass (substrate)/SnO2:F/CdS/CdTe/HgTe (contact)The CdS films were grown from an aqueous solution, while the CdTe films were deposited by the closespaced sublimation method.

CuInSe2 thin film solar cells prepared by low-cost electrodeposition techniques from a non-aqueous bath

RSC Advances ◽  
2015 ◽  
Vol 5 (109) ◽  
pp. 89635-89643 ◽  
Author(s):  
Priyanka U. Londhe ◽  
Ashwini B. Rohom ◽  
Nandu B. Chaure
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Low Cost ◽  
Cell Structure ◽  
Power Conversion ◽  
Thin Film Solar Cells ◽  
Solar Cell Structure ◽  
Cuinse2 Thin Film

Highly crystalline and stoichiometric CIS thin films have been electrodeposited from non-aqueous bath at temperature 130 °C. Superstrate solar cell structure (FTO/CdS/CIS/Au) exhibited 4.5% power conversion efficiency.

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