scholarly journals Suspended Microracetrack Resonator with Lateral Sub-wavelength-Grating Metamaterial Cladding for Mid-infrared Sensing Applications

2018 ◽  
Vol 17 ◽  
pp. 02005 ◽  
Author(s):  
Zecen Zhang ◽  
Geok Ing Ng ◽  
Ting Hu ◽  
Haodong Qiu ◽  
Xin Guo ◽  
...  
Keyword(s):  
Chemical Sensing ◽  
Extinction Ratio ◽  
Silicon On Insulator ◽  
Propagation Loss ◽  
Index Method ◽  
Mid Infrared ◽  
Infrared Sensing ◽  
Sensing Applications ◽  
The One ◽  
Sub Wavelength

A one-time etching suspended microracetrack resonator with lateral sub-wavelength-grating (SWG) metamaterial cladding is theoretically and experimentally demonstrated on commercial 340 nm-thick-top-silicon silicon-on-insulator (SOI) platform for mid-infrared (MIR) bio-chemical sensing applications. The suspended structure can offer a larger exposed area of waveguides with the testing chemicals as well as a decent sensitivity. And the one-time etching process also eases the fabrication. The suspended waveguide is optimized with a balance between propagation loss and the sensitivity. The suspended microracetrack resonator is experimentally measured at 2 μm wavelength and well fitted with an extinction ratio (ER) of 12.3 dB and a full-width-at-half-maximum (FWHM) of 0.12 nm, which corresponds to a quality factor (Q factor) of 16600. With the equivalent refractive index method and a specially developed numerical model, the expected sensitivities of fundamental TE and TM mode were calculated as 58 nm/RIU and 303 nm/RIU respectively. This one-time etching suspended microracetrack resonator shows great potential in MIR optical bio-chemical sensing applications.

scholarly journals Mid infrared polarization engineering via sub-wavelength biaxial hyperbolic van der Waals crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar
Keyword(s):  
Room Temperature ◽  
Extinction Ratio ◽  
Polarization State ◽  
Van Der Waals ◽  
Photonic Devices ◽  
Mid Infrared ◽  
Precise Control ◽  
Electromagnetic Simulations ◽  
Frequency Regime ◽  
Sub Wavelength

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .

Near-Field Mapping of Localized Plasmon Resonances in Metal-Free, Nanomembrane Graphene for Mid-Infrared Sensing Applications

2018 ◽  
Vol 1 (11) ◽  
pp. 6454-6462 ◽  
Author(s):  
Mai Desouky ◽  
M. R. Anisur ◽  
Maria Alba ◽  
R. K. Singh Raman ◽  
Mohamed. A. Swillam ◽  
...  
Keyword(s):  
Near Field ◽  
Mid Infrared ◽  
Field Mapping ◽  
Metal Free ◽  
Infrared Sensing ◽  
Sensing Applications ◽  
Plasmon Resonances ◽  
Localized Plasmon ◽  
Localized Plasmon Resonances

scholarly journals Designing Mid-Infrared Gold-Based Plasmonic Slot Waveguides for CO2-Sensing Applications

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2669
Author(s):  
Parviz Saeidi ◽  
Bernhard Jakoby ◽  
Gerald Pühringer ◽  
Andreas Tortschanoff ◽  
Gerald Stocker ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Propagation Loss ◽  
Asymmetric Structure ◽  
Free Standing ◽  
Propagation Length ◽  
Mid Infrared ◽  
Sensing Applications ◽  
A Value ◽  
Standing Structure ◽  
Slot Waveguides

Plasmonic slot waveguides have attracted much attention due to the possibility of high light confinement, although they suffer from relatively high propagation loss originating from the presence of a metal. Although the tightly confined light in a small gap leads to a high confinement factor, which is crucial for sensing applications, the use of plasmonic guiding at the same time results in a low propagation length. Therefore, the consideration of a trade-off between the confinement factor and the propagation length is essential to optimize the waveguide geometries. Using silicon nitride as a platform as one of the most common material systems, we have investigated free-standing and asymmetric gold-based plasmonic slot waveguides designed for sensing applications. A new figure of merit (FOM) is introduced to optimize the waveguide geometries for a wavelength of 4.26 µm corresponding to the absorption peak of CO2, aiming at the enhancement of the confinement factor and propagation length simultaneously. For the free-standing structure, the achieved FOM is 274.6 corresponding to approximately 42% and 868 µm for confinement factor and propagation length, respectively. The FOM for the asymmetric structure shows a value of 70.1 which corresponds to 36% and 264 µm for confinement factor and propagation length, respectively.

Engineering sub-wavelength silicon waveguides for sensing applications in the near-infrared and mid-infrared band (Conference Presentation)

2019 ◽  
Author(s):  
Juan Gonzalo Wangüemert-Pérez ◽  
Alejandro Sánchez-Postigo ◽  
Abdelfettah Hadij-ElHouati ◽  
Jonas Leuermann ◽  
Carlos Pérez-Armenta ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Band ◽  
Mid Infrared ◽  
Silicon Waveguides ◽  
Sensing Applications ◽  
Sub Wavelength

Mid-infrared silicon photonics for sensing applications

2012 ◽  
Vol 1437 ◽  
Author(s):  
Goran Z. Mashanovich ◽  
Milan M. Milosevic ◽  
Milos Nedeljkovic ◽  
David Cox ◽  
Vittorio M. N. Passaro ◽  
...  
Keyword(s):  
Wavelength Region ◽  
Medical Diagnostics ◽  
Group Iv ◽  
Propagation Loss ◽  
Ring Resonators ◽  
Optical Modulator ◽  
Active Device ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Sensing Applications

ABSTRACTThe mid-infrared wavelength region offers a plethora of possible applications ranging from sensing, medical diagnostics and free space communications, to thermal imaging and IR countermeasures. Hence group IV mid-infrared photonics is attracting more research interest lately. Sensing is an especially attractive area as fundamental vibrations of many important gases are found in the 3 to 14 μm spectral region. To realise group IV photonic mid-infrared sensors several serious challenges need to be overcome. The first challenge is to find suitable material platforms for the mid-infrared. In this paper we present experimental results for passive mid-infrared photonic devices realised in silicon-on-insulator (SOI), silicon-on-sapphire (SOS), and silicon on porous silicon (SiPSi). Although silicon dioxide is lossy in most parts of the mid-infrared, we have shown that it has potential to be used in the 3-4 μm region. We have characterized SOI waveguides with < 1 dB/cm propagation loss. We have also designed and fabricated SOI passive devices such as MMIs and ring resonators. For longer wavelengths SOS or SiPSi structures could be used. An important active device for long wavelength group IV photonics will be an optical modulator. We present relationships for the free-carrier induced electro-refraction and electro-absorption in silicon in the mid-infrared wavelength range. Electro-absorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electro-refraction modulation. We have examined the wavelength dependence of electro-refraction and electro-absorption, and found that the predictions suggest longer-wave modulator designs will in many cases be different than those used in the telecom range.

scholarly journals Ge-on-Si Photonics for Mid-infrared Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (48) ◽  
pp. 3269-3279
Author(s):  
K. Gallacher ◽  
L. Baldassarre ◽  
A. Samarelli ◽  
R. W. Millar ◽  
A. Ballabio ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hot Spots ◽  
Atmospheric Transmission ◽  
Mid Infrared ◽  
Infrared Sensing ◽  
Quantum Well Infrared Photodetectors ◽  
Si Photonics ◽  
Sensing Applications ◽  
Resonant Modes ◽  
Transmission Window

ABSTRACTThere is significant interest to develop cheap CMOS compatible sensors that operate in the mid-infrared (MIR). To meet these requirements, Ge-on-Si is proving to be an exciting platform. There is the potential to realize waveguide integrated quantum well infrared photodetectors (QWIPs) based on Ge quantum wells (QWs). Intersubband absorption from p-Ge QWs has been demonstrated in the important atmospheric transmission window of 8-13 μm. An alternative strategy for sensing in the MIR is demonstrated through highly n-type doped Ge plasmonic antennas. These antennas demonstrate vibrational sensing of polydimethylsiloxane (PDMS) spin coated layers at 12.5 μm wavelength. These demonstrate enhanced sensing capabilities due to the localized hot spots of the antenna resonant modes.

scholarly journals Non-Layered Gold-Silicon and All-Silicon Frequency-Selective Metasurfaces for Potential Mid-Infrared Sensing Applications

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5600 ◽  
Author(s):  
Octavian Dănilă ◽  
Doina Mănăilă-Maximean ◽  
Ana Bărar ◽  
Valery A. Loiko
Keyword(s):  
Spectral Window ◽  
Mid Infrared ◽  
Infrared Sensing ◽  
Sensing Applications ◽  
Technological Advances ◽  
Cell Element ◽  
Relative Coordinates ◽  
Infrared Spectral ◽  
Frequency Selective ◽  
Significant Resonance

We report simulations on the spectral behavior of non-layered gold-silicon and all-silicon frequency-selective metasurfaces in an asymmetric element configuration in the mid-infrared spectral window of 5–5.8 μm. The non-layered layout is experimentally feasible due to recent technological advances such as nano-imprint and nano-stencil lithography, and the spectral window was chosen due to the multitude of applications in sensing and imaging. The architecture exhibits significant resonance in the window of interest as well as extended tunability by means of variation of cell element sizes and relative coordinates. The results indicate that the proposed metasurface architecture is a viable candidate for mid-infrared absorbers, sensors and imaging systems.

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