Redistribution of the voltage in a metal-silicon nitride-silicon dioxide-silicon structure under the influence of laser radiation

In this paper, we report a method of fabricating silicon nano-wire based on thermal oxidation technique. In this method, we first fabricate a wider structure with traditional lithography, and then use a layer of silicon nitride as mask to oxidize silicon. At the same time, due to the lateral diffusion and oxidation of oxidant, silicon is consumed by oxidant and the width of the silicon structure will be reduced to nano range when we remove the silicon dioxide. The factors affecting the ratio of vertical and lateral oxidation, for example, the gentle slope caused by isotropic oxidation and the inhomogeneity of the sidewall of silicon nano-wire, are discussed at last. Our results should be useful in generating silicon–based nanospintronics devices with careful selection of the oxide parameters.

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Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽

10.3390/mi12020136 ◽

2021 ◽

Vol 12 (2) ◽

pp. 136

Author(s):

Yiingqi Shang ◽

Hongquan Zhang ◽

Yan Zhang

Keyword(s):

Silicon Nitride ◽

Silicon Dioxide ◽

Chemical Vapor ◽

Nitride Layer ◽

Wet Etching ◽

Silicon Dioxide Layer ◽

Etching Depth ◽

Deep Cavity ◽

Mask Layer ◽

Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

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Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

Applied Physics Letters ◽

10.1063/1.114371 ◽

1995 ◽

Vol 67 (13) ◽

pp. 1902-1904 ◽

Cited By ~ 3

Author(s):

J. Staffa ◽

D. Hwang ◽

B. Luther ◽

J. Ruzyllo ◽

R. Grant

Keyword(s):

Silicon Nitride ◽

Silicon Dioxide ◽

Temperature Dependence ◽

Etch Rate ◽

Remote Plasma

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Reaction ergodography for silicon nitride bond formation by the nitridation of silicon dioxide

The Journal of Physical Chemistry ◽

10.1021/j100186a046 ◽

1992 ◽

Vol 96 (7) ◽

pp. 3029-3033 ◽

Cited By ~ 4

Author(s):

Akitomo Tachibana ◽

Yuzuru Kurosaki ◽

Hiroyuki Fueno ◽

Toshiaki Sera ◽

Tokio Yamabe

Keyword(s):

Silicon Nitride ◽

Silicon Dioxide ◽

Bond Formation

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Simulation of Proton Beam Effects in Thin Insulating Films

International Journal of Photoenergy ◽

10.1155/2013/128410 ◽

2013 ◽

Vol 2013 ◽

pp. 1-9 ◽

Cited By ~ 1

Author(s):

Ljubinko Timotijevic ◽

Irfan Fetahovic ◽

Djordje Lazarevic ◽

Milos Vujisic

Keyword(s):

Monte Carlo ◽

Silicon Nitride ◽

Integrated Circuits ◽

Silicon Dioxide ◽

Monte Carlo Simulations ◽

Proton Energy ◽

Transport Parameters ◽

Insulating Layer ◽

Insulating Films ◽

Ultrathin Layers

Effects of exposing several insulators, commonly used for various purposes in integrated circuits, to beams of protons have been investigated. Materials considered include silicon dioxide, silicon nitride, aluminium nitride, alumina, and polycarbonate (Lexan). The passage of proton beams through ultrathin layers of these materials has been modeled by Monte Carlo simulations of particle transport. Parameters that have been varied in simulations include proton energy and insulating layer thickness. Materials are compared according to both ionizing and nonionizing effects produced by the passage of protons.

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