Linear bounded potential model for semiconductor band bending

Abstract We propose a simple but unexplored model for the semiconductor band bending with the aim to obtain a relatively simple expression to calculate the energy spectrum for the conﬁned levels and the analytical expressions for wave-functions. This model consists of a linear potential but it is bounded or trimmed in energy unlike the well known wedge potential model. We present exact solutions for this potential in the frame of the eﬀective mass approximation and they are valid for electron or hole conﬁnement potential. This model provides a more adequate physical scenario than the wedge potential since it takes into account the charge balance involved in the band bending potential. These results allow to treat conﬁned potential problems as in the case of a two-dimensional electron gas (2DEG) in a simpliﬁed way. We discuss the application of this approximation to the recombination time of electrons an holes and for the Franz-Keldysh eﬀect.

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Variable Angle of Incidence Spectroscopic Ellipsometric Measurement of the Franz-Keloysh Effect in Modfet Structures

MRS Proceedings ◽

10.1557/proc-77-761 ◽

1986 ◽

Vol 77 ◽

Cited By ~ 5

Author(s):

P. G. Snyder ◽

J. E. Oh ◽

J. A. Woollam

Keyword(s):

Electric Field ◽

Bandgap Energy ◽

Model Parameters ◽

Angle Of Incidence ◽

Internal Electric Field ◽

Ellipsometric Measurement ◽

Band Bending ◽

Variable Angle ◽

Two Samples ◽

Franz Keldysh Effect

ABSTRACTIt has been shown recently that variable angle of incidence spectroscopie ellipsometry (VASE) is a sensitive technique for determining semiconductor multilayer model parameters, e.g. layer thicknesses and ternary compositions. In this paper we show that VASE is, in addition, sensitive to the Franz-Keldysh effect induced by band bending in the barrier layer of a GaAs-AlGaAs-GaAs (MODFET) structure. VASE measurements differ from electro-reflectance and photoreflectance, in that the internal heterojunction region electric field is directly probed, without the application of a modulating field. The Franz-Keldysh effect appears in the VASE spectra near the AlGaAs bandgap energy. Data for two samples, with different doping profiles, are quantitatively modeled to determine the internal electric field amplitudes.

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Molecular-Theory of High Frequency Dielectric Susceptibility of Nematic Nanocomposites

Crystals ◽

10.3390/cryst10110970 ◽

2020 ◽

Vol 10 (11) ◽

pp. 970

Author(s):

Mikhail A. Osipov ◽

Alexey S. Merekalov ◽

Alexander A. Ezhov

Keyword(s):

Plasmon Resonance ◽

High Frequency ◽

Volume Fraction ◽

Simple Expression ◽

Dielectric Anisotropy ◽

Dielectric Susceptibility ◽

Nanoparticle Volume Fraction ◽

Effective Polarizability ◽

Dielectric And Optical Properties ◽

Analytical Expressions

A molecular-statistical theory of the high frequency dielectric susceptibility of the nematic nanocomposites has been developed and approximate analytical expressions for the susceptibility have been obtained in terms of the effective polarizability of a nanoparticle in the nematic host, volume fraction of the nanoparticles and the susceptibility of the pure nematic phase. A simple expression for the split of the plasmon resonance of the nanoparticles in the nematic host has been obtained and it has been shown that in the resonance frequency range the high frequency dielectric anisotropy of the nanocomposite may be significantly larger than that of the pure nematic host. As a result, all dielectric and optical properties of the nanocomposite related to the anisotropy are significantly enhanced which may be important for emerging applications. The components of the dielectric susceptibility have been calculated numerically for particular nematic nanocomposites with gold and silver nanoparicles as functions of the nanoparticle volume fraction and frequency. The splitting of the plasmon resonance has been observed together with the significant dependence on the nanoparticle volume fraction and the parameters of the nematic host phase.

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Proton charge form factors for a linear-potential model with gluon exchange

Physical Review D ◽

10.1103/physrevd.17.874 ◽

1978 ◽

Vol 17 (3) ◽

pp. 874-878 ◽

Cited By ~ 3

Author(s):

C. Y. Hu ◽

S. A. Moszkowski ◽

D. L. Shannon

Keyword(s):

Potential Model ◽

Form Factors ◽

Linear Potential ◽

Charge Form ◽

Gluon Exchange ◽

Proton Charge

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DESCRIBING RECENTLY DISCOVERED NARROW STATES AS QUARKONIA USING A POTENTIAL MODEL

International Journal of Modern Physics A ◽

10.1142/s0217751x05027588 ◽

2005 ◽

Vol 20 (16) ◽

pp. 3774-3776 ◽

Cited By ~ 2

Author(s):

STANLEY F. RADFORD ◽

WAYNE W. REPKO

Keyword(s):

Long Range ◽

Short Distance ◽

Bound States ◽

Potential Model ◽

Linear Potential

We examine to what extent several recently discovered narrow resonances can be interpreted as conventional [Formula: see text] bound states describable using a potential model. In doing so, we use a semirelativistic approach, which includes both the v2/c2 and QCD one-loop corrections to the short distance potential and a long range linear potential together with its scalar and vector v2/c2 spin-dependent terms.

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Analytical expressions for the energies of anharmonic oscillators

Canadian Journal of Physics ◽

10.1139/p00-066 ◽

2000 ◽

Vol 78 (9) ◽

pp. 845-850

Author(s):

F M Fernández ◽

R H Tipping

Keyword(s):

Perturbation Parameter ◽

Bound State ◽

Perturbation Series ◽

Simple Expression ◽

Branch Points ◽

Anharmonic Oscillators ◽

Large Coupling ◽

Analytical Behavior ◽

Schrödinger Perturbation ◽

Analytical Expressions

We propose a systematic construction of algebraic approximants for the bound-state energies of anharmonic oscillators. The approximants are based on the Rayleigh-Schrödinger perturbation series and take into account the analytical behavior of the energies at large values of the perturbation parameter. A simple expression obtained from a low-order perturbation series compares favorably with alternative approximants. Present approximants converge in the large-coupling limit and are suitable for the calculation of the energy of highly excited states. Moreover, we obtain some branch points of the eigenvalues of the anharmonic oscillator as functions of the coupling constant. PACS No.: 03.65Ge

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