Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence
2011 ◽
Vol 26
(8)
◽
pp. 085003
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1997 ◽
Vol 15
(2)
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pp. 232
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2005 ◽
Vol 252
(4)
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pp. 1153-1158
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2009 ◽
Vol 615-617
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pp. 663-666
2014 ◽
Vol 2014
(HITEC)
◽
pp. 000058-000060
2020 ◽
Vol 31
(11)
◽
pp. 8349-8358
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