Characterization ofa‐SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x‐ray mask application

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

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Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

Journal of Materials Science Research ◽

10.5539/jmsr.v5n2p56 ◽

2016 ◽

Vol 5 (2) ◽

pp. 56

Author(s):

Keiji Komatsu ◽

Pineda Marulanda David Alonso ◽

Nozomi Kobayashi ◽

Ikumi Toda ◽

Shigeo Ohshio ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Single Crystal ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Reciprocal Lattice ◽

Chemical Vapor ◽

X Ray ◽

Pole Figures ◽

Out Of Plane ◽

Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

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Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

MRS Proceedings ◽

10.1557/proc-406-133 ◽

1995 ◽

Vol 406 ◽

Author(s):

M. S. Gaffneyt ◽

C. M. Reavesl ◽

A. L Holmes ◽

R. S. Smith ◽

S. P. DenBaars

Keyword(s):

Chemical Vapor Deposition ◽

Real Time ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Normal Operation ◽

Growth Monitoring ◽

X Ray Diffraction ◽

X Ray ◽

Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

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Chemical Vapor Deposition of Strontium-Barium-Niobate

MRS Proceedings ◽

10.1557/proc-243-457 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 6

Author(s):

A. Greenwald ◽

M. Horenstein ◽

M. Ruane ◽

W. Clouser ◽

J. Foresi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Strontium Barium Niobate ◽

Electrical And Optical Properties ◽

Strontium Barium ◽

X Ray ◽

Boston University

AbstractSpire Corporation has deposited strontium-barium-niobate by chemical vapor deposition at atmospheric pressure using Ba(TMHD), Sr(TMHD), and Nb ethoxide. Deposition temperature as 550°C in an isothermal furnace. Films were deposited upon silicon (precoated with silica), platinum, sapphire, and quartz. Materials were characterized by RBS, X-ray diffraction, EDS, electron, and optical microscopy. Electrical and optical properties were measured at Boston University.

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Growth of Epitaxial BaTiO3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-361-355 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 6

Author(s):

D.L. Kaiser ◽

M.D. Vaudin ◽

L.D. Rotter ◽

Z.L. Wang ◽

J.P. Cline ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electron Diffraction ◽

Harmonic Generation ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Second Harmonic ◽

Chemical Vapor ◽

X Ray ◽

Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.

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