High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction

2016 ◽  
Vol 49 (15) ◽  
pp. 155106 ◽  
Author(s):  
Jumpei Kamimura ◽  
Manfred Ramsteiner ◽  
Uwe Jahn ◽  
Cheng-Ying James Lu ◽  
Akihiko Kikuchi ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Electron Backscatter Diffraction ◽  
High Quality ◽  
Electron Backscatter ◽  
Backscatter Diffraction

Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2947-2952
Author(s):  
L. Chen ◽  
Z.-H. Lu ◽  
T.-M. Lu ◽  
I. Bhat ◽  
S.B. Zhang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Efficiency ◽  
Electron Backscatter Diffraction ◽  
Low Cost ◽  
High Quality ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Image Position ◽  
Backscatter Diffraction

ABSTRACTEpitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[$\bar 1$10]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (∼50 μm) with small angle grain boundaries (< 8o). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.

Preparation of Samples with Both Hard and Soft Phases for Electron Backscatter Diffraction: Examples from Gold Mineralization

2013 ◽  
Vol 19 (4) ◽  
pp. 1007-1018 ◽  
Author(s):  
Angela Halfpenny ◽  
Robert M. Hough ◽  
Michael Verrall
Keyword(s):  
Chemical Mechanical Polishing ◽  
Gold Mineralization ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Mineral Surfaces ◽  
High Quality ◽  
Essential Step ◽  
Mineral Phases ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractPreparation of high-quality polished sample surfaces is an essential step in the collection of microanalytical data on the microstructures of minerals and alloys. Poorly prepared samples can yield insufficient or inconsistent results and, in the case of gold, potentially no data due to the “beilby” layer. Currently, preparation of ore samples is difficult as they commonly contain both hard and soft mineral phases. The aim of our research is to produce suitably polished sample surfaces, on all phases, for electron backscatter diffraction analysis. A combination of chemical–mechanical polishing (CMP) and broad ion-beam polishing (BIBP) was used to tackle the problem. Our results show that it is critical to perform CMP first, as it produces a suitable polish on the hard mineral phases but tends to introduce more damage to the soft mineral surfaces. BIBP is essential to produce a high-quality polish to the soft phases (gold). This is a highly efficient method of sample preparation and is important as it allows the complete quantification of ore textures and all constituent mineral phases, including soft alloys.

EBSD Sample Preparation: High Energy Ar Ion Milling

2015 ◽  
Vol 812 ◽  
pp. 309-314 ◽  
Author(s):  
Zoltán Dankházi ◽  
Szilvia Kalácska ◽  
Adrienn Baris ◽  
Gábor Varga ◽  
Zsolt Radi ◽  
...  
Keyword(s):  
Surface Quality ◽  
Electron Backscatter Diffraction ◽  
High Energy ◽  
Quality Development ◽  
Ion Milling ◽  
High Quality ◽  
Electron Backscatter ◽  
Backscatter Diffraction ◽  
Quality Surface

Surface quality development on series of metal samples was investigated using a new Ar ion milling apparatus. The surface quality of samples was characterized by the image quality (IQ) parameter of the electron backscatter diffraction (EBSD) measurement. Ar ion polishing recipes have provided to prepare a surface appropriate for high quality EBSD mapping. The initial surfaces of samples were roughly grinded and polished. High quality surface smoothness could be achieved during the subsequent Ar ion polishing treatment. The optimal angles of Ar ion incidence and the polishing times were determined for several materials.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

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