Enhanced deposition rate of sputtered amorphous silicon with a helium and argon gas mixture

1997 ◽  
Vol 76 (2) ◽  
pp. 117-123 ◽  
Author(s):  
M.S. Aida ◽  
N. Attaf ◽  
A. Benzegouta ◽  
L. Hadjeris ◽  
M. Selmi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Gas Mixture ◽  
Argon Gas

Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas Mixture

1980 ◽  
Vol 19 (5) ◽  
pp. L265-L268 ◽  
Author(s):  
Toshikazu Shimada ◽  
Yoshifumi Katayama ◽  
Shinkichi Horigome
Keyword(s):  
Amorphous Silicon ◽  
Infrared Spectra ◽  
Gas Mixture ◽  
Argon Gas

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

1998 ◽  
Vol 533 ◽  
Author(s):  
A. Morrya ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota ◽  
I. Kawashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Partial Pressure ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Deposition Rate ◽  
Epitaxial Films ◽  
Similar Degree ◽  
Gas Mixture ◽  
Heavy Doping

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.

Theoretical Modeling of Chemical Vapor Deposition of Silicon Carbide in a Hot Wall Reactor

1993 ◽  
Vol 335 ◽  
Author(s):  
Feng Gao ◽  
Ray Y. Lin
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Model Analysis ◽  
Gas Mixture ◽  
Kinetic Rate ◽  
Rate Expression ◽  
Cylindrical Coordinate

AbstractA theoretical model, which describes the coupled hydrodynamics, mass transport and chemical reaction, has been developed to simulate chemical vapor deposition (CVD) of silicon carbide (SiC) from gas mixture of methyltrichlorosilane (MTS), hydrogen and argon in a hot wall reactor. In the model analysis, the governing equations were developed in the cylindrical coordinate, and solved numerically by using a finite difference method. A kinetic rate expression of CVD-SiC deposition from the gas mixture was obtained from this study. The deposition rate has an Arrhenius-type dependence on the deposition temperature and is first order with respect to the MTS concentration. Estimated activation energy is 254 kJ/mol. Predicted deposition rate profiles by the model analysis incorporated with the obtained kinetic rate expression showed excellent agreement with experimental data over a variety of applied deposition conditions.

Single Wafer Amorphous Silicon Process Evaluation

1997 ◽  
Vol 467 ◽  
Author(s):  
David O'Meara ◽  
Chow Ling Chang ◽  
Roc Blumenthal ◽  
Rama I. Hegde ◽  
Lata Prabhu ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Cross Sections ◽  
Growth Conditions ◽  
Degree Of Crystallinity ◽  
Deposition Parameters ◽  
Before And After ◽  
Production Requirement

ABSTRACTSingle wafer amorphous silicon deposition was characterized through process modeling and film characterization for application in semiconductor production. DOE methodology was used to determine the main deposition parameters, and the responses were limited to device production requirement properties of surface roughness, deposition rate and degree of crystallinity of the as-deposited film. The data trends and models show that deposition temperature and silane flow are the main factors. Increasing either or both factor increases the deposition rate and the surface roughness. The surface morphology, evaluated by AFM, SEM and TEM, was found to be rougher at extreme growth conditions than the poly crystalline film formed after anneal. The as-deposited surface morphology was not a result of pre-anneal crystal formations as determined by TEM cross sections of samples before and after anneal. Lack of crystalinity is important for impurity diffusion considerations. Device application of the single wafer a-Si process will be a compromise between growth rate (and associated throughput) and surface roughness that can be tolerated.

The Effect of Plasma Power on the Properties of Amorphous Silicon-Germanium Thin Films

2011 ◽  
Vol 317-319 ◽  
pp. 341-344
Author(s):  
Long Gu ◽  
Hui Dong Yang ◽  
Bo Huang
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Silicon Germanium ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Plasma Power ◽  
Glass Substrates ◽  
Frequency Plasma ◽  
Amorphous Silicon Germanium

Amorphous Silicon-germanium films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on glass substrates. The structural characteristics, deposition rate, photosensitivity, and optical band gap of the silicon-germanium thin films were investigated with plasma power varying from 15W to 45W. The deposition rate increased within a certain range of plasma power. With the plasma power increasing, the photosensitivity of the thin films decreased. It is evident that varying the plasma power changes the deposition rate, photosensitivity, which was fundamentally crucial for the fabrication of a-Si/a-SiGe/a-SiGe stacked solar cells. For our deposition system, the most optimization value was 30-35W.

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