SCLC theory for a Gaussian trap distribution

1973 ◽  
Vol 26 (5) ◽  
pp. 927 ◽  
Author(s):  
J Bonham
Keyword(s):  
Activation Energy ◽  
Trap Level ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Carrier Space ◽  
Exponential Trap Distribution ◽  
Conduction Theory ◽  
Applied Fields ◽  
Current Voltage Relation ◽  
Limited Conduction

A simplified one-carrier space charge limited conduction theory has been developed for a Gaussian trap distribution in. an insulator. It is shown that the distribution behaves much like a discrete trap level at low applied fields, although the current has a temperature dependent activation energy. At higher fields the current-voltage relation becomes superquadratic, but this does not account for the behaviour normally attributed to an exponential trap distribution.

Defects Study by Activation Energy Profile for Lowering Leakage Current in P-N Junction

2011 ◽  
Vol 695 ◽  
pp. 569-572 ◽  
Author(s):  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Poopol Rujanapich ◽  
Narin Atiwongsangthong ◽  
Surasak Niemcharoen ◽  
...  
Keyword(s):  
Activation Energy ◽  
Leakage Current ◽  
Volume Diffusion ◽  
Defect Density ◽  
Arrhenius Plot ◽  
Temperature Dependent ◽  
Residual Defect ◽  
Current Voltage ◽  
Depletion Width ◽  
Capacitance Voltage

Diode leakage current consists of diffusion (Id) and generation current (Ig), which is strongly sensitive to the residual defect density. These defects can be studied by activation energy (Ea). Therefore, this paper presents a method for calculating activation energy of silicon p-n junctions from volume generation current. It combines temperature-dependent current–voltage (I –V) and capacitance–voltage (C-V) measurements of diodes. The Igcan be found from the volume leakage current by subtraction of the volume diffusion current, which is calculated while the depletion width is zero. The activation energy (Ea) is derived from slope of an Arrhenius plot of Ig. To derive the correct slope the temperature dependence of the depletion width, which is obtained from the corrected volume capacitance has been applied. The Ea profile below junction has been shown. The lower Ea value has been found near the junction, which may relate to the junction implantation.

Electrical Characterization of Isotype n-ZnO/n-GaN Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Sena Akarca-Biyikli ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
...  
Keyword(s):  
Activation Energy ◽  
Forward Bias ◽  
Rf Sputtering ◽  
Electrical Characterization ◽  
Vapour Phase ◽  
Zno Films ◽  
Temperature Dependent ◽  
Vapour Phase Epitaxy ◽  
Current Path ◽  
Current Voltage

ABSTRACTElectrical properties of n-ZnO/n-GaN isotype heterostructures obtained by rf-sputtering of ZnO films on GaN layers grown by metal-organic vapour phase epitaxy are discussed. Current-voltage (I-V) characteristics of the n-ZnO/n-GaN diodes revealed highly rectifying behavior with forward and reverse currents ∼1.43×10-2 A/cm2 and ∼2.4×10-4 A/cm2, respectively, at ±5 V. From the Arrhenius plot built using temperature dependent current-voltage characteristics (I-V-T) an activation energy 0.125 eV was derived for the reverse bias leakage current path, and 0.62 eV for the band offset from forward bias measurements. From electron-beam induced current measurements the minority carrier diffusion length in ZnO was estimated in the range 0.125-0.175 mm, depending on excitation conditions. The temperature dependent EBIC measurements yielded an activation energy of 0.462 ± 0.073 V.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 735
Author(s):  
Fortunato Pezzimenti ◽  
Hichem Bencherif ◽  
Giuseppe De Martino ◽  
Lakhdar Dehimi ◽  
Riccardo Carotenuto ◽  
...  
Keyword(s):  
Drain Current ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Wide Range ◽  
Temperature Ranges ◽  
Joint Contribution ◽  
State Resistance

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

Temperature-dependent activation energy and variable range hopping in semi-insulating GaAs

2006 ◽  
Vol 21 (12) ◽  
pp. 1681-1685 ◽  
Author(s):  
R M Rubinger ◽  
G M Ribeiro ◽  
A G de Oliveira ◽  
H A Albuquerque ◽  
R L da Silva ◽  
...  
Keyword(s):  
Activation Energy ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Variable Range

Current‐voltage relation in a time‐dependent diode

1985 ◽  
Vol 47 (2) ◽  
pp. 115-117 ◽  
Author(s):  
Abraham Kadish ◽  
William Peter ◽  
Michael E. Jones
Keyword(s):  
Time Dependent ◽  
Current Voltage ◽  
Current Voltage Relation

Hydrogenation of methylacetylene. III. The reaction of methylacetylene with hydrogen catalyzed by nickel, copper, and their alloys

1968 ◽  
Vol 46 (4) ◽  
pp. 623-633 ◽  
Author(s):  
R. S. Mann ◽  
K. C. Khulbe
Keyword(s):  
Activation Energy ◽  
Nickel Catalyst ◽  
Hydrogen Pressure ◽  
Constant Volume ◽  
Temperature Dependent ◽  
Nickel Copper ◽  
Wide Range ◽  
Initial Hydrogen Pressure

The reaction between methylacetylene and hydrogen over unsupported nickel, copper, and their alloys has been investigated in a static constant volume system between 20 and 220 °C for a wide range of reactant ratios. The order of reaction with respect to hydrogen was one and nearly independent of temperature. While the order of reaction with respect to methylacetylene over nickel catalyst was slightly negative and temperature dependent, it was always positive and nearly independent of temperature for copper and copper-rich alloys. Selectivity was independent of initial hydrogen pressure for nickel and copper only; for others it decreased rapidly with increasing hydrogen pressure. The overall activation energy varied between 9 and 21.2 kcal/g mole. Selectivity and extent of polymerization increased with increasing amount of copper in the alloy.

Magnetic properties of undoped and Co-doped n-type β–FeSi2.5 single crystals

2002 ◽  
Vol 17 (11) ◽  
pp. 2960-2965 ◽  
Author(s):  
E. Arushanov ◽  
L. Ivanenko ◽  
D. Eckert ◽  
G. Behr ◽  
U. K. Rößler ◽  
...  
Keyword(s):  
Activation Energy ◽  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
External Field ◽  
Single Crystals ◽  
Spin Glasses ◽  
Paramagnetic Centers ◽  
Temperature Dependent ◽  
Paramagnetic Curie Temperature ◽  
Co Doped

Results of magnetization and magnetic susceptibility measurements on undoped and Co-doped FeSi2.5 single crystals are presented. The temperature dependence of the magnetic susceptibility of the Co-doped sample in the range of 5–300 K can be explained by temperature-dependent contributions due to paramagnetic centers and the carriers excited thermally in the extrinsic conductivity region. The values of the paramagnetic Curie temperature and activation energy of the donor levels were estimated. It is also shown that the magnetic susceptibility of Co-doped samples cooled in zero external field and in a field are different. This resembles the properties of spin-glasses and indicates the presence of coupling between magnetic centers.

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