A Dnv point group structure possessing complete band gap based on gradual heterostructure and self-simulating sphere

2008 ◽  
Vol 93 (20) ◽  
pp. 201902 ◽  
Author(s):  
Tianrui Zhai ◽  
Zhaona Wang ◽  
Rongkuo Zhao ◽  
Jing Zhou ◽  
Dahe Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Group Structure ◽  
Point Group

scholarly journals How to determine the shape of nuclear molecules with polarized gamma-rays

2020 ◽  
Author(s):  
Lorenzo Fortunato
Keyword(s):  
Gamma Rays ◽  
Scattered Radiation ◽  
Group Structure ◽  
Point Group ◽  
Field Vector ◽  
Depolarization Ratio ◽  
Electric Field Vector ◽  
Initial Direction ◽  
Nuclear Molecules ◽  
Alpha Cluster

A method has been recently proposed to establish the geometry of the alpha-cluster arrangement in ^{12}12C making use of polarized gamma-rays. The ratio of intensities of scattered radiation at 90 degrees along and perpendicular to the initial direction of the electric field vector, called depolarization ratio, is a key quantity that allows to underpin the nature of totally symmetric modes of vibrations. This allows to connect with the underlying point-group structure and therefore to the geometric shape of the nuclear molecule. This method is reviewed for ^{12}12C and extended to other configurations, such as three unequal clusters and four identical clusters (e.g. ^{16}16O).

scholarly journals Orbits of crystallographic embedding of non-crystallographic groups and applications to virology

2015 ◽  
Vol 71 (6) ◽  
pp. 569-582 ◽  
Author(s):  
Reidun Twarock ◽  
Motiejus Valiunas ◽  
Emilio Zappa
Keyword(s):  
Dynamic Properties ◽  
Group Structure ◽  
Point Group ◽  
Theoretical Method ◽  
Lattice Points ◽  
Crystallographic Group ◽  
Icosahedral Symmetry ◽  
Point Sets ◽  
Finite Structures ◽  
Crystallographic Symmetry

The architecture of infinite structures with non-crystallographic symmetries can be modelledviaaperiodic tilings, but a systematic construction method for finite structures with non-crystallographic symmetry at different radial levels is still lacking. This paper presents a group theoretical method for the construction of finite nested point sets with non-crystallographic symmetry. Akin to the construction of quasicrystals, a non-crystallographic groupGis embedded into the point group {\cal P} of a higher-dimensional lattice and the chains of allG-containing subgroups are constructed. The orbits of lattice points under such subgroups are determined, and it is shown that their projection into a lower-dimensionalG-invariant subspace consists of nested point sets withG-symmetry at each radial level. The number of different radial levels is bounded by the index ofGin the subgroup of {\cal P}. In the case of icosahedral symmetry, all subgroup chains are determined explicitly and it is illustrated that these point sets in projection provide blueprints that approximate the organization of simple viral capsids, encoding information on the structural organization of capsid proteins and the genomic material collectively, based on two case studies. Contrary to the affine extensions previously introduced, these orbits endow virus architecture with an underlying finite group structure, which lends itself better to the modelling of dynamic properties than its infinite-dimensional counterpart.

scholarly journals Dispersion Diagram of Trigonal Piezoelectric Phononic Structures with Langasite Inclusions

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 491
Author(s):  
Edson Miranda ◽  
Clodualdo Aranas ◽  
Samuel Rodrigues ◽  
Hélio Silva ◽  
Gedeon Reis ◽  
...  
Keyword(s):  
Band Gap ◽  
Point Group ◽  
Bulk Wave ◽  
Filling Fraction ◽  
Dispersion Diagram ◽  
Bloch Waves ◽  
Trigonal Structure ◽  
Piezoelectric Coupling ◽  
Transducer Design ◽  
Acoustic Loss

The dispersion relation of elastic Bloch waves in 1-3 piezoelectric phononic structures (PPnSs) with Langasite (La3Ga5SiO14) inclusions in a polymeric matrix is reported. Langasite presents promising material properties, for instance good temperature behaviour, high piezoelectric coupling, low acoustic loss and high quality factor. Furthermore, Langasite belongs to the point group 32 and has a trigonal structure. Thus, the 2-D bulk wave propagation in periodic systems with Langasite inclusions cannot be decoupled into XY and Z modes. The improved plane wave expansion (IPWE) is used to obtain the dispersion diagram of the bulk Bloch waves in 1-3 PPnSs considering the classical elasticity theory and D3 symmetry. Full band gaps are obtained for a broad range of frequency. The piezoelectricity enhances significantly the band gap widths and opens up a narrow band gap in lower frequencies for a filling fraction of 0.5. This study should be useful for surface acoustic wave (SAW) filter and 1-3 piezocomposite transducer design using PPnSs with Langasite.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Crystal Structure Analysis of Cu-Zr Alloys by Convergent Beam Diffraction

1981 ◽  
Vol 39 ◽  
pp. 354-355
Author(s):  
A. F. Marshall ◽  
J. W. Steeds ◽  
D. Bouchet ◽  
S. L. Shinde ◽  
R. G. Walmsley
Keyword(s):  
Crystal Structure ◽  
Point Group ◽  
Intermetallic Phase ◽  
Three Dimensional ◽  
Crystal Structure Analysis ◽  
Ion Milling ◽  
Composition And Structure ◽  
Unit Cells ◽  
Sputter Deposited ◽  
Convergent Beam

Convergent beam electron diffraction is a powerful technique for determining the crystal structure of a material in TEM. In this paper we have applied it to the study of the intermetallic phases in the Cu-rich end of the Cu-Zr system. These phases are highly ordered. Their composition and structure has been previously studied by microprobe and x-ray diffraction with sometimes conflicting results.The crystalline phases were obtained by annealing amorphous sputter-deposited Cu-Zr. Specimens were thinned for TEM by ion milling and observed in a Philips EM 400. Due to the large unit cells involved, a small convergence angle of diffraction was used; however, the three-dimensional lattice and symmetry information of convergent beam microdiffraction patterns is still present. The results are as follows:1) 21 at% Zr in Cu: annealed at 500°C for 5 hours. An intermetallic phase, Cu3.6Zr (21.7% Zr), space group P6/m has been proposed near this composition (2). The major phase of our annealed material was hexagonal with a point group determined as 6/m.

Friedel'S law breakdown and interpretation of stacking fault images in tetrahedral semiconductors

1987 ◽  
Vol 45 ◽  
pp. 318-319
Author(s):  
Rob. W. Glaisher ◽  
A.E.C. Spargo
Keyword(s):  
Relative Phase ◽  
Point Group ◽  
Binary Compound ◽  
Stacking Fault ◽  
Fold Axis ◽  
Atom Pair ◽  
Tetrahedral Semiconductors ◽  
Group Symmetries ◽  
Thin Crystal ◽  
Phase Differences

Images of <11> oriented crystals with diamond structure (i.e. C,Si,Ge) are dominated by white spot contrast which, depending on thickness and defocus, can correspond to either atom-pair columns or tunnel sites. Olsen and Spence have demonstrated a method for identifying the correspondence which involves the assumed structure of a stacking fault and the preservation of point-group symmetries by correctly aligned and stigmated images. For an intrinsic stacking fault, a two-fold axis lies on a row of atoms (not tunnels) and the contrast (black/white) of the atoms is that of the {111} fringe containing the two-fold axis. The breakdown of Friedel's law renders this technique unsuitable for the related, but non-centrosymmetric binary compound sphalerite materials (e.g. GaAs, InP, CdTe). Under dynamical scattering conditions, Bijvoet related reflections (e.g. (111)/(111)) rapidly acquire relative phase differences deviating markedly from thin-crystal (kinematic) values, which alter the apparent location of the symmetry elements needed to identify the defect.

Symmetry breaking in convergent-beam diffraction

1989 ◽  
Vol 47 ◽  
pp. 480-481
Author(s):  
D.J. Eaglesham
Keyword(s):  
Symmetry Breaking ◽  
Point Group ◽  
X Ray Diffraction ◽  
Multiple Diffraction ◽  
Space Groups ◽  
Atomic Displacements ◽  
Small Probe ◽  
Phase Sensitive ◽  
Convergent Beam

Convergent Beam Electron Diffraction is now almost routinely used in the determination of the point- and space-groups of crystalline samples. In addition to its small-probe capability, CBED is also postulated to be more sensitive than X-ray diffraction in determining crystal symmetries. Multiple diffraction is phase-sensitive, so that the distinction between centro- and non-centro-symmetric space groups should be trivial in CBED: in addition, the stronger scattering of electrons may give a general increase in sensitivity to small atomic displacements. However, the sensitivity of CBED symmetry to the crystal point group has rarely been quantified, and CBED is also subject to symmetry-breaking due to local strains and inhomogeneities. The purpose of this paper is to classify the various types of symmetry-breaking, present calculations of the sensitivity, and illustrate symmetry-breaking by surface strains.CBED symmetry determinations usually proceed by determining the diffraction group along various zone axes, and hence finding the point group. The diffraction group can be found using either the intensity distribution in the discs

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

TEM study of lanthanum aluminate

1990 ◽  
Vol 48 (4) ◽  
pp. 1060-1061
Author(s):  
C.Y. Yang ◽  
Z.R. Huang ◽  
Y.Q. Zhou ◽  
C.Z. Li ◽  
W.H. Yang ◽  
...  
Keyword(s):  
Domain Boundary ◽  
Point Group ◽  
Optical Microscope ◽  
Dark Field ◽  
Zone Axis ◽  
Superconducting Film ◽  
Ion Milling ◽  
Lanthanum Aluminate ◽  
Ring Diameter ◽  
Diffraction Patterns

Lanthanum aluminate(LaAlO3) single crystal as a substrate for high Tc superconducting film has attracted attention recently. We report here a transmission electron microscopy(TEM) study of the crystal structure and phase transformation of LaAlO3 by using Philips EM420 and EM430 microscopes. Single crystals of LaAlO3 were investigated first by optical microscope. Stripe-shaped domains of mm size are clearly seen(Fig.1a), and 90° domain boundary is also obvious. TEM specimens were prepared by mechanical grinding and polishing followed by ion-milling.Fig.lb shows μm size stripe domains of LaAlO3. Convergent beam electron diffraction patterns (CBED) from single domain were taken.Fig. 2a and Fig. 2c are [001] zone axis patterns which show a 4mm symmetry, and the (200) dark field of this zone axis gives 2mm symmetry(fig.2b). Therefore the point group of this crystal is either 4/mmm or m3m. The projection of the first order Laue zone(FOLZ) reflections on zero layer (fig. 2c) shows that the unit cell is face centered. A tetragonal unit ceil is chosen, with a=0.532nm and c=0.753nm, c being determined from the FOLZ ring diameter.

Microdiffraction analysis of precipitate crystallography and morphology in Al alloys

1990 ◽  
Vol 48 (4) ◽  
pp. 954-955
Author(s):  
B.C. Muddle ◽  
G.R. Hugo
Keyword(s):  
Point Group ◽  
Hexagonal Lattice ◽  
Intersection Point ◽  
Saed Pattern ◽  
Point Symmetry ◽  
Hexagonal Symmetry ◽  
Precipitate Crystal ◽  
The Matrix ◽  
The Subject ◽  
Electron Microdiffraction

Electron microdiffraction has been used to determine the crystallography of precipitation in Al-Cu-Mg-Ag and Al-Ge alloys for individual precipitates with dimensions down to 10 nm. The crystallography has been related to the morphology of the precipitates using an analysis based on the intersection point symmetry. This analysis requires that the precipitate form be consistent with the intersection point group, defined as those point symmetry elements common to precipitate and matrix crystals when the precipitate crystal is in its observed orientation relationship with the matrix.In Al-Cu-Mg-Ag alloys with high Cu:Mg ratios and containing trace amounts of silver, a phase designated Ω readily precipitates as thin, hexagonal-shaped plates on matrix {111}α planes. Examples of these precipitates are shown in Fig. 1. The structure of this phase has been the subject of some controversy. An SAED pattern, Fig. 2, recorded from matrix and precipitates parallel to a <11l>α axis is suggestive of hexagonal symmetry and a hexagonal lattice has been proposed on the basis of such patterns.

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