Tailored Deposition by LPCVD of Non-stoichiometric Si Oxides and their Application in the Formation of Si Nanocrystals Embedded in SiO2 by Thermal Annealing

2007 ◽  
Vol 989 ◽  
Author(s):  
Bruno Morana ◽  
Juan Carlos G. de Sande ◽  
Andrés Rodríguez ◽  
Jesús Sangrador ◽  
Tomás Rodríguez ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Design Experiment ◽  
Si Nanocrystals ◽  
Pressure Chemical ◽  
Face Centered ◽  
Central Composite

AbstractSilicon oxide films with excess of Si were deposited by Low Pressure Chemical Vapor Deposition. The growth rate of the films and the excess of silicon in them have been modeled using a Face-centered Central Composite Design experiment. Samples annealed at 1100°C show luminescence (665 nm) at 80K and at room temperature associated to Si nanocrystals.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Low pressure chemical vapor deposition of B-N-C-H films from triethylamine borane complex

1995 ◽  
Vol 10 (2) ◽  
pp. 320-327 ◽  
Author(s):  
R.A. Levy ◽  
E. Mastromatteo ◽  
J.M. Grow ◽  
V. Paturi ◽  
W.P. Kuo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Apparent Activation Energy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Index Of Refraction ◽  
Arrhenius Behavior ◽  
Pressure Chemical

In this study, films consisting of B-N-C-H have been synthesized by low pressure chemical vapor deposition using the liquid precursor triethylamine borane complex (TEAB) both with and without ammonia. When no NH3 is present, the growth rate was observed to follow an Arrhenius behavior in the temperature range of 600 to 800 °C with an apparent activation energy of 11 kcal/mol. A linear dependence of growth rate is observed as a function of square root of flow rate for the TEAB range of 20 to 60 sccm, indicating that the reaction rate is controlled by the adsorption of borane. The addition of NH3 to TEAB had the effect of lowering the deposition temperature down to 300 °C and increasing the apparent activation energy to 22 kcal/mol. Above 650 °C, the carbon concentration of the deposits increased significantly, reflecting the breakup of the amine molecule. X-ray diffraction measurements indicated the films to be in all cases amorphous. Infrared spectra of the films showed absorption peaks representing the vibrational modes of B-N, B-N-B, B-H, and N-H. The index of refraction varied between 1.76 and 2.47, depending on composition of the films. Films deposited with no NH3 above 700 °C were seen to be compressive while films below that temperature were tensile. In the range of 350 to 475 °C, the addition of NH3 to TEAB resulted in films that were mildly tensile, while below 325 °C and above 550 °C, the films were found to be compressive. Both the hardness and Young's modulus of the films decreased with higher temperatures, reflecting the influence of the carbon presence.

Fabrication of Nanotwinned Surface on a Nickel Alloy Using a Developed Diamond Panel with Tips Array

2016 ◽  
Vol 874 ◽  
pp. 3-8
Author(s):  
Bo Wang ◽  
Zhen Yu Zhang ◽  
Neng Dong Duan ◽  
Ji Lei Lyu ◽  
Guo Xin Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Nickel Alloy ◽  
Vapor Deposition ◽  
Material Removal ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Chemical Reagents ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
High Temperature High Pressure

In this study, nanotwinned surface is fabricated on a Nickel alloy by means of a developed diamond panel with tips array. The diamond panel has an area of 10×10 mm2, and is grown using microwave chemical vapor deposition. The diamond tips are submicron in radius and formed on a silicon substrate with an array full of uniformed inverted pyramid pits. The nanotwinned surface is produced under the pressure of 1 MPa exerted by the diamond panel with tips array. Nanotwins are confirmed using transmission electron microscopy. The nanotwinned surface is generated by indention of diamond panel at room temperature using mechanical force, neither material removal nor chemical reagents. This is different from previous reports, in which high temperature, high pressure, chemical reagents or vacuum conditions are employed usually.

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