Perfect planar antiphase-domain structures: a shift-lattice interpretation

1995 ◽  
Vol 210 (2) ◽  
pp. 81-87 ◽  
Author(s):  
R. J. D. Tilley ◽  
R. P. Williams
Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.


Author(s):  
H. Q. Ye ◽  
T.S. Xie ◽  
D. Li

The Ti3Al intermetallic compound has long been recognized as potentially useful structural materials. It offers attractive strength to weight and elastic modulus to weight ratios. Recent work has established that the addition of Nb to Ti3Al ductilized this compound. In this work the fundamental problem of this alloy, i.e. order-disorder and antiphase domain structures was investigated at the atomic scale.The Ti3Al+10at%Nb alloys used in this study were treated at 1060°C and then aged at 700°C for 2 hours. The specimens suitable for TEM were prepared by standard jet electrolytic-polishing technique. A JEM-200CX electron microscope with an interpretable resolution of about 0.25 nm was used for HREM.The [100] and [001] projections of the α2 phase were shown in Fig.l.The alloy obtained consist of at least two phases-α2(Ti3Al) and β0 structures. Moreover, a disorder α phase with small volume fraction was also observed. Fig.2 gives [100] and [001] diffraction patterns of the α2 phase. Since lattice parameters of the ordered α2 (a=0.579, c=0.466 nm) and disorder α phase (a0=0.294≈a/2, c0=0.468 nm) are almost the same, their diffraction patterns are difficult to be distinguished when they are overlapped with epitaxial orientation relationships.


1987 ◽  
Vol 94 ◽  
Author(s):  
Kenji Maruyama ◽  
Mitsuo Yoshikawa ◽  
Hiroshi Takigawa

ABSTRACTAntiphase domain (APD) structures have been discovered in CdTe layers grown on (0001) sapphire substrates by MOCVD. To explain APD formation, an obstruction model based on a surface-reaction mechanism has been proposed. The proportion of one-phase domains to the total area varies with the [DETe]/[DMCd] ratio (VI/II ratio). A single-domain CdTe layer can be obtained at a VI/II ratio of 5. The APD structure shows a strong correlation with the crystallinity measured by X-ray. For a single-domain CdTe epilayer, theFWHM of the X-ray rocking curve shows 114 arc seconds and the EPD is 6×10 cm−2


1985 ◽  
Vol 56 ◽  
Author(s):  
Y. Shinoda ◽  
Y. Ohmachi

AbstractHigh-quality single domain GaAs epitaxial layers were successfully grown on (100)Ge substrates. Growth was carried out using conventional metalorganic chemical vapor deposition at atmospheric pressure. Antiphase domain free GaAs epitaxial layers were obtained by thermal etching of the Ge surface just prior to growth. Mosaic surface morphology and antiphase boundaries characteristic of domain structures were completely absent in epi-layers following thermal etching. Photoluminescence revealed that domain free epi-layers exhibited characteristics comparable to those of GaAs homoepitaxial layers.


1981 ◽  
Vol 14 (6) ◽  
pp. 392-400 ◽  
Author(s):  
O. Terasaki ◽  
D. Watanabe ◽  
K. Hiraga ◽  
D. Shindo ◽  
M. Hirabayashi

Two-dimensional antiphase domain structures existing in the composition range 20–23 at.% Mn were investigated by a high-resolution structure-imaging technique with a 1 MV electron microscope. The structures are based on the DO 22 structure and consist of parallelogram-shaped domains containing 4 × 3 columns of Mn atoms and lozenge-shaped domains with 4 × 4 and 3 × 3 columns, and the domains are separated by two-dimensional antiphase boundaries parallel to the ({\bar 2}40) and (240) planes of the fundamental face-centred structure. The configuration of the domains changes delicately with a slight change of composition or annealing temperature, and the symmetry of the structure is lowered below about 670 K. The ideal structure models have compositions of about 22.7 at.% Mn. The images of about half of the specimen area of the 22.6 at.% Mn alloy annealed at 570 K do not correspond to these new structures, but bear a resemblance to the image expected from the two-dimensional antiphase structure proposed by Watanabe [J. Phys. Soc. Jpn (1960), 15, 1030–1040] for Au3Mn, which is based on the L12 structure and has boundaries parallel to the (100) and (010) planes.


1997 ◽  
Vol 12 (9) ◽  
pp. 2366-2373 ◽  
Author(s):  
K. Parlinski ◽  
Y. Kawazoe

A model of lead phosphate, which describes the rhombohedral-monoclinic phase transition, is used to form domain patterns in the annealing process. The obtained domain structures show W and W′ types of domain walls in agreement with the stress-free laws proposed in Sapriel's theory. The observed W domain walls are parallel to the ternary symmetry axis, while the W′ ones are tilted with respect to the same axis. The antiphase domain walls take no preferential orientations, and remain parallel to the ternary axis. The calculated density of the potential energy of the domain wall of type W is estimated to be Edw = 49 K/Å2 at T = 300 K.


1983 ◽  
Vol 21 ◽  
Author(s):  
O. Terasaki ◽  
G.J. Wood ◽  
D. Watanabe

ABSTRACTDark-field images of two-dimensional antiphase domain structures with stepped boundaries have been simulated for imaging conditions corresponding to some current high resolution electron microscopes. The simulations reveal that the positions of the dots in the dark-field images do not give a true representation of atomic structure; thus, in contrast to the brightfield superstructure images, it is very misleading to say that bright dots in the dark-field image correspond exactly to the positions of the minority atoms.


Sign in / Sign up

Export Citation Format

Share Document