Backside Integrated Circuit Magnetic Field Imaging with a Quantum Diamond Microscope

Author(s):  
Edlyn V. Levine ◽  
Matthew J. Turner ◽  
Nicholas Langellier ◽  
Thomas M. Babinec ◽  
Marko Lončar ◽  
...  

Abstract We present a new method for backside integrated circuit (IC) magnetic field imaging using Quantum Diamond Microscope (QDM) nitrogen vacancy magnetometry. We demonstrate the ability to simultaneously image the functional activity of an IC thinned to 12 µm remaining silicon thickness over a wide fieldof- view (3.7 x 3.7 mm2). This 2D magnetic field mapping enables the localization of functional hot-spots on the die and affords the potential to correlate spatially delocalized transient activity during IC operation that is not possible with scanning magnetic point probes. We use Finite Element Analysis (FEA) modeling to determine the impact and magnitude of measurement artifacts that result from the specific chip package type. These computational results enable optimization of the measurements used to take empirical data yielding magnetic field images that are free of package-specific artifacts. We use machine learning to scalably classify the activity of the chip using the QDM images and demonstrate this method for a large data set containing images that are not possible to visually classify.

2018 ◽  
Author(s):  
Antonio Orozco ◽  
Elena Talanova ◽  
Alex Jeffers ◽  
Florencia Rusli ◽  
Bernice Zee ◽  
...  

Abstract Industry and market requirements keep imposing demands in terms of tighter transistor packing, die and component real estate management on the package, faster connections and expanding functionality. This has forced the semiconductor industry to look for novel packaging approaches to allow for 3D stacking of transistors (the so called “More than Moore”). This complex 3D geometry, with an abundance of opaque layers and interconnects, presents a great challenge for failure analysis (FA). Three-dimensional (3D) magnetic field imaging (MFI) has proven to be a natural, useful technique for non-destructively mapping 3D current paths in devices that allows for submicron vertical resolution. 3D X-ray microscopy (XRM) enables 3D tomographic imaging of advanced IC packages without the need to destroy the device. This is because it employs both geometric and optical image magnifications to achieve high spatial resolution. In this paper, we propose a fully nondestructive, 3D-capable workflow for FA comprising 3D MFI and 3D XRM. We present an application of this novel workflow to 3D defect localization in a complex 2.5D device combining high bandwidth memory (HBM) devices and an application specific integrated circuit (ASIC) unit on a Si interposer with a signal pin electrical short failure.


Author(s):  
L. A. Knauss ◽  
B. M. Frazier ◽  
A. B. Cawthorne ◽  
E. Budiarto ◽  
R. Crandall ◽  
...  

Abstract With the arrival of flip-chip packaging, present tools and techniques are having increasing difficulty meeting failure-analysis needs. Recently a magneticfield imaging system has been used to localize shorts in buried layers of both packages and dies. Until now, these shorts have been powered directly through simple connections at the package. Power shorts are examples of direct shorts that can be powered through connections to Vdd and Vss at the package level. While power shorts are common types of failure, equally important are defects such as logic shorts, which cannot be powered through simple package connections. These defects must be indirectly activated by driving the part through a set of vectors. This makes the magnetic-field imaging process more complicated due to the large background currents present along with the defect current. Magnetic-field imaging is made possible through the use of a SQUID (Superconducting Quantum Interference Device), which is a very sensitive magnetic sensor that can image magnetic fields generated by magnetic materials or currents (such as those in an integrated circuit). The current-density distribution in the sample can then be calculated from the magnetic-field image revealing the locations of shorts and other current anomalies. Presented here is the application of a SQUID-based magnetic-field imaging system for isolation of indirect shorts. This system has been used to investigate shorts in two flip-chip-packaged SRAMs. Defect currents as small as 38 μA were imaged in a background of 1 A. The measurements were made using a lock-in thechnique and image subtraction. The magnetic-field image from one sample is compared with the results from a corresponding infrared-microscope image.


2011 ◽  
Vol 13 (4) ◽  
pp. 045021 ◽  
Author(s):  
L M Pham ◽  
D Le Sage ◽  
P L Stanwix ◽  
T K Yeung ◽  
D Glenn ◽  
...  

2016 ◽  
Vol 41 (3) ◽  
pp. 472 ◽  
Author(s):  
I. V. Fedotov ◽  
S. M. Blakley ◽  
E. E. Serebryannikov ◽  
P. Hemmer ◽  
M. O. Scully ◽  
...  

Author(s):  
K. Sanchez ◽  
G. Bascoul ◽  
F. Infante ◽  
N. Courjault ◽  
T. Nakamura

Abstract Magnetic field imaging is a well-known technique which gives the possibility to study the internal activity of electronic components in a contactless and non-invasive way. Additional data processing can convert the magnetic field image into a current path and give the possibility to identify current flow anomalies in electronic devices. This technique can be applied at board level or device level and is particularly suitable for the failure analysis of complex packages (stacked device & 3D packaging). This approach can be combined with thermal imaging, X-ray observation and other failure analysis tool. This paper will present two different techniques which give the possibility to measure the magnetic field in two dimensions over an active device. Same device and same level of current is used for the two techniques to give the possibility to compare the performance.


Author(s):  
A. Orozco ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
A. Moghe ◽  
...  

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.


2021 ◽  
Vol 92 (3) ◽  
pp. 035113
Author(s):  
Huan Liu ◽  
Changfeng Zhao ◽  
Xiaobin Wang ◽  
Zehua Wang ◽  
Jian Ge ◽  
...  

2012 ◽  
Vol 30 (3) ◽  
pp. 515-526 ◽  
Author(s):  
M. Palmroth ◽  
R. C. Fear ◽  
I. Honkonen

Abstract. We examine the spatial variation of magnetospheric energy transfer using a global magnetohydrodynamic (MHD) simulation (GUMICS-4) and a large data set of flux transfer events (FTEs) observed by the Cluster spacecraft. Our main purpose is to investigate whether it is possible to validate previous results on the spatial energy transfer variation from the GUMICS-4 simulation using the statistical occurrence of FTEs, which are manifestations of magnetospheric energy transfer. Previous simulation results have suggested that the energy transfer pattern at the magnetopause rotates according to the interplanetary magnetic field (IMF) orientation, and here we investigate whether a similar rotation is seen in the locations at which FTE signatures are observed. We find that there is qualitative agreement between the simulation and observed statistics, as the peaks in both distributions rotate as a function of the IMF clock angle. However, it is necessary to take into account the modulation of the statistical distribution that is caused by a bias towards in situ FTE signatures being observed in the winter hemisphere (an effect that has previously been predicted and observed in this data set). Taking this seasonal effect into account, the FTE locations support the previous simulation results and confirm the earlier prediction that the energy transfers in the plane of the IMF. In addition, we investigate the effect of the dipole orientation (both the dipole tilt angle and its orientation in the plane perpendicular to the solar wind flow) on the energy transfer spatial distribution. We find that the energy transfer occurs mainly in the summer hemisphere, and that the dayside reconnection region is located asymmetrically about the subsolar position. Finally, we find that the energy transfer is 10% larger at equinox conditions than at solstice, contributing to the discussion concerning the semiannual variation of magnetospheric dynamics (known as "the Russell-McPherron effect").


2017 ◽  
Vol 862 ◽  
pp. 012008 ◽  
Author(s):  
K Hiroi ◽  
T Shinohara ◽  
H Hayashida ◽  
J D Parker ◽  
K Oikawa ◽  
...  

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