Effect of electrode type in the resistive switching behaviour of TiO2thin films

2012 ◽  
Vol 46 (4) ◽  
pp. 045103 ◽  
Author(s):  
E Hernández-Rodríguez ◽  
A Márquez-Herrera ◽  
E Zaleta-Alejandre ◽  
M Meléndez-Lira ◽  
W de la Cruz ◽  
...  
Nanoscale ◽  
2018 ◽  
Vol 10 (42) ◽  
pp. 19711-19719 ◽  
Author(s):  
Fahmida Rahman ◽  
Taimur Ahmed ◽  
Sumeet Walia ◽  
Edwin Mayes ◽  
Sharath Sriram ◽  
...  

Reversible resistive switching behaviour is observed in MoOx memory devices, at relatively low set/reset voltages, with switching ratios exceeding 103.


MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.


2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.


2013 ◽  
Vol 7 (4) ◽  
pp. 282-284 ◽  
Author(s):  
G. S. Tang ◽  
F. Zeng ◽  
C. Chen ◽  
S. Gao ◽  
H. D. Fu ◽  
...  

2017 ◽  
Vol 47 (2) ◽  
pp. 1620-1629 ◽  
Author(s):  
Srinu Rowtu ◽  
L. D. Varma Sangani ◽  
M. Ghanashyam Krishna

2017 ◽  
Vol 5 (8) ◽  
pp. 2153-2159 ◽  
Author(s):  
Fran Kurnia ◽  
Chunli Liu ◽  
Guangqing Liu ◽  
Rama K. Vasudevan ◽  
Sang Mo Yang ◽  
...  

Resistive switching behaviour is observed for GaP thin films. Conductive AFM and FORC-IV measurements show that the current is localised at grain boundaries. The switching mechanism is driven by Ga migration along the grain boundaries.


2017 ◽  
Vol 46 (3) ◽  
pp. 218-225
Author(s):  
Benfu Wang ◽  
Decai Ren ◽  
Qian Zhang ◽  
Xuduo Bai ◽  
Xiankai Jiang

Purpose This paper aims to investigate the electrochromic (EC) properties of poly(triphenylamine alkyl ether) and poly(triphenylamine aryl ether) in two different electrolyte solution to study the resistive switching behaviour of acid-doped poly(triphenylamine alkyl ether). Design/methodology_appach By Buchwald–Hartwig coupling reaction, two novel poly[N-p-phenoxy-N-[4-[2-(2-methoxyethoxy)ethoxy]ethoxy]triphenylamineandpoly[N,N-bis(4-phenoxy)]triphenylamine were synthesized from 4-phenoxyaniline and two dibromo aromatic compounds, 1,2-bis[β,β′-(p-bromophenoxy)ethoxy]ethane and bis(4-bromophenyl) ether. Findings Poly(triphenylamine alkyl ether) displayed excellent EC characteristics, with a coloration change from a colourless neutral state to light blue and red oxidized states, while poly(triphenylamine aryl ether) showed coloration a change from a colourless neutral state to light blue oxidized state in tetrabutylammonium perchlorate electrolyte solution. Moreover, p-toluenesulfonic acid-doped poly(triphenylamine alkyl ether) exhibited a non-volatile bistable resistive switching behaviour with a high high-conductivity/low-conductivity ratio of up to 104, long retention time exceeding 2.5 × 103 s and the switching threshold voltage was also lower than −2V. Research limitations/implications In this paper, the non-volatile bistable resistive switching behaviour of acid-dopedpoly(triphenylamine alkyl ether) was in accordance with the molar ratio of 1:1. The effects of different molar ratios remained to be studied. Practical implications Poly(triphenylamine ether)s may find optoelectronic applications as new EC and resistive switching materials. Originality/value The effects of alkyl and aryl ether structures in the main chain on the EC and resistive switching behaviour of triphenylamine unit have not yet been reported.


2017 ◽  
Vol 2 (1) ◽  
pp. 52-57 ◽  
Author(s):  
Lin Guan ◽  
Yiping Guo ◽  
Fen Wu ◽  
Huanan Duan ◽  
Hua Li ◽  
...  

2020 ◽  
Vol 1637 ◽  
pp. 012021
Author(s):  
Wei Tian ◽  
Nasir Ilyas ◽  
Dongyang Li ◽  
Chunmei Li ◽  
Xiangdong Jiang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document