Anisotropic 2D materials for post-Moore photoelectric devices

2022 ◽  
Vol 43 (1) ◽  
pp. 010201
Author(s):  
Dingdong Xie ◽  
Jie Jiang ◽  
Liming Ding
Author(s):  
Jianwei Su ◽  
Wanfu Shen ◽  
Jiazhen Chen ◽  
Sijie Yang ◽  
Jia Liu ◽  
...  

Low-symmetry 2D materials are reviving recently owing to their azimuth-angle dependent physical properties, which can be applied in polarization-sensitive optical and photoelectric devices. In this work, layered V2P4S13 with novel...


2020 ◽  
Vol 7 (9) ◽  
pp. 2185-2207 ◽  
Author(s):  
Zhaoqiang Zheng ◽  
Jiandong Yao ◽  
Jingbo Li ◽  
Guowei Yang

Growth of non-layered 2D materials and their application in photoelectric devices are summarized, accompanied by prospects for future development.


2019 ◽  
Vol 21 (39) ◽  
pp. 21898-21907 ◽  
Author(s):  
Jianhui Chen ◽  
Xiaolin Tan ◽  
Peng Lin ◽  
Baisheng Sa ◽  
Jian Zhou ◽  
...  

Monolayers of III–VI group two-dimensional (2D) materials have attracted global interest for potential applications in electronic and photoelectric devices due to their attractive physical and chemical characteristics.


Author(s):  
Minu Mathew ◽  
Chandra Sekhar Rout

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.


2020 ◽  
Author(s):  
Aleksandra Radenovic
Keyword(s):  

2020 ◽  
Author(s):  
Haoyang Yu ◽  
Alyxandra Thiessen ◽  
Md Asjad Hossain ◽  
Marc Julian Kloberg ◽  
Bernhard Rieger ◽  
...  

<div><div><div><p>Covalently bonded organic monolayers play important roles in defining the solution processability, ambient stability, and electronic properties of two-dimensional (2D) materials such as Ge nanosheets (GeNSs); they also hold promise of providing avenues for the fabrication of future generation electronic and optical devices. Functionalization of GeNS normally involves surface moieties linked through covalent Ge−C bonds. In the present contribution we extend the scope of surface linkages to include Si−Ge bonding and present the first demonstration of heteronuclear dehydrocoupling of organosilanes to hydride-terminated GeNSs obtained from the deintercalation and exfoliation of CaGe2. We further exploit this new surface reactivity and demonstrated the preparation of directly bonded silicon quantum dot-Ge nanosheet hybrids.</p></div></div></div>


2017 ◽  
Author(s):  
Varun Bheemireddy

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>


2018 ◽  
Author(s):  
Sherif Tawfik ◽  
Olexandr Isayev ◽  
Catherine Stampfl ◽  
Joseph Shapter ◽  
David Winkler ◽  
...  

Materials constructed from different van der Waals two-dimensional (2D) heterostructures offer a wide range of benefits, but these systems have been little studied because of their experimental and computational complextiy, and because of the very large number of possible combinations of 2D building blocks. The simulation of the interface between two different 2D materials is computationally challenging due to the lattice mismatch problem, which sometimes necessitates the creation of very large simulation cells for performing density-functional theory (DFT) calculations. Here we use a combination of DFT, linear regression and machine learning techniques in order to rapidly determine the interlayer distance between two different 2D heterostructures that are stacked in a bilayer heterostructure, as well as the band gap of the bilayer. Our work provides an excellent proof of concept by quickly and accurately predicting a structural property (the interlayer distance) and an electronic property (the band gap) for a large number of hybrid 2D materials. This work paves the way for rapid computational screening of the vast parameter space of van der Waals heterostructures to identify new hybrid materials with useful and interesting properties.


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