scholarly journals In situ nanomechanical testing in focused ion beam and scanning electron microscopes

2011 ◽  
Vol 82 (6) ◽  
pp. 063901 ◽  
Author(s):  
D. S. Gianola ◽  
A. Sedlmayr ◽  
R. Mönig ◽  
C. A. Volkert ◽  
R. C. Major ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Nanomechanical Testing ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging

2008 ◽  
Author(s):  
R.J. Young ◽  
A. Buxbaum ◽  
B. Peterson ◽  
R. Schampers
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Preparation Techniques

Abstract Scanning transmission electron microscopy with scanning electron microscopes (SEM-STEM) has become increasing used in both SEM and dual-beam focused ion beam (FIB)-SEM systems. This paper describes modeling undertaken to simulate the contrast seen in such images. Such modeling provides the ability to help understand and optimize imaging conditions and also support improved sample preparation techniques.

scholarly journals TEM Sample Preparation Using Focused Ion Beam - Capabilities And Limits

2003 ◽  
Vol 11 (2) ◽  
pp. 22-25 ◽  
Author(s):  
H.J. Engelmann ◽  
B. Volkmann ◽  
Y. Ritz ◽  
H. Saage ◽  
H Stegmann ◽  
...  
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Handling ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Preparation Techniques ◽  
Scanning Electron

TEM sample preparation using Focused Ion Beam (FIB) methods becomes more and more interesting for microscopists because the technique allows for reliable and very efficient sample preparation. The first application of TEM sample preparation by FIB-cutting was reported more than 10 years ago. Meanwhile, a lot of experience has been gathered that allows one to discuss the capabilities and limits of the FIB technique in detail.Several TEM sample preparation techniques are known that all include FIB-cutting but differ in sample pre-preparation, sample handling,etc. This paper focuses on the actual FIB process, FIB tools are closely related to Scanning Electron Microscopes, but instead of an electron beam an ion beam (mostly Ga+ions) is used to remove and deposit material.

Nanomechanical Characterization in the FIB

2005 ◽  
Author(s):  
Thomas M. Moore
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Materials Characterization ◽  
Depth Of Focus ◽  
Ion Milling ◽  
Nano Technology ◽  
Physical Behavior ◽  
Nanomechanical Testing ◽  
Load Cells ◽  
Scanning Electron

Abstract The availability of the focused ion beam (FIB) microscope with its excellent imaging resolution, depth of focus and ion milling capability has made it an appealing platform for materials characterization at the sub-micron, or "nano" level. This article focuses on nanomechanical characterization in the FIB, which is an extension of the FIB capabilities into the realm of nano-technology. It presents examples that demonstrate the power and flexibility of nanomechanical testing in the FIB or scanning electron microscope with a probe shaft that includes a built-in strain gauge. Loads that range from grams to micrograms are achievable. Calibration is limited only by the availability of calibrated load cells in the smallest load ranges. Deflections in the range of a few nanometers range can be accurately applied. Simultaneous electrical, mechanical, and visual data can be combined to provide a revealing study of physical behavior of complex and dynamic nanostructures.

Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Novel Technique ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time ◽  
Scanning Electron

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

scholarly journals A Novel Two-Axis Load Sensor Designed for in Situ Scratch Testing inside Scanning Electron Microscopes

Sensors ◽  
2013 ◽  
Vol 13 (2) ◽  
pp. 2552-2565 ◽  
Author(s):  
Hu Huang ◽  
Hongwei Zhao ◽  
Boda Wu ◽  
Shunguang Wan ◽  
Chengli Shi
Keyword(s):  
Scratch Testing ◽  
Load Sensor ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

scholarly journals Computer-Controlled Polishing System For Preparing Multiple Pre-FIB TEM Specimens

2007 ◽  
Vol 15 (6) ◽  
pp. 38-39
Author(s):  
D. J. MacMahon ◽  
E. Raz-Moyal
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Product Yield ◽  
Interface Layer ◽  
Ex Situ ◽  
Advantages And Disadvantages ◽  
Transmission Electron ◽  
Invaluable Tool ◽  
Electron Microscopes

Semiconductor manufacturers are increasingly turning to Transmission Electron Microscopes (TEMs) to monitor product yield and process control, analyze defects, and investigate interface layer morphology. To prepare TEM specimens, Focused Ion Beam (FIB) technology is an invaluable tool, yielding a standard milled TEM lamella approximately 15 μm wide, 5 μm deep and ~100 nm thick. Several techniques have been developed to extract these tiny objects from a large wafer and view it in the TEM. These techniques, including ex-situ lift-out, H-bar, and in-situ lift-out, have different advantages and disadvantages, but all require painstaking preparation of one specimen at a time.

Focused Ion Beam Metrology

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Wagner ◽  
P. Blauner ◽  
P. Longo ◽  
S. Cohen
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dimensional Change ◽  
Critical Dimension ◽  
Ion Beams ◽  
Near Surface ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

AbstractFocused Ion Beams offer a new method of measuring the size of polymer resist features on integrated circuits. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension (CD) metrology. By confining the polymer damage to the very near surface, ion beams can induce less dimensional change than scanning electron microscopes during the measurement process. This can result in improved CD measurement precision. The erosion rate of polymers to various ion species is also presented, and we show that erosion is non-linear with ion dose. The use of FIB for forming resist cross sections is also demonstrated. An H20 gas assisted etching process for polymers has been developed, and is shown to significantly improve the quality of resist cross sections.

Conceptualizing a dual porosity occurrence in sandstones by utilizing various laboratory methods

2021 ◽  
pp. 6-16
Author(s):  
D.S. Urakov ◽  
◽  
S.S. Rahman ◽  
S. Tyson ◽  
M. Jami ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ct Images ◽  
Effective Porosity ◽  
Dual Porosity ◽  
Hydrocarbon Production ◽  
Brunei Darussalam ◽  
Electron Microscopes ◽  
Mercury Injection Capillary Pressure ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Dual porosity in sandstones is considered as a key parameter that controls hydrocarbon production. Understanding of distribution of secondary pores, might give some insights about the heterogeneity of the reservoir for a particular area and as a result can help to produce more oil applying more efficient well-planning and design techniques. The studied oilfield is located about 40 km offshore Brunei Darussalam. In order to find out mechanisms that could lead to the development of secondary pores number of studies was conducted including helium porosity measurements, Mercury Injection Capillary Pressure, Micro-CT images (µ-CT images), X-Ray Diffraction, Petrography analysis, Scanning Electron Microscopy with Energy Dispersive Spectroscopy and Focus Ion Beam Scanning Electron Microscopes. The results showed that effective porosity that was formed by secondary pores was caused by the erosion, fracturing, and dissolution of sedimentary grains, authigenic minerals that are a part of pore-filling cement, and authigenic replacive minerals.

scholarly journals Low Vacuum SEMs: Latest Generation Technologies and Applications

2007 ◽  
Vol 15 (4) ◽  
pp. 20-25
Author(s):  
William Neijssen ◽  
Ben Lich ◽  
Pete Carleson
Keyword(s):  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
High Vacuum ◽  
Ease Of Use ◽  
Wide Range ◽  
Sample Chamber ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Backscatter Diffraction

Since becoming popular more than a decade ago, low vacuum scanning electron microscopes (SEM) have continued to evolve. The latest systems offer uncompromised performance over an unprecedented range of sample chamber vacuum conditions. Instruments are now available that provide near-nanometer resolution in all vacuum modes and the ability to operate at pressures as high as 4000 Pascals (~30 Torr). Low vacuum operation eliminates much of the sample preparation required for conventional (high vacuum) SEM. Insulating samples can be imaged without conductive coatings. Wet, dirty, outgassing samples can be examined without drying and fixing. Systems can also be configured with a wide range of ancillary capabilities for imaging, analysis, and sample manipulation, including advanced secondary, backscattered, and transmitted electron detection, X-ray spectrometry, electron backscatter diffraction, and focused ion beam (FIB) manipulation. The current generation of systems combine speed, flexibility, repeatability, and ease of use, making them the ideal solution for any laboratory that must satisfy a wide range of imaging and analytical demands.

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