scholarly journals Влияние технологии двойного травления под затвор на параметры HEMT транзисторов на подложках GaAs и InP

2021 ◽  
Vol 55 (10) ◽  
pp. 890
Author(s):  
В.А. Беляков ◽  
И.В. Макарцев ◽  
А.Г. Фефелов ◽  
С.В. Оболенский ◽  
А.П. Васильев ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Inp Substrate ◽  
Current Voltage ◽  
Unity Gain

High electron mobility transistors (HEMTs) have been developed based on InAlAs/InGaAs heterostructures on an InP substrate, with a transconductance of about 1000 mS/mm, a reverse breakdown voltage of more than 10 V and a unity-gain cutoff frequency is 140 GHz. In addition, HEMT transistors based on AlGaAs/InGaAs/GaAs heterostructures on a GaAs substrate with double gate recessing technology have been developed. This transistors demonstrate a maximum measured transconductance of the current-voltage characteristic of 520 mS/mm, a maximum drain current of 670 mA/mm, and a gate-drain breakdown voltage of 14 V and a unity-gain cut-off frequency is 120 GHz. Due to the increased breakdown voltage, the developed transistors have been used in monolithic integrated circuits of millimeter-wave power amplifiers with an output power of more than 110 mW.

AlGaN Channel HEMT with Extremely High Breakdown Voltage

2011 ◽  
Vol 1324 ◽  
Author(s):  
Takuma Nanjo ◽  
Misaichi Takeuchi ◽  
Akifumi Imai ◽  
Yousuke Suzuki ◽  
Muneyoshi Suita ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Doping Technique ◽  
Resistive Source

ABSTRACTA channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs

2008 ◽  
Vol 600-603 ◽  
pp. 1345-1348 ◽  
Author(s):  
Akira Nakajima ◽  
Shuichi Yagi ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
Breakdown Voltage ◽  
Device Simulation ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Deep Trap ◽  
High Electron ◽  
Surface Trap ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Good Agreement

The effect of AlGaN surface traps on breakdown voltage VB and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs) were investigated using experimental measurement and numerical simulation. The drain current transient due to surface traps was systematically measured and analyzed, and the activation energy of a surface trap was evaluated as approximately 0.7 eV. Results from the device simulation of VB in HEMTs were in good agreement with the experimental results when assuming surface traps. The results indicate that surface traps increase VB, and induce a crucial current collapse.

scholarly journals High-Performance InGaAs HEMTs on Si Substrates for RF Applications

Electronics ◽  
2022 ◽  
Vol 11 (2) ◽  
pp. 259
Author(s):  
Bo Wang ◽  
Yanfu Wang ◽  
Ruize Feng ◽  
Haomiao Wei ◽  
Shurui Cao ◽  
...  
Keyword(s):  
High Performance ◽  
Cutoff Frequency ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Current Gain ◽  
Gate Length ◽  
High Electron ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Inp Substrates

In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique was employed to bond the InP substrates to Si substrates, thereby forming high-quality InGaAs channel on Si. The 120 nm gate length device shows a maximum drain current (ID,max) of 569 mA/mm, and the maximum extrinsic transconductance (gm,max) of 1112 mS/mm. The current gain cutoff frequency (fT) is as high as 273 GHz and the maximum oscillation frequency (fMAX) reaches 290 GHz. To the best of our knowledge, the gm,max and the fT of our device are the highest ever reported in InGaAs channel HEMTs on Si substrates at given gate length above 100 nm.

Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

2014 ◽  
Vol 7 (9) ◽  
pp. 096501 ◽  
Author(s):  
Kengo Kobayashi ◽  
Shinya Hatakeyama ◽  
Tomohiro Yoshida ◽  
Yuhei Yabe ◽  
Daniel Piedra ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 842 ◽  
Author(s):  
Myoung-Jin Kang ◽  
Hyun-Seop Kim ◽  
Ho-Young Cha ◽  
Kwang-Seok Seo
Keyword(s):  
Chemical Vapor ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Breakdown Field ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Passivation Process ◽  
Gan On Si ◽  
Sinx Film

We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiNx film exhibited a high film density of 2.7 g/cm3 with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiNx passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiNx film had positive charges, which were responsible for suppressing the current collapse phenomenon.

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