scholarly journals High thermoelectricpower factor in graphene/hBN devices

2016 ◽  
Vol 113 (50) ◽  
pp. 14272-14276 ◽  
Author(s):  
Junxi Duan ◽  
Xiaoming Wang ◽  
Xinyuan Lai ◽  
Guohong Li ◽  
Kenji Watanabe ◽  
...  

Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. Although passive cooling in graphene-based devices is quite effective due to graphene’s extraordinary heat conduction, active cooling has not been considered feasible due to graphene’s low thermoelectric power factor. Here, we show that the thermoelectric performance of graphene can be significantly improved by using hexagonal boron nitride (hBN) substrates instead of SiO2. We find the room temperature efficiency of active cooling in the device, as gauged by the power factor times temperature, reaches values as high as 10.35 W⋅m−1⋅K−1, corresponding to more than doubling the highest reported room temperature bulk power factors, 5 W⋅m−1⋅K−1, in YbAl3, and quadrupling the best 2D power factor, 2.5 W⋅m−1⋅K−1, in MoS2. We further show that the Seebeck coefficient provides a direct measure of substrate-induced random potential fluctuations and that their significant reduction for hBN substrates enables fast gate-controlled switching of the Seebeck coefficient polarity for applications in integrated active cooling devices.

2019 ◽  
Vol 19 (11) ◽  
pp. 7452-7455
Author(s):  
Ashkan Vakilipour Takaloo ◽  
Hatef Sadeghi

Recent experimental indications of room-temperature quantum interference in the sub-nanometer single molecules suggest that such effects could be utilized to engineer thermoelectric properties of organic single molecule junctions. In this paper, we show that the thermoelectric power factor is significantly enhanced in double path ferrocene cycles compared to the single path counterpart. Due to quantum interference in the double path structure, the Seebeck coefficient is significantly enhanced while the conductance is less affected compared to single path structure. The power factor of the ferrocene cycles are 1–2 orders of magnitude higher than the best organic material reported today. This opens new avenues for future molecular scale organometallic thermoelectricity.


2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.


2005 ◽  
Vol 886 ◽  
Author(s):  
Julio E. Rodriguez

ABSTRACTMeasurements of Seebeck coefficient, S(T) and electrical resistivity, ρ(T) on polycrystalline La2−xSrxCuO4+d(LSCO) (0<x≤0.2) samples are reported. The Seebeck coefficient is positive in whole measured temperature range (77K and 300K) and it decreases with Sr content. At room temperature S(T) changes from 400 μ/K for the samples with the lowest levels of Sr to 30 μV/K for the samples with the highest Sr levels. The behavior of S(T) fits to Heikes model, which describes the behavior of Seebeck coefficient in systems where the correlated hopping is present. With the Sr content, the electrical resistivity changes its behavior from semiconducting to metallic and it took values from 2.4 to 10−3Ωcm. From S(T) and rho(T) measurements the thermoelectric power factor, PF was obtained. The maximum values for PF were about 5 μW/K2cm in the samples where x= 0.03, which are comparable to the typical values for conventional thermoelectric semiconductors. The structural and morphological properties of the samples were studied by x-ray diffraction analysis and Scanning Electron Microscopy (SEM) respectively. The behavior of transport properties opens de possibility of considering this family of perovskite-compounds as a thermoelectric material which works below room temperature.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.


RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1593-1599 ◽  
Author(s):  
Jonna Hynynen ◽  
David Kiefer ◽  
Christian Müller

The crystallinity of P3HT strongly benefits the electrical conductivity but not Seebeck coefficient, leading to an increase in power factor by one order of magnitude.


2009 ◽  
Vol 1166 ◽  
Author(s):  
Julio E. Rodríguez ◽  
J. A. Niño

AbstractThermoelectric properties of polycrystalline La0.75Sr0.25Co1-xMnxO3-δ(0<x<0.08) (LSCoO-Mn) compounds have been studied. The samples were grown by solid-state reaction method; their transport properties were studied in the temperature range between 100 and 290K, as a function of temperature and the manganese content. The Seebeck coefficient (S) is positive over the measured temperature range and its magnitude increases with the manganese content up to values close to 160 μV/K. The electrical resistivity (ρ) goes from metallic to semiconducting behavior as the Mn level increases, at room temperature, ρ(T) exhibit values less than 4mΩ-cm. From S(T), ρ(T) and κ(T) data, the thermoelectric power factor and the figure of merit were determined. These performance parameters reach maximum values around 18 μW/K2-cm and 0.2, respectively. The observed behavior in the transport properties become these compounds potential thermoelectric materials, which could be used in thermoelectric applications.


RSC Advances ◽  
2017 ◽  
Vol 7 (33) ◽  
pp. 20336-20344 ◽  
Author(s):  
Suchitra Yadav ◽  
Brajesh S. Yadav ◽  
Sujeet Chaudhary ◽  
Dinesh K. Pandya

Deposition potential controlled evolution of (420) textured CoSb3 phase and micro structure correlated to enhancement in near room temperature thermoelectric power-factor.


2005 ◽  
Vol 871 ◽  
Author(s):  
Isabelle Lévesque ◽  
Xing Gao ◽  
Christopher I. Ratcliffe ◽  
Dennis D. Klug ◽  
John S. Tse ◽  
...  

AbstractNovel poly(3,6-hexyl-2,7-N-octylcarbazole) derivatives and poly(diindolocarbazole)s were synthesized. Optical, electrochemical, electrical and thermoelectric properties were investigated. Band structure calculations were used to predict which polymers were promising as thermoelectric materials. The best combination of Seebeck coefficient and conductivity (power factor) was 9,4 x10-8 Wm-1K-2 with a copolymer of carbazole and thiophene. This corresponds to a ZT at room temperature of 0.0003. Optimization of the polymer structure and doping level should lead to an increased ZT.


2015 ◽  
Vol 3 (40) ◽  
pp. 10451-10458 ◽  
Author(s):  
S. R. Bauers ◽  
D. R. Merrill ◽  
D. B. Moore ◽  
D. C. Johnson

Synthesis and electrical properties of kinetically stabilized (PbSe)1+δ(TiSe2)n thin-film intergrowths are reported for 1 ≤ n ≤ 18. The carriers donated to the TiSe2 from PbSe are diluted with increasing n, leading to a systematic increase in the Seebeck coefficient and thermoelectric power factor.


2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  

ABSTRACTWe report the electrical resistivity and the Seebeck coefficient of AZn13(A = Sr, Ba, and La) and LaCo13measured over a wide temperature range and their thermal conductivity measured at room temperature. The electrical measurements of AZn13and LaCo13above room temperature reveal that the compounds show good metallic behavior. We find that the absolute value of Seebeck coefficient for AZn13(A = Sr, Ba, and La) increases with increasing temperature, which is a typical metallic behavior and the absolute value is less than 3μVK−1at room temperature. Accordingly, the power factor of AZn13is quite low. Temperature dependence of the Seebeck coefficient for LaCo13is similar to that of Co. The absolute value of the Seebeck coefficient for LaCo13is high as a metallic conductor and approaches -30μVK−1at 500K, which leads LaCo13to large power factor of 1.8 × 10−3Wm−1K−2. We obtained lattice components of the thermal conductivity by subtracting electronic contributions from the total thermal conductivity. The electronic components of the thermal conductivity were estimated using Wiedemann-Frantz law assumingL(Lorentz number) is 2.45 × 10−8V2K−2. The thermal conductivities of the lattice components for AZn13(A = Sr, Ba, and La) and LaCo13with NaZn13type structure are about 10 Wm−1K−1, respectively. These values are high as compared with other thermoelectric materials.


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