Magnetic field imaging with nitrogen-vacancy ensembles

Abstract We present a new method for backside integrated circuit (IC) magnetic field imaging using Quantum Diamond Microscope (QDM) nitrogen vacancy magnetometry. We demonstrate the ability to simultaneously image the functional activity of an IC thinned to 12 µm remaining silicon thickness over a wide fieldof- view (3.7 x 3.7 mm2). This 2D magnetic field mapping enables the localization of functional hot-spots on the die and affords the potential to correlate spatially delocalized transient activity during IC operation that is not possible with scanning magnetic point probes. We use Finite Element Analysis (FEA) modeling to determine the impact and magnitude of measurement artifacts that result from the specific chip package type. These computational results enable optimization of the measurements used to take empirical data yielding magnetic field images that are free of package-specific artifacts. We use machine learning to scalably classify the activity of the chip using the QDM images and demonstrate this method for a large data set containing images that are not possible to visually classify.

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High-resolution magnetic field imaging with a nitrogen-vacancy diamond sensor integrated with a photonic-crystal fiber

Optics Letters ◽

10.1364/ol.41.000472 ◽

2016 ◽

Vol 41 (3) ◽

pp. 472 ◽

Cited By ~ 15

Author(s):

I. V. Fedotov ◽

S. M. Blakley ◽

E. E. Serebryannikov ◽

P. Hemmer ◽

M. O. Scully ◽

...

Keyword(s):

Magnetic Field ◽

Photonic Crystal ◽

High Resolution ◽

Photonic Crystal Fiber ◽

Nitrogen Vacancy ◽

Crystal Fiber ◽

Magnetic Field Imaging ◽

Field Imaging

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Magnetic Field Imaging on Stacked Flash Memories by Laser Probing and SQUID Scanning

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0495 ◽

2017 ◽

Author(s):

K. Sanchez ◽

G. Bascoul ◽

F. Infante ◽

N. Courjault ◽

T. Nakamura

Keyword(s):

Magnetic Field ◽

Failure Analysis ◽

Two Dimensions ◽

Analysis Tool ◽

Active Device ◽

Current Path ◽

3D Packaging ◽

Magnetic Field Imaging ◽

The Magnetic Field ◽

Field Imaging

Abstract Magnetic field imaging is a well-known technique which gives the possibility to study the internal activity of electronic components in a contactless and non-invasive way. Additional data processing can convert the magnetic field image into a current path and give the possibility to identify current flow anomalies in electronic devices. This technique can be applied at board level or device level and is particularly suitable for the failure analysis of complex packages (stacked device & 3D packaging). This approach can be combined with thermal imaging, X-ray observation and other failure analysis tool. This paper will present two different techniques which give the possibility to measure the magnetic field in two dimensions over an active device. Same device and same level of current is used for the two techniques to give the possibility to compare the performance.

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3D IC/Stacked Device Fault Isolation Using 3D Magnetic Field Imaging

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0033 ◽

2014 ◽

Author(s):

A. Orozco ◽

N.E. Gagliolo ◽

C. Rowlett ◽

E. Wong ◽

A. Moghe ◽

...

Keyword(s):

Magnetic Field ◽

Fault Isolation ◽

Wafer Level ◽

Wafer Level Packaging ◽

Current Location ◽

Geometrical Information ◽

Magnetic Field Imaging ◽

Silicon Vias ◽

Non Destructive ◽

Field Imaging

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.

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