Removing of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch

2021 ◽  
Author(s):  
Jiale Tang ◽  
Chao Liu
Keyword(s):  
Atomic Layer ◽  
Inductively Coupled ◽  
Gan Film

Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks

2021 ◽  
Author(s):  
Shiying Zhang ◽  
Lei Zhang ◽  
Yueyao Zhong ◽  
Guodong Wang ◽  
Qingjun Xu
Keyword(s):  
Inductively Coupled Plasma ◽  
Average Diameter ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Self Organized ◽  
Gan Film ◽  
Koh Etching

High crystal quality GaN nanorod arrays were fabricated by inductively coupled plasma (ICP) etching using self-organized nickel (Ni) nano-islands mask on GaN film and subsequent repaired process including annealing in ammonia and KOH etching. The Ni nano-islands have been formed by rapid thermal annealing, whose density, shape, and dimensions were regulated by annealing temperature and Ni layer thickness. The structural and optical properties of the nanorods obtained from GaN epitaxial layers were comparatively studied by high-resolution X-ray diffraction (HRXRD), Raman spectroscopy and photoluminescence (PL). The results indicate that damage induced by plasma can be successfully healed by annealing in NH3 at 900 °C. The average diameter of the as-etched nanorod was effectively reduced and the plasma etch damage was removed after a wet treatment process in a KOH solution. It was found that the diameter of the GaN nanorod was continuously reduced and the PL intensity first increased, then reduced and finally increased as the KOH etching time sequentially increased.

scholarly journals Discharge physics and atomic layer etching in Ar/C4F6 inductively coupled plasmas with a radio frequency bias

2021 ◽  
Vol 28 (6) ◽  
pp. 063504
Author(s):  
Min Young Yoon ◽  
H. J. Yeom ◽  
Jung Hyung Kim ◽  
Won Chegal ◽  
Yong Jai Cho ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Atomic Layer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas ◽  
Atomic Layer Etching

scholarly journals Determination of the vapour pressure curves and vaporization enthalpies of hafnium alkoxides using thermogravimetric analysis

2019 ◽  
Vol 6 (1) ◽  
pp. 181193 ◽  
Author(s):  
Changhong Wang ◽  
Shenghai Yang ◽  
Yongming Chen
Keyword(s):  
Thermogravimetric Analysis ◽  
Vapour Pressure ◽  
Hafnium Oxide ◽  
Inductively Coupled Plasma ◽  
Atomic Layer ◽  
Nitrogen Atmosphere ◽  
Pressure Curve ◽  
Organic Precursor ◽  
Inductively Coupled ◽  
Vapour Pressure Curve

In order to identify a volatile metallo-organic precursor for the deposition of hafnium oxide (HfO 2 ) films for atomic layer deposition (ALD) applications, the evaporative properties of hafnium alkoxides (hafnium isopropoxide, hafnium n -propoxide and hafnium n -butoxide) were investigated using thermogravimetric analysis. These hafnium alkoxide samples were synthesized by the electrochemical method and characterized by Fourier transform infrared spectroscopy, nuclear magnetic resonance and inductively coupled plasma analysis techniques. The characterization results indicated that the products were 99.997% high-purity hafnium alkoxides and could meet the requirement of purity considering the usage of making HfO 2 gate oxide by ALD. Synthesized samples were subjected to a simultaneous thermogravimetric–differential thermal analysis unit at 10 K min −1 in a dry nitrogen atmosphere flowing at 100 ml min −1 . Benzoic acid was used to calculate a calibration constant, which could then be inserted into a modified Langmuir equation to calculate vapour pressure curves for hafnium isopropoxide and hafnium n -propoxide. Detailed vapour pressure data for the HfO 2 precursor hafnium alkoxides were determined. The vapour pressure curve of hafnium isopropoxide was constructed within the first stage, and calculated to be ln p = 31.157 (±0.200)−13130.57 (±56.50)/T. Hafnium n -propoxide and hafnium n -butoxide were simultaneously undergoing evaporation and decomposition, thus making calculations invalid.

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