Nanomechanical Characterization in the FIB

2005 ◽  
Author(s):  
Thomas M. Moore
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Materials Characterization ◽  
Depth Of Focus ◽  
Ion Milling ◽  
Nano Technology ◽  
Physical Behavior ◽  
Nanomechanical Testing ◽  
Load Cells ◽  
Scanning Electron

Abstract The availability of the focused ion beam (FIB) microscope with its excellent imaging resolution, depth of focus and ion milling capability has made it an appealing platform for materials characterization at the sub-micron, or "nano" level. This article focuses on nanomechanical characterization in the FIB, which is an extension of the FIB capabilities into the realm of nano-technology. It presents examples that demonstrate the power and flexibility of nanomechanical testing in the FIB or scanning electron microscope with a probe shaft that includes a built-in strain gauge. Loads that range from grams to micrograms are achievable. Calibration is limited only by the availability of calibrated load cells in the smallest load ranges. Deflections in the range of a few nanometers range can be accurately applied. Simultaneous electrical, mechanical, and visual data can be combined to provide a revealing study of physical behavior of complex and dynamic nanostructures.

Three-Dimensional Microstructural Characterization Using Focused Ion Beam Tomography

MRS Bulletin ◽  
2007 ◽  
Vol 32 (5) ◽  
pp. 408-416 ◽  
Author(s):  
Michael D. Uchic ◽  
Lorenz Holzer ◽  
Beverley J. Inkson ◽  
Edward L. Principe ◽  
Paul Munroe
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Microstructural Characterization ◽  
Materials Characterization ◽  
Experimental Methodology ◽  
Ion Milling ◽  
Current State ◽  
Recent Developments ◽  
Focused Ion Beam Tomography

AbstractThis article reviews recent developments and applications of focused ion beam (FIB) microscopes for three-dimensional (3D) materials characterization at the microscale through destructive serial sectioning experiments. Precise ion milling—in combination with electron-optic—based imaging and surface analysis methods—can be used to iteratively section through metals, ceramics, polymers, and electronic or biological materials to reveal the true size, shape, and distribution of microstructural features. Importantly, FIB tomographic experiments cover a critical size-scale gap that cannot be obtained with other instrumentation. The experiments encompass material volumes that are typically larger than 1000 μm3, with voxel dimensions approaching tens of nanometers, and can contain structural, chemical, and crystallographic information. This article describes the current state of the art of this experimental methodology and provides examples of specific applications to 3D materials characterization.

scholarly journals Focused ion beam and scanning electron microscopy for 3D materials characterization

MRS Bulletin ◽  
2014 ◽  
Vol 39 (4) ◽  
pp. 361-365 ◽  
Author(s):  
Paul G. Kotula ◽  
Gregory S. Rohrer ◽  
Michael P. Marsh
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Materials Characterization ◽  
Image Position ◽  
Scanning Electron

Abstract

scholarly journals In situ nanomechanical testing in focused ion beam and scanning electron microscopes

2011 ◽  
Vol 82 (6) ◽  
pp. 063901 ◽  
Author(s):  
D. S. Gianola ◽  
A. Sedlmayr ◽  
R. Mönig ◽  
C. A. Volkert ◽  
R. C. Major ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Nanomechanical Testing ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

Degradation of a Metal–Polymer Interface Observed by Element-Specific Focused Ion Beam-Scanning Electron Microscopy

Langmuir ◽  
2020 ◽  
Vol 36 (11) ◽  
pp. 2816-2822 ◽  
Author(s):  
Takashi Kakubo ◽  
Katsunori Shimizu ◽  
Akemi Kumagai ◽  
Hiroaki Matsumoto ◽  
Miki Tsuchiya ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Scanning ◽  
Polymer Interface ◽  
Metal Polymer ◽  
Scanning Electron
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